ON Semiconductor 2N7002KT1G
- Part Number:
- 2N7002KT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2478569-2N7002KT1G
- Description:
- MOSFET N-CH 60V 320MA SOT-23
- Datasheet:
- 2N7002KT1G
ON Semiconductor 2N7002KT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N7002KT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.6Ohm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max350mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation420mW
- Turn On Delay Time12.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.6 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
- Current - Continuous Drain (Id) @ 25°C320mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time55.8 ns
- Continuous Drain Current (ID)380mA
- Threshold Voltage2.3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2.3 V
- Feedback Cap-Max (Crss)5 pF
- Height1.11mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002KT1G Description
The N-channel Small Signal MOSFET 2N7002KT1G has a drain-source voltage of 60V and a steady-state drain current of 320mA. It can be used in low-side load switches, level shift circuits, DC-to-DC converters, portable DSCs, and PDAs.
2N7002KT1G Features ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant
2N7002KT1G Applications Low Side Load Switch
Level Shift Circuits
DC?DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
2N7002KT1G Features ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant
2N7002KT1G Applications Low Side Load Switch
Level Shift Circuits
DC?DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
2N7002KT1G More Descriptions
2N7002KT1G N-channel MOSFET Transistor; 0.38 A; 60 V; 3-Pin SOT-23
MOSFET N-CH 60V 320MA SOT-23 / Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R
ON Semi SMD MOSFET NFET 60V 300mA 1,6Ω 150°C SOT-23 2N7002KT1G
N-Channel 60 V 1.6 Ohm 300 mW Surface Mount Small Signal MOSFET - SOT-23-3
N-Channel Small Signal MOSFET 60V 380mA 1.6 Ω
N CHANNEL MOSFET, 60V, 380MA SOT-23; TRA; 380mA Transistor Polarity:N Channel; Continuous Drain Current Id:380mA;
MOSFETs- Power and Small Signal SMALL SIGNAL MOSFET 60V 380mA SINGL CH
Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N Channel Mosfet, 60V, 380Ma Sot-23, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:380Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:420Mw Rohs Compliant: Yes |Onsemi 2N7002KT1G.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 380 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 20 / Fall Time ns = 29 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 55.8 / Turn-ON Delay Time ns = 12.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 450
MOSFET N-CH 60V 320MA SOT-23 / Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R
ON Semi SMD MOSFET NFET 60V 300mA 1,6Ω 150°C SOT-23 2N7002KT1G
N-Channel 60 V 1.6 Ohm 300 mW Surface Mount Small Signal MOSFET - SOT-23-3
N-Channel Small Signal MOSFET 60V 380mA 1.6 Ω
N CHANNEL MOSFET, 60V, 380MA SOT-23; TRA; 380mA Transistor Polarity:N Channel; Continuous Drain Current Id:380mA;
MOSFETs- Power and Small Signal SMALL SIGNAL MOSFET 60V 380mA SINGL CH
Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
N Channel Mosfet, 60V, 380Ma Sot-23, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:380Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:420Mw Rohs Compliant: Yes |Onsemi 2N7002KT1G.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 380 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 20 / Fall Time ns = 29 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 55.8 / Turn-ON Delay Time ns = 12.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 450
The three parts on the right have similar specifications to 2N7002KT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightTerminationVoltage - Rated DCCurrent RatingDual Supply VoltageQualification StatusDrain Current-Max (Abs) (ID)Manufacturer Package IdentifierTerminal FinishAdditional FeatureView Compare
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2N7002KT1GACTIVE (Last Updated: 3 days ago)7 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR991.6OhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311350mW TaSingleENHANCEMENT MODE420mW12.2 nsN-ChannelSWITCHING1.6 Ω @ 500mA, 10V2.5V @ 250μAHalogen Free24.5pF @ 20V320mA Ta0.7nC @ 4.5V9ns4.5V 10V±20V9 ns55.8 ns380mA2.3V20V60V150°C2.3 V5 pF1.11mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------
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-20 WeeksTinSurface MountSC-70, SOT-323-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR997.5OhmFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING26040311200mW TaSingleENHANCEMENT MODE200mW7 nsN-ChannelSWITCHING7.5 Ω @ 50mA, 5V2V @ 250μA-50pF @ 25V115mA Ta--5V 10V±20V-11 ns115mA2V20V70V-2 V5 pF1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount6.010099mgSMD/SMT60V115mA60V-----
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LAST SHIPMENTS (Last Updated: 1 week ago)-TinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesObsolete1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2604031-300mW TjSingleENHANCEMENT MODE300mW1.7 nsN-ChannelSWITCHING2.5 Ω @ 240mA, 10V2.5V @ 250μA-26.7pF @ 25V260mA Ta0.81nC @ 5V1.2ns4.5V 10V±20V1.2 ns4.8 ns310mA-20V60V--------RoHS CompliantLead Free------Not Qualified0.26A---
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-19 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR994OhmFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING26040311370mW TaSingleENHANCEMENT MODE540mW7 nsN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA-50pF @ 25V250mA Ta0.22nC @ 4.5V-4.5V 10V±20V-11 ns250mA-20V60V--5 pF1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount7.994566mg-----0.24A2N7002E-7-FMatte Tin (Sn)LOW THRESHOLD
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