Diodes Incorporated 2N7002K-7
- Part Number:
- 2N7002K-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2477995-2N7002K-7
- Description:
- MOSFET N-CH 60V 0.38A SOT23-3
- Datasheet:
- 2N7002K-7
Diodes Incorporated 2N7002K-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002K-7.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance2Ohm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max370mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation350mW
- Turn On Delay Time3.9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C380mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.3nC @ 4.5V
- Rise Time3.4ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9.9 ns
- Turn-Off Delay Time15.7 ns
- Continuous Drain Current (ID)300mA
- Threshold Voltage1.6V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Nominal Vgs1.6 V
- Feedback Cap-Max (Crss)5 pF
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002K-7 Overview
A device's maximal input capacitance is 50pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.7 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.6V threshold voltage.This device reduces its overall power consumption by using drive voltage (5V 10V).
2N7002K-7 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15.7 ns
a threshold voltage of 1.6V
2N7002K-7 Applications
There are a lot of Diodes Incorporated
2N7002K-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 50pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.7 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.6V threshold voltage.This device reduces its overall power consumption by using drive voltage (5V 10V).
2N7002K-7 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15.7 ns
a threshold voltage of 1.6V
2N7002K-7 Applications
There are a lot of Diodes Incorporated
2N7002K-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
2N7002K-7 More Descriptions
DIODES INC. - 2N7002K-7 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V
2N7002K Series 60 V 2 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET, N-Ch, Enhancement,60V,0.38A, SOT23 | Diodes Inc 2N7002K-7
MOSFET, N CH, 60V, 0.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:60V; On Resistance
MOSFET, N CH, 60V, 0.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
2N7002K Series 60 V 2 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET, N-Ch, Enhancement,60V,0.38A, SOT23 | Diodes Inc 2N7002K-7
MOSFET, N CH, 60V, 0.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:60V; On Resistance
MOSFET, N CH, 60V, 0.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to 2N7002K-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountReach Compliance CodeJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinContinuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)TerminationVoltageCurrentDual Supply VoltageView Compare
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2N7002K-714 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)3EAR992OhmMatte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING26040311370mW TaSingleENHANCEMENT MODE350mW3.9 nsN-ChannelSWITCHING2 Ω @ 500mA, 10V2.5V @ 1mA50pF @ 25V380mA Ta0.3nC @ 4.5V3.4ns5V 10V±20V9.9 ns15.7 ns300mA1.6V20V60V1.6 V5 pF1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----------------
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3--TIN SILVER COPPER--MOSFET (Metal Oxide)BOTTOM-2604031-350mW Tc-ENHANCEMENT MODE--N-Channel-5 Ω @ 500mA, 10V3V @ 1mA60pF @ 25V200mA Ta--4.5V 10V±20V-------5 pF-----ROHS3 Compliant-NOunknownO-PBCY-T3COMMERCIALSINGLE WITH BUILT-IN DIODE60V0.2A5Ohm60V------
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---SOT-323(SC-70)----Tape & Reel (TR)------------------------N Channel-5Ω @ 500mA,10V2.5V @ 250uA-------------------RoHS Compliant------60V---115mA200mW----
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR997.5OhmMatte Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING--311200mW TaSingleENHANCEMENT MODE200mW7 nsN-Channel-7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta--5V 10V±20V-11 ns115mA2.1V20V60V2 V5 pF1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------SMD/SMT60V3A60V
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