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STGFL6NC60D

STMicroelectronics STGFL6NC60D

Part Number:
STGFL6NC60D
Manufacturer:
STMicroelectronics
Ventron No:
2854563-STGFL6NC60D
Description:
IGBT 600V 7A 22W TO220FP
ECAD Model:
Datasheet:
STGFL6NC60D

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Specifications
STMicroelectronics STGFL6NC60D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGFL6NC60D.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    22W
  • Base Part Number
    STGFL6
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Turn On Delay Time
    6.7 ns
  • Power - Max
    22W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    67 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    7A
  • Reverse Recovery Time
    30 ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    10.5 ns
  • Test Condition
    390V, 3A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 3A
  • Turn Off Time-Nom (toff)
    122 ns
  • Gate Charge
    12nC
  • Current - Collector Pulsed (Icm)
    25A
  • Td (on/off) @ 25°C
    6.7ns/46ns
  • Switching Energy
    46.5μJ (on), 23.5μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGFL6NC60D                         Description Based on PowerMESH technology and thanks to a new lifetime control system, this new series exhibits very low turn-off energy realizing the best trade-off between on-state voltage and switching losses and so allowing very high operating Frequencies.  
STGFL6NC60D                         Features ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode
STGFL6NC60D                         Applications ■ Very high frequency operation ■ High frequency lamp ballast ■ SMPS and PFC (hard switching too)  

STGFL6NC60D More Descriptions
STGFL6NC60D Series 600 V 6 A Flange Mount Hyper Fast IGBT - TO-220
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
6A, 600 V hyper fast IGBT with very fast diode
Product Comparison
The three parts on the right have similar specifications to STGFL6NC60D.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation
    Collector Emitter Saturation Voltage
    Max Junction Temperature (Tj)
    Continuous Collector Current
    IGBT Type
    Height
    Voltage - Rated DC
    Current Rating
    Rise Time
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Length
    Width
    REACH SVHC
    View Compare
  • STGFL6NC60D
    STGFL6NC60D
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    Insulated Gate BIP Transistors
    22W
    STGFL6
    3
    1
    Single
    ISOLATED
    Standard
    6.7 ns
    22W
    POWER CONTROL
    N-CHANNEL
    67 ns
    600V
    7A
    30 ns
    TO-220AB
    600V
    10.5 ns
    390V, 3A, 10 Ω, 15V
    2.9V @ 15V, 3A
    122 ns
    12nC
    25A
    6.7ns/46ns
    46.5μJ (on), 23.5μJ (off)
    20V
    5.75V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGF5H60DF
    STGF5H60DF
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -55°C~175°C TJ
    Tube
    -
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    24W
    STGF5
    -
    -
    -
    -
    Standard
    30 ns
    -
    -
    -
    140 ns
    600V
    10A
    134.5 ns
    -
    600V
    -
    400V, 5A, 47 Ω, 15V
    1.95V @ 15V, 5A
    -
    43nC
    20A
    30ns/140ns
    56μJ (on), 78.5μJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    20 Weeks
    NOT SPECIFIED
    NOT SPECIFIED
    24W
    1.5V
    175°C
    10A
    Trench Field Stop
    20mm
    -
    -
    -
    -
    -
    -
    -
    -
    STGFL6NC60D vs STGF5H60DF
  • STGF19NC60HD
    STGF19NC60HD
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    32W
    STGF19
    3
    1
    Single
    ISOLATED
    Standard
    25 ns
    -
    POWER CONTROL
    N-CHANNEL
    97 ns
    600V
    16A
    31 ns
    TO-220AB
    600V
    32 ns
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    272 ns
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    20V
    5.75V
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    -
    -
    35W
    1.8V
    -
    -
    -
    16.4mm
    600V
    9A
    7ns
    600V
    16A
    10.4mm
    4.6mm
    No SVHC
    STGFL6NC60D vs STGF19NC60HD
  • STGF8NC60KD
    STGF8NC60KD
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    -
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Insulated Gate BIP Transistors
    24W
    STGF8
    3
    1
    Single
    ISOLATED
    Standard
    -
    24W
    POWER CONTROL
    N-CHANNEL
    -
    600V
    7A
    23.5 ns
    TO-220AB
    600V
    23 ns
    390V, 3A, 10 Ω, 15V
    2.75V @ 15V, 3A
    242 ns
    19nC
    30A
    17ns/72ns
    55μJ (on), 85μJ (off)
    20V
    6.5V
    No
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGFL6NC60D vs STGF8NC60KD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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