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STGFW20V60DF

STMicroelectronics STGFW20V60DF

Part Number:
STGFW20V60DF
Manufacturer:
STMicroelectronics
Ventron No:
2494360-STGFW20V60DF
Description:
IGBT 600V 40A 52W TO-3PF
ECAD Model:
Datasheet:
STGFW20V60DF

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Specifications
STMicroelectronics STGFW20V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGFW20V60DF.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    32 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3 Full Pack
  • Number of Pins
    3
  • Weight
    6.961991g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    52W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGFW20
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    52W
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    40A
  • Reverse Recovery Time
    40 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.8V
  • Test Condition
    400V, 20A, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 20A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    116nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    38ns/149ns
  • Switching Energy
    200μJ (on), 130μJ (off)
  • Height
    26.7mm
  • Length
    15.7mm
  • Width
    5.7mm
  • RoHS Status
    ROHS3 Compliant
Description

STGFW20V60DF Description


STGFW20V60DF IGBT is the most advanced IGBT. With the most advanced NPT IGBT technology, STGFW20V60DF IGBTs deliver the highest performance for applications that require low power inverters where short-circuit durability and low-loss characteristics. STMicroelectronics STGFW20V60DF is crucial including HID, MOTOR CONTROL, WELDING as well as STATICAL RELAYS.


STGFW20V60DF Features


Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.8 V (typ.) @ IC = 20 A
Tight parameter distribution
Safe paralleling
Low thermal resistance

STGFW20V60DF Applications


Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
STGFW20V60DF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trans IGBT Chip N-CH 600V 40A 52000mW 3-Pin(3 Tab) TO-3PF Tube
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
IGBT Trench gate,600V 20A/100 deg,TO-3P
Igbt |Stmicroelectronics STGFW20V60DF
IGBT Transistors IGBT & Power Bipolar
Product Comparison
The three parts on the right have similar specifications to STGFW20V60DF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    RoHS Status
    Transistor Element Material
    Series
    Pbfree Code
    Number of Terminations
    Subcategory
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Lead Free
    JESD-609 Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Rise Time
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    REACH SVHC
    Radiation Hardening
    View Compare
  • STGFW20V60DF
    STGFW20V60DF
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    32 Weeks
    Through Hole
    Through Hole
    TO-3P-3 Full Pack
    3
    6.961991g
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    52W
    NOT SPECIFIED
    NOT SPECIFIED
    STGFW20
    Single
    Standard
    52W
    600V
    40A
    40 ns
    600V
    1.8V
    400V, 20A, 15V
    2.2V @ 15V, 20A
    Trench Field Stop
    116nC
    80A
    38ns/149ns
    200μJ (on), 130μJ (off)
    26.7mm
    15.7mm
    5.7mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGF30NC60S
    STGF30NC60S
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    -
    40W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF30
    Single
    Standard
    -
    600V
    22A
    -
    600V
    1.5V
    480V, 20A, 10 Ω, 15V
    1.9V @ 15V, 20A
    -
    96nC
    150A
    21.5ns/180ns
    300μJ (on), 1.28mJ (off)
    -
    -
    -
    ROHS3 Compliant
    SILICON
    PowerMESH™
    yes
    3
    Insulated Gate BIP Transistors
    3
    Not Qualified
    1
    40W
    ISOLATED
    21.5 ns
    POWER CONTROL
    N-CHANNEL
    260 ns
    TO-220AB
    30 ns
    555 ns
    20V
    5.75V
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGFW20V60DF vs STGF30NC60S
  • STGF7H60DF
    STGF7H60DF
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    24W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF7
    -
    Standard
    24W
    1.95V
    14A
    136 ns
    600V
    -
    400V, 7A, 47 Ω, 15V
    1.95V @ 15V, 7A
    Trench Field Stop
    46nC
    28A
    30ns/160ns
    99μJ (on), 100μJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGFW20V60DF vs STGF7H60DF
  • STGF19NC60HD
    STGF19NC60HD
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    32W
    -
    -
    STGF19
    Single
    Standard
    -
    600V
    16A
    31 ns
    600V
    1.8V
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    16.4mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    SILICON
    PowerMESH™
    -
    3
    Insulated Gate BIP Transistors
    3
    -
    1
    35W
    ISOLATED
    25 ns
    POWER CONTROL
    N-CHANNEL
    97 ns
    TO-220AB
    32 ns
    272 ns
    20V
    5.75V
    Lead Free
    e3
    Matte Tin (Sn)
    600V
    9A
    7ns
    600V
    16A
    No SVHC
    No
    STGFW20V60DF vs STGF19NC60HD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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