STMicroelectronics STGD8NC60KDT4

Name: STGD8NC60KDT4
Brand: STMicroelectronics
SKU: 3587262-STGD8NC60KDT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGD8NC60KDT4

Manufacturer:: STMicroelectronics

Ventron No:: 3587262-STGD8NC60KDT4

Description:: IGBT 600V 15A 62W DPAK

ECAD Model:

Datasheet:: STGD8NC60KDT4

Specifications

STMicroelectronics STGD8NC60KDT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD8NC60KDT4.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
350.003213mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
62W
Terminal Form
GULL WING
Base Part Number
STGD8
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
17 ns
Power - Max
62W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
72 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
15A
Reverse Recovery Time
23.5 ns
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
23 ns
Test Condition
390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.75V @ 15V, 3A
Turn Off Time-Nom (toff)
242 ns
Gate Charge
19nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
17ns/72ns
Switching Energy
55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGD8NC60KDT4 Description
The STGD8NC60KDT4 is a 600 V - 8 A - short circuit rugged IGBT. This IGBT makes excellent use of the cutting-edge PowerMESH? technology to balance switching performance and minimal on-state behavior.

STGD8NC60KDT4 Features
Very soft ultra fast recovery antiparallel diode
Short circuit withstand time 10 μs
Lower on voltage drop (VCE(sat))
Lower CRES / CIES ratio (no cross-conduction susceptibility)
High input impedance

STGD8NC60KDT4 Applications
High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
AC and DC motor drives
Solar inverters

STGD8NC60KDT4 More Descriptions

Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2 Tab) DPAK T/R
New short circuit rugged "K" series
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Product Comparison

The three parts on the right have similar specifications to STGD8NC60KDT4.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Terminal Form

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Input Type

Turn On Delay Time

Power - Max

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

Voltage - Collector Emitter Breakdown (Max)

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Power Dissipation

Rise Time

JEDEC-95 Code

Collector Emitter Saturation Voltage

Continuous Collector Current

Reach Compliance Code

Qualification Status

View Compare
STGD8NC60KDT4

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

350.003213mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

Active

1 (Unlimited)

2

EAR99

Insulated Gate BIP Transistors

62W

GULL WING

STGD8

3

R-PSSO-G2

1

Single

COLLECTOR

Standard

17 ns

62W

POWER CONTROL

N-CHANNEL

72 ns

600V

15A

23.5 ns

600V

600V

23 ns

390V, 3A, 10 Ω, 15V

2.75V @ 15V, 3A

242 ns

19nC

30A

17ns/72ns

55μJ (on), 85μJ (off)

20V

6.5V

2.4mm

6.6mm

6.2mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGD7NB120S-1

STMicroelectronics

-

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

-

SILICON

150°C TJ

Tube

PowerMESH™

Obsolete

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

55W

-

STGD7

3

-

1

Single

-

Standard

-

55W

MOTOR CONTROL

N-CHANNEL

-

1.2kV

10A

-

1.2kV

-

840 ns

960V, 7A, 1k Ω, 15V

2.1V @ 15V, 7A

-

29nC

20A

570ns/-

15mJ (off)

20V

5V

-

-

-

No

ROHS3 Compliant

-

e0

Tin/Lead (Sn/Pb)

1200V

-

-

-

-

-

-

-

-

-

-

-

STGD8NC60KDT4 vs STGD7NB120S-1
STGD7NC60HT4

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

3.949996g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

Active

1 (Unlimited)

2

EAR99

Insulated Gate BIP Transistors

70W

GULL WING

STGD7

3

R-PSSO-G2

1

Single

-

Standard

18.5 ns

-

POWER CONTROL

N-CHANNEL

116 ns

600V

25A

-

600V

600V

25.5 ns

390V, 7A, 10 Ω, 15V

2.5V @ 15V, 7A

221 ns

35nC

50A

18.5ns/72ns

95μJ (on), 115μJ (off)

20V

5.75V

2.4mm

6.6mm

6.2mm

No

ROHS3 Compliant

Lead Free

e3

Matte Tin (Sn) - annealed

-

600V

260

7A

30

70W

8.5ns

TO-252AA

2.5V

14A

-

-

STGD8NC60KDT4 vs STGD7NC60HT4
STGD10NC60HDT4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

Obsolete

1 (Unlimited)

2

EAR99

Insulated Gate BIP Transistors

62W

GULL WING

STGD10

3

R-PSSO-G2

1

Single

COLLECTOR

Standard

-

62W

POWER CONTROL

N-CHANNEL

-

600V

20A

22 ns

600V

600V

19 ns

390V, 5A, 10 Ω, 15V

2.5V @ 15V, 5A

247 ns

19.2nC

30A

14.2ns/72ns

31.8μJ (on), 95μJ (off)

20V

5.75V

-

-

-

-

ROHS3 Compliant

-

e3

Matte Tin (Sn) - annealed

-

-

260

-

NOT SPECIFIED

-

-

TO-252AA

-

-

not_compliant

Not Qualified

STGD8NC60KDT4 vs STGD10NC60HDT4