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STGF10H60DF

STMicroelectronics STGF10H60DF

Part Number:
STGF10H60DF
Manufacturer:
STMicroelectronics
Ventron No:
2495448-STGF10H60DF
Description:
IGBT 600V 20A 30W TO220FP
ECAD Model:
Datasheet:
STGF10H60DF

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Specifications
STMicroelectronics STGF10H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGF10H60DF.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    2.299997g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    30W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGF10
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    30W
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    20A
  • Reverse Recovery Time
    107 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.5V
  • Test Condition
    400V, 10A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 10A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    57nC
  • Current - Collector Pulsed (Icm)
    40A
  • Td (on/off) @ 25°C
    19.5ns/103ns
  • Switching Energy
    83μJ (on), 140μJ (off)
  • Height
    16.4mm
  • Length
    10.4mm
  • Width
    4.6mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGF10H60DF Description
STGF10H60DF were created employing a cutting-edge unique trench gate fieldstop construction. These devices are part of the H series of IGBTs, which provides the best balance of conduction and switching losses for high switching frequency converter efficiency. In addition, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution make paralleling safer.

STGF10H60DF Features

? Switching at a high rate
? A tight distribution of parameters
? Secure parallelization
? Thermal resistance is low
? Rated for short-circuiting
? Antiparallel diode with ultrafast soft recovery

STGF10H60DF Applications

? Motor management
? UPS services
? PFC (Perfluorocarbon)

STGF10H60DF More Descriptions
Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3 Tab) TO-220FP Tube
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 600V, 20A, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
Product Comparison
The three parts on the right have similar specifications to STGF10H60DF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Transistor Element Material
    Series
    Pbfree Code
    Number of Terminations
    Subcategory
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    JESD-609 Code
    Terminal Finish
    Rise Time
    Continuous Collector Current
    REACH SVHC
    Radiation Hardening
    View Compare
  • STGF10H60DF
    STGF10H60DF
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.299997g
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    30W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF10
    Single
    Standard
    30W
    600V
    20A
    107 ns
    600V
    1.5V
    400V, 10A, 10 Ω, 15V
    1.95V @ 15V, 10A
    Trench Field Stop
    57nC
    40A
    19.5ns/103ns
    83μJ (on), 140μJ (off)
    16.4mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGF30NC60S
    STGF30NC60S
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    -
    40W
    NOT SPECIFIED
    NOT SPECIFIED
    STGF30
    Single
    Standard
    -
    600V
    22A
    -
    600V
    1.5V
    480V, 20A, 10 Ω, 15V
    1.9V @ 15V, 20A
    -
    96nC
    150A
    21.5ns/180ns
    300μJ (on), 1.28mJ (off)
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    SILICON
    PowerMESH™
    yes
    3
    Insulated Gate BIP Transistors
    3
    Not Qualified
    1
    40W
    ISOLATED
    21.5 ns
    POWER CONTROL
    N-CHANNEL
    260 ns
    TO-220AB
    30 ns
    555 ns
    20V
    5.75V
    -
    -
    -
    -
    -
    -
    STGF10H60DF vs STGF30NC60S
  • STGFW80V60F
    STGFW80V60F
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    32 Weeks
    Through Hole
    Through Hole
    TO-3P-3 Full Pack
    3
    6.961991g
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    79W
    NOT SPECIFIED
    NOT SPECIFIED
    STGFW80
    Single
    Standard
    79W
    600V
    120A
    -
    600V
    1.85V
    400V, 80A, 10 Ω, 15V
    2.3V @ 15V, 80A
    Trench Field Stop
    448nC
    240A
    60ns/220ns
    1.8mJ (on), 1mJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGF10H60DF vs STGFW80V60F
  • STGF7NB60SL
    STGF7NB60SL
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.299997g
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    25W
    -
    -
    STGF7
    Single
    Standard
    -
    600V
    15A
    -
    600V
    1.2V
    480V, 7A, 1k Ω, 5V
    1.6V @ 4.5V, 7A
    -
    16nC
    20A
    1.1μs/5.2μs
    4.1mJ (off)
    9.3mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    Lead Free
    SILICON
    PowerMESH™
    -
    3
    Insulated Gate BIP Transistors
    3
    -
    1
    25W
    ISOLATED
    1.1 μs
    POWER CONTROL
    N-CHANNEL
    -
    -
    1350 ns
    8100 ns
    20V
    2.4V
    e3
    Matte Tin (Sn) - annealed
    250ns
    15A
    No SVHC
    No
    STGF10H60DF vs STGF7NB60SL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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