Transphorm TPH3202LD

Name: TPH3202LD
Brand: Transphorm
SKU: 2481190-TPH3202LD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TPH3202LD

Manufacturer:: Transphorm

Ventron No:: 2481190-TPH3202LD

Description:: GAN FET 600V 9A PQFN88

ECAD Model:

Datasheet:: TPH3202LD

Specifications

Transphorm TPH3202LD technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3202LD.

Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
4-PowerDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
GaNFET (Gallium Nitride)
Reach Compliance Code
unknown
Power Dissipation-Max
65W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
350m Ω @ 5.5A, 8V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 480V
Current - Continuous Drain (Id) @ 25°C
9A Tc
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 4.5V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±18V
RoHS Status
Non-RoHS Compliant

Description

TPH3202LD Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 760pF @ 480V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TPH3202LD Features
a 600V drain to source voltage (Vdss)

TPH3202LD Applications
There are a lot of Transphorm
TPH3202LD applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

TPH3202LD More Descriptions

GANFET N-CH 600V 9A 4PQFN

Product Comparison

The three parts on the right have similar specifications to TPH3202LD.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Technology

Reach Compliance Code

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Supplier Device Package

Series

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

View Compare
TPH3202LD

Transphorm

14 Weeks

Surface Mount

4-PowerDFN

-55°C~175°C TJ

Tube

2016

yes

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

unknown

65W Tc

N-Channel

350m Ω @ 5.5A, 8V

2.5V @ 250μA

760pF @ 480V

9A Tc

9.3nC @ 4.5V

600V

10V

±18V

Non-RoHS Compliant

-

-

-

-

-
TPH3206LD

Transphorm

14 Weeks

Surface Mount

4-PowerDFN

-55°C~175°C TJ

Tube

2016

yes

Obsolete

3 (168 Hours)

GaNFET (Gallium Nitride)

unknown

96W Tc

N-Channel

180m Ω @ 11A, 8V

2.6V @ 500μA

760pF @ 480V

17A Tc

9.3nC @ 4.5V

600V

10V

±18V

Non-RoHS Compliant

-

-

-

-

TPH3202LD vs TPH3206LD
TPH3R003PL,LQ

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

8-PowerVDFN

175°C TJ

Tape & Reel (TR)

2016

-

Active

1 (Unlimited)

MOSFET (Metal Oxide)

-

90W Tc

N-Channel

4.2mOhm @ 44A, 4.5V

2.1V @ 300μA

3825pF @ 15V

88A Tc

50nC @ 10V

30V

4.5V 10V

±20V

RoHS Compliant

8-SOP Advance (5x5)

U-MOSIX-H

-

-

TPH3202LD vs TPH3R003PL,LQ
TPH3206PSB

Transphorm

12 Weeks

Through Hole

TO-220-3

-55°C~150°C TJ

Tube

2016

-

Active

1 (Unlimited)

GaNFET (Gallium Nitride)

unknown

81W Tc

N-Channel

180m Ω @ 10A, 8V

2.6V @ 500μA

720pF @ 480V

16A Tc

6.2nC @ 4.5V

650V

10V

±18V

RoHS Compliant

-

-

NOT SPECIFIED

NOT SPECIFIED

TPH3202LD vs TPH3206PSB