STGD10HF60KD

STMicroelectronics STGD10HF60KD

Part Number:
STGD10HF60KD
Manufacturer:
STMicroelectronics
Ventron No:
3072194-STGD10HF60KD
Description:
IGBT 600V 10A DPAK
ECAD Model:
Datasheet:
STGD10HF60KD

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Specifications
STMicroelectronics STGD10HF60KD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD10HF60KD.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    Automotive, AEC-Q101
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    62.5W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGD10
  • Input Type
    Standard
  • Power - Max
    62.5W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.75V
  • Max Collector Current
    18A
  • Reverse Recovery Time
    50 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Max Breakdown Voltage
    600V
  • Test Condition
    400V, 5A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.75V @ 15V, 5A
  • Gate Charge
    23nC
  • Current - Collector Pulsed (Icm)
    30A
  • Td (on/off) @ 25°C
    9.5ns/87ns
  • Switching Energy
    45μJ (on), 105μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status
    ROHS3 Compliant
Description
STGD10HF60KD Description
The device STGD10HF60KD uses advanced power mesh technology to manufacture IGBT and Turbo2 ultra-fast high voltage technology to manufacture diodes. This combination achieves a very good tradeoff between turn-on loss and switching behavior, making the product an ideal choice for a variety of high-voltage applications operating at high frequencies.   STGD10HF60KD Features
? Designed for automotive applications and AEC-Q101 qualified ? Low on-voltage drop (VCE(sat)) ? Low Cres / Cies ratio (no cross conduction susceptibility) ? Switching losses include diode recovery energy ? Short-circuit rated ? Very soft Ultrafast recovery anti-parallel diode
STGD10HF60KD Applications
? High frequency inverters ? SMPS and PFC in both hard switch and resonant topologies ? Motor drives ? Injection systems
STGD10HF60KD More Descriptions
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
Trans IGBT Chip N-CH 600V 18A 62500mW Automotive 3-Pin(2 Tab) DPAK T/R
TRANSISTOR, IGBT, 600V, 18A, TO-252; Continuous Collector Current:18A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:62.5W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to STGD10HF60KD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Number of Pins
    Weight
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Case Connection
    Turn On Delay Time
    Transistor Application
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    Turn On Time
    Turn Off Time-Nom (toff)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    JEDEC-95 Code
    Continuous Collector Current
    View Compare
  • STGD10HF60KD
    STGD10HF60KD
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn) - annealed
    Insulated Gate BIP Transistors
    62.5W
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    STGD10
    Standard
    62.5W
    N-CHANNEL
    2.75V
    18A
    50 ns
    600V
    600V
    400V, 5A, 10 Ω, 15V
    2.75V @ 15V, 5A
    23nC
    30A
    9.5ns/87ns
    45μJ (on), 105μJ (off)
    20V
    6.5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGD18N40LZT4
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, PowerMESH™
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    125W
    260
    -
    30
    STGD18
    Logic
    125W
    N-CHANNEL
    360V
    25A
    -
    420V
    420V
    300V, 10A, 5V
    1.7V @ 4.5V, 10A
    29nC
    40A
    650ns/13.5μs
    -
    16V
    -
    ROHS3 Compliant
    3
    350.003213mg
    SILICON
    2
    VOLTAGE CLAMPING
    GULL WING
    3
    R-PSSO-G2
    1
    Single
    COLLECTOR
    650 ms
    AUTOMOTIVE IGNITION
    13.5 s
    1.35V
    4450 ns
    22200 ns
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
  • STGD6NC60HDT4
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    Insulated Gate BIP Transistors
    56W
    260
    -
    30
    STGD6
    Standard
    -
    N-CHANNEL
    600V
    15A
    21 ns
    600V
    600V
    390V, 3A, 10 Ω, 15V
    2.5V @ 15V, 3A
    13.6nC
    21A
    12ns/76ns
    20μJ (on), 68μJ (off)
    20V
    5.75V
    ROHS3 Compliant
    3
    350.003213mg
    SILICON
    2
    -
    GULL WING
    3
    R-PSSO-G2
    1
    Single
    -
    12 ns
    POWER CONTROL
    40 ns
    1.9V
    17.3 ns
    222 ns
    2.4mm
    6.6mm
    6.2mm
    -
    No
    Lead Free
    600V
    15A
    50W
    TO-252AA
    6A
  • STGD19N40LZ
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101
    -
    Active
    1 (Unlimited)
    EAR99
    -
    -
    125W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STGD19
    Logic
    125W
    -
    1.5V
    25A
    -
    390V
    390V
    300V, 10A, 1k Ω, 5V
    1.5V @ 4.5V, 10A
    17nC
    40A
    650ns/13.5μs
    -
    -
    -
    ROHS3 Compliant
    3
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    -
    -
    -
    -
    -
    -
    -
    2.4mm
    6.6mm
    6.2mm
    -
    -
    Lead Free
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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