Transphorm TPH3205WSB

Name: TPH3205WSB
Brand: Transphorm
SKU: 2479105-TPH3205WSB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TPH3205WSB

Manufacturer:: Transphorm

Ventron No:: 2479105-TPH3205WSB

Description:: GAN FET 650V 36A TO247

ECAD Model:

Datasheet:: TPH3205WS

Specifications

Transphorm TPH3205WSB technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3205WSB.

Factory Lead Time
10 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
GaNFET (Gallium Nitride)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
125W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
60m Ω @ 22A, 8V
Vgs(th) (Max) @ Id
2.6V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds
2200pF @ 400V
Current - Continuous Drain (Id) @ 25°C
36A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 8V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±18V
RoHS Status
RoHS Compliant

Description

TPH3205WSB Overview
A device's maximal input capacitance is 2200pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TPH3205WSB Features
a 650V drain to source voltage (Vdss)

TPH3205WSB Applications
There are a lot of Transphorm
TPH3205WSB applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

TPH3205WSB More Descriptions

GaN HEMT 650V / 34.7A / 0,063 Ohm, TO247 Package
GANFET N-CH 650V 36A TO247-3

Product Comparison

The three parts on the right have similar specifications to TPH3205WSB.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

View Compare
TPH3205WSB

Transphorm

10 Weeks

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

2016

yes

Obsolete

1 (Unlimited)

GaNFET (Gallium Nitride)

NOT SPECIFIED

unknown

NOT SPECIFIED

125W Tc

N-Channel

60m Ω @ 22A, 8V

2.6V @ 700μA

2200pF @ 400V

36A Tc

42nC @ 8V

650V

10V

±18V

RoHS Compliant

-
TPH3206LDB

Transphorm

-

Surface Mount

4-PowerDFN

-55°C~150°C TJ

Tube

2017

-

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

-

-

-

81W Tc

N-Channel

180m Ω @ 10A, 8V

2.6V @ 500μA

720pF @ 480V

16A Tc

6.2nC @ 4.5V

650V

10V

±18V

-

TPH3205WSB vs TPH3206LDB
TPH3208LDG

Transphorm

10 Weeks

Surface Mount

3-PowerDFN

-55°C~150°C TJ

Tube

2016

yes

Last Time Buy

3 (168 Hours)

GaNFET (Gallium Nitride)

-

unknown

-

96W Tc

N-Channel

130m Ω @ 13A, 8V

2.6V @ 300μA

760pF @ 400V

20A Tc

14nC @ 8V

650V

10V

±18V

RoHS Compliant

TPH3205WSB vs TPH3208LDG
TPH3202LD

Transphorm

14 Weeks

Surface Mount

4-PowerDFN

-55°C~175°C TJ

Tube

2016

yes

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

-

unknown

-

65W Tc

N-Channel

350m Ω @ 5.5A, 8V

2.5V @ 250μA

760pF @ 480V

9A Tc

9.3nC @ 4.5V

600V

10V

±18V

Non-RoHS Compliant

TPH3205WSB vs TPH3202LD