Transphorm TPH3208LDG
- Part Number:
- TPH3208LDG
- Manufacturer:
- Transphorm
- Ventron No:
- 2481416-TPH3208LDG
- Description:
- GAN FET 650V 20A PQFN88
- Datasheet:
- TPH3208L Series
Transphorm TPH3208LDG technical specifications, attributes, parameters and parts with similar specifications to Transphorm TPH3208LDG.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case3-PowerDFN
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Pbfree Codeyes
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyGaNFET (Gallium Nitride)
- Reach Compliance Codeunknown
- Power Dissipation-Max96W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs130m Ω @ 13A, 8V
- Vgs(th) (Max) @ Id2.6V @ 300μA
- Input Capacitance (Ciss) (Max) @ Vds760pF @ 400V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 8V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±18V
- RoHS StatusRoHS Compliant
TPH3208LDG Overview
A device's maximal input capacitance is 760pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
TPH3208LDG Features
a 650V drain to source voltage (Vdss)
TPH3208LDG Applications
There are a lot of Transphorm
TPH3208LDG applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 760pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
TPH3208LDG Features
a 650V drain to source voltage (Vdss)
TPH3208LDG Applications
There are a lot of Transphorm
TPH3208LDG applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
TPH3208LDG More Descriptions
GANFET N-CH 650V 20A 3PQFN
The three parts on the right have similar specifications to TPH3208LDG.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)TechnologyReach Compliance CodePower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsWeightSeriesNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningView Compare
-
TPH3208LDG10 WeeksSurface Mount3-PowerDFN-55°C~150°C TJTube2016yesLast Time Buy3 (168 Hours)GaNFET (Gallium Nitride)unknown96W TcN-Channel130m Ω @ 13A, 8V2.6V @ 300μA760pF @ 400V20A Tc14nC @ 8V650V10V±18VRoHS Compliant---------------
-
-Surface Mount4-PowerDFN-55°C~150°C TJTube2017-Obsolete3 (168 Hours)GaNFET (Gallium Nitride)-81W TcN-Channel180m Ω @ 10A, 8V2.6V @ 500μA720pF @ 480V16A Tc6.2nC @ 4.5V650V10V±18V---------------
-
12 WeeksSurface Mount8-PowerVDFN150°C TJTape & Reel (TR)2014-Active1 (Unlimited)MOSFET (Metal Oxide)-1.6W Ta 57W TcN-Channel33m Ω @ 9A, 10V4V @ 300μA1100pF @ 75V18A Ta10.6nC @ 10V-10V±20VRoHS CompliantSurface Mount8850.995985mgU-MOSVIII-H1Single16 ns5.8ns5.1 ns17 ns18A20V150VNo
-
10 WeeksSurface Mount3-PowerDFN-55°C~175°C TJTube2017yesObsolete3 (168 Hours)GaNFET (Gallium Nitride)unknown65W TcN-Channel350m Ω @ 5.5A, 8V2.5V @ 250μA760pF @ 480V9A Tc9.3nC @ 4.5V600V10V±18VNon-RoHS Compliant--------------
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