Fairchild/ON Semiconductor 2N7000

Name: 2N7000
Brand: Fairchild/ON Semiconductor
SKU: 2478325-2N7000
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7000

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478325-2N7000

Description:: MOSFET N-CH 60V 200MA TO-92

ECAD Model:

Datasheet:: 2N700(0,2) Datasheet

Specifications

Fairchild/ON Semiconductor 2N7000 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N7000.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
11 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
201mg
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
5Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
200mA
Base Part Number
2N7000
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
400mW Ta
Element Configuration
Single
Power Dissipation
400mW
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Input Capacitance
40pF
Drain to Source Resistance
1.2Ohm
Rds On Max
5 Ω
Nominal Vgs
2.1 V
Height
5.2mm
Length
4.8mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N7000 Description

2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.

2N7000 Features

High cell density
High saturation current
Drain-to-source voltage of 60 V
Operating temperature of -55 °C to 150 °C
Rugged, reliable, and fast switching performance

2N7000 Applications

IC output
Audio preamplifier
Audio amplification
Microcontroller output
Various signal amplification
Switch or control loads under 200mA

2N7000 More Descriptions

Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk
ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
ON Semi THT MOSFET NFET 60V 200mA 5Ω 150°C TO-92 2N7000
N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Mosfet, N-Ch, 60V, 0.2A, To-226Aa; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000.
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Comparison

The three parts on the right have similar specifications to 2N7000.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Operating Mode

Turn On Delay Time

Transistor Application

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Drain Current-Max (Abs) (ID)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

View Compare
2N7000

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

11 Weeks

Copper, Silver, Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

TO-92-3

201mg

-55°C~150°C TJ

Bulk

2011

Active

1 (Unlimited)

5Ohm

150°C

-55°C

60V

MOSFET (Metal Oxide)

200mA

2N7000

1

1

400mW Ta

Single

400mW

N-Channel

5Ohm @ 500mA, 10V

3V @ 1mA

50pF @ 25V

200mA Ta

60V

4.5V 10V

±20V

10 ns

200mA

2.1V

20V

60V

40pF

1.2Ohm

5 Ω

2.1 V

5.2mm

4.8mm

4.19mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002ET3G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Tin

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2007

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

-

300mW Tj

Single

300mW

N-Channel

2.5 Ω @ 240mA, 10V

2.5V @ 250μA

26.7pF @ 25V

260mA Ta

-

4.5V 10V

±20V

4.8 ns

310mA

-

20V

60V

-

-

-

-

-

-

-

-

-

RoHS Compliant

Lead Free

YES

SILICON

e3

yes

3

EAR99

FET General Purpose Power

DUAL

GULL WING

260

40

3

Not Qualified

ENHANCEMENT MODE

1.7 ns

SWITCHING

0.81nC @ 5V

1.2ns

1.2 ns

0.26A

-

-

2N7000 vs 2N7002ET3G
2N7002W

Fairchild/ON Semiconductor

-

-

-

-

-

SOT-323(SC-70)

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

5Ω @ 500mA,10V

2.5V @ 250uA

-

-

60V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

115mA

200mW

2N7000 vs 2N7002W
2N7002_NB9G002

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SOT-23 (TO-236AB)

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

2N7002

-

-

200mW Ta

-

-

N-Channel

7.5Ohm @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

60V

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7000 vs 2N7002_NB9G002