Transphorm TPH3206LDB

Name: TPH3206LDB
Brand: Transphorm
SKU: 2485681-TPH3206LDB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TPH3206LDB

Manufacturer:: Transphorm

Ventron No:: 2485681-TPH3206LDB

Description:: GAN FET 650V 16A PQFN88

ECAD Model:

Datasheet:: TPH3206L Series

Specifications

Transphorm TPH3206LDB technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3206LDB.

Mounting Type
Surface Mount
Package / Case
4-PowerDFN
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2017
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
GaNFET (Gallium Nitride)
Power Dissipation-Max
81W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
180m Ω @ 10A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds
720pF @ 480V
Current - Continuous Drain (Id) @ 25°C
16A Tc
Gate Charge (Qg) (Max) @ Vgs
6.2nC @ 4.5V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±18V

Description

TPH3206LDB Overview
The maximum input capacitance of this device is 720pF @ 480V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TPH3206LDB Features
a 650V drain to source voltage (Vdss)

TPH3206LDB Applications
There are a lot of Transphorm
TPH3206LDB applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

TPH3206LDB More Descriptions

GANFET N-CH 650V 16A PQFN

Product Comparison

The three parts on the right have similar specifications to TPH3206LDB.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Factory Lead Time

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

RoHS Status

Mount

Number of Pins

Weight

Series

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Pbfree Code

View Compare
TPH3206LDB

Transphorm

Surface Mount

4-PowerDFN

-55°C~150°C TJ

Tube

2017

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

81W Tc

N-Channel

180m Ω @ 10A, 8V

2.6V @ 500μA

720pF @ 480V

16A Tc

6.2nC @ 4.5V

650V

10V

±18V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TPH3206PSB

Transphorm

Through Hole

TO-220-3

-55°C~150°C TJ

Tube

2016

Active

1 (Unlimited)

GaNFET (Gallium Nitride)

81W Tc

N-Channel

180m Ω @ 10A, 8V

2.6V @ 500μA

720pF @ 480V

16A Tc

6.2nC @ 4.5V

650V

10V

±18V

12 Weeks

NOT SPECIFIED

unknown

NOT SPECIFIED

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TPH3206LDB vs TPH3206PSB
TPH3300CNH,L1Q

Toshiba Semiconductor and Storage

Surface Mount

8-PowerVDFN

150°C TJ

Tape & Reel (TR)

2014

Active

1 (Unlimited)

MOSFET (Metal Oxide)

1.6W Ta 57W Tc

N-Channel

33m Ω @ 9A, 10V

4V @ 300μA

1100pF @ 75V

18A Ta

10.6nC @ 10V

-

10V

±20V

12 Weeks

-

-

-

RoHS Compliant

Surface Mount

8

850.995985mg

U-MOSVIII-H

1

Single

16 ns

5.8ns

5.1 ns

17 ns

18A

20V

150V

No

-

TPH3206LDB vs TPH3300CNH,L1Q
TPH3208LDG

Transphorm

Surface Mount

3-PowerDFN

-55°C~150°C TJ

Tube

2016

Last Time Buy

3 (168 Hours)

GaNFET (Gallium Nitride)

96W Tc

N-Channel

130m Ω @ 13A, 8V

2.6V @ 300μA

760pF @ 400V

20A Tc

14nC @ 8V

650V

10V

±18V

10 Weeks

-

unknown

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

yes

TPH3206LDB vs TPH3208LDG