Transphorm TPH3206PSB
- Part Number:
- TPH3206PSB
- Manufacturer:
- Transphorm
- Ventron No:
- 2485691-TPH3206PSB
- Description:
- GAN FET 650V 16A TO220
- Datasheet:
- TPH3206PSB Datasheet
Transphorm TPH3206PSB technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3206PSB.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyGaNFET (Gallium Nitride)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max81W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs180m Ω @ 10A, 8V
- Vgs(th) (Max) @ Id2.6V @ 500μA
- Input Capacitance (Ciss) (Max) @ Vds720pF @ 480V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±18V
- RoHS StatusRoHS Compliant
TPH3206PSB Overview
The maximum input capacitance of this device is 720pF @ 480V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
TPH3206PSB Features
a 650V drain to source voltage (Vdss)
TPH3206PSB Applications
There are a lot of Transphorm
TPH3206PSB applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 720pF @ 480V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
TPH3206PSB Features
a 650V drain to source voltage (Vdss)
TPH3206PSB Applications
There are a lot of Transphorm
TPH3206PSB applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
TPH3206PSB More Descriptions
GANFET N-CH 650V 16A TO220AB
GAN FET 650V 16A TO220
GAN FET 650V 16A TO220
The three parts on the right have similar specifications to TPH3206PSB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsWeightSeriesNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningPbfree CodeView Compare
-
TPH3206PSB12 WeeksThrough HoleTO-220-3-55°C~150°C TJTube2016Active1 (Unlimited)GaNFET (Gallium Nitride)NOT SPECIFIEDunknownNOT SPECIFIED81W TcN-Channel180m Ω @ 10A, 8V2.6V @ 500μA720pF @ 480V16A Tc6.2nC @ 4.5V650V10V±18VRoHS Compliant----------------
-
12 WeeksSurface Mount8-PowerVDFN150°C TJTape & Reel (TR)2014Active1 (Unlimited)MOSFET (Metal Oxide)---1.6W Ta 57W TcN-Channel33m Ω @ 9A, 10V4V @ 300μA1100pF @ 75V18A Ta10.6nC @ 10V-10V±20VRoHS CompliantSurface Mount8850.995985mgU-MOSVIII-H1Single16 ns5.8ns5.1 ns17 ns18A20V150VNo-
-
10 WeeksSurface Mount3-PowerDFN-55°C~150°C TJTube2016Last Time Buy3 (168 Hours)GaNFET (Gallium Nitride)-unknown-96W TcN-Channel130m Ω @ 13A, 8V2.6V @ 300μA760pF @ 400V20A Tc14nC @ 8V650V10V±18VRoHS Compliant--------------yes
-
10 WeeksSurface Mount3-PowerDFN-55°C~175°C TJTube2017Obsolete3 (168 Hours)GaNFET (Gallium Nitride)-unknown-65W TcN-Channel350m Ω @ 5.5A, 8V2.5V @ 250μA760pF @ 480V9A Tc9.3nC @ 4.5V600V10V±18VNon-RoHS Compliant--------------yes
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