STMicroelectronics STGD10HF60KD
- Part Number:
- STGD10HF60KD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3072194-STGD10HF60KD
- Description:
- IGBT 600V 10A DPAK
- Datasheet:
- STGD10HF60KD
STMicroelectronics STGD10HF60KD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD10HF60KD.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation62.5W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGD10
- Input TypeStandard
- Power - Max62.5W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.75V
- Max Collector Current18A
- Reverse Recovery Time50 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Test Condition400V, 5A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.75V @ 15V, 5A
- Gate Charge23nC
- Current - Collector Pulsed (Icm)30A
- Td (on/off) @ 25°C9.5ns/87ns
- Switching Energy45μJ (on), 105μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- RoHS StatusROHS3 Compliant
STGD10HF60KD Description
The device STGD10HF60KD uses advanced power mesh technology to manufacture IGBT and Turbo2 ultra-fast high voltage technology to manufacture diodes. This combination achieves a very good tradeoff between turn-on loss and switching behavior, making the product an ideal choice for a variety of high-voltage applications operating at high frequencies. STGD10HF60KD Features
? Designed for automotive applications and AEC-Q101 qualified ? Low on-voltage drop (VCE(sat)) ? Low Cres / Cies ratio (no cross conduction susceptibility) ? Switching losses include diode recovery energy ? Short-circuit rated ? Very soft Ultrafast recovery anti-parallel diode
STGD10HF60KD Applications
? High frequency inverters ? SMPS and PFC in both hard switch and resonant topologies ? Motor drives ? Injection systems
The device STGD10HF60KD uses advanced power mesh technology to manufacture IGBT and Turbo2 ultra-fast high voltage technology to manufacture diodes. This combination achieves a very good tradeoff between turn-on loss and switching behavior, making the product an ideal choice for a variety of high-voltage applications operating at high frequencies. STGD10HF60KD Features
? Designed for automotive applications and AEC-Q101 qualified ? Low on-voltage drop (VCE(sat)) ? Low Cres / Cies ratio (no cross conduction susceptibility) ? Switching losses include diode recovery energy ? Short-circuit rated ? Very soft Ultrafast recovery anti-parallel diode
STGD10HF60KD Applications
? High frequency inverters ? SMPS and PFC in both hard switch and resonant topologies ? Motor drives ? Injection systems
STGD10HF60KD More Descriptions
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
Trans IGBT Chip N-CH 600V 18A 62500mW Automotive 3-Pin(2 Tab) DPAK T/R
TRANSISTOR, IGBT, 600V, 18A, TO-252; Continuous Collector Current:18A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:62.5W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
Trans IGBT Chip N-CH 600V 18A 62500mW Automotive 3-Pin(2 Tab) DPAK T/R
TRANSISTOR, IGBT, 600V, 18A, TO-252; Continuous Collector Current:18A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:62.5W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
The three parts on the right have similar specifications to STGD10HF60KD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusNumber of PinsWeightTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal FormPin CountJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionTurn On Delay TimeTransistor ApplicationTurn-Off Delay TimeCollector Emitter Saturation VoltageTurn On TimeTurn Off Time-Nom (toff)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeVoltage - Rated DCCurrent RatingPower DissipationJEDEC-95 CodeContinuous Collector CurrentView Compare
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STGD10HF60KDACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJCut Tape (CT)Automotive, AEC-Q101e3Active1 (Unlimited)EAR99Matte Tin (Sn) - annealedInsulated Gate BIP Transistors62.5WNOT SPECIFIEDnot_compliantNOT SPECIFIEDSTGD10Standard62.5WN-CHANNEL2.75V18A50 ns600V600V400V, 5A, 10 Ω, 15V2.75V @ 15V, 5A23nC30A9.5ns/87ns45μJ (on), 105μJ (off)20V6.5VROHS3 Compliant-----------------------------
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ACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, PowerMESH™e3Active1 (Unlimited)EAR99Matte Tin (Sn)Insulated Gate BIP Transistors125W260-30STGD18Logic125WN-CHANNEL360V25A-420V420V300V, 10A, 5V1.7V @ 4.5V, 10A29nC40A650ns/13.5μs-16V-ROHS3 Compliant3350.003213mgSILICON2VOLTAGE CLAMPINGGULL WING3R-PSSO-G21SingleCOLLECTOR650 msAUTOMOTIVE IGNITION13.5 s1.35V4450 ns22200 ns2.4mm6.6mm6.2mmNo SVHCNoLead Free-----
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ACTIVE (Last Updated: 8 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)PowerMESH™e3Active1 (Unlimited)EAR99Tin (Sn)Insulated Gate BIP Transistors56W260-30STGD6Standard-N-CHANNEL600V15A21 ns600V600V390V, 3A, 10 Ω, 15V2.5V @ 15V, 3A13.6nC21A12ns/76ns20μJ (on), 68μJ (off)20V5.75VROHS3 Compliant3350.003213mgSILICON2-GULL WING3R-PSSO-G21Single-12 nsPOWER CONTROL40 ns1.9V17.3 ns222 ns2.4mm6.6mm6.2mm-NoLead Free600V15A50WTO-252AA6A
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ACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101-Active1 (Unlimited)EAR99--125WNOT SPECIFIED-NOT SPECIFIEDSTGD19Logic125W-1.5V25A-390V390V300V, 10A, 1k Ω, 5V1.5V @ 4.5V, 10A17nC40A650ns/13.5μs---ROHS3 Compliant3--------Single-------2.4mm6.6mm6.2mm--Lead Free-----
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