STGD7NB60ST4

STMicroelectronics STGD7NB60ST4

Part Number:
STGD7NB60ST4
Manufacturer:
STMicroelectronics
Ventron No:
2854811-STGD7NB60ST4
Description:
IGBT 600V 15A 55W DPAK
ECAD Model:
Datasheet:
STGD7NB60ST4

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Specifications
STMicroelectronics STGD7NB60ST4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD7NB60ST4.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    55W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    7A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STGD7
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    55W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    MOTOR CONTROL
  • Drain to Source Voltage (Vdss)
    600V
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    15A
  • Continuous Drain Current (ID)
    7A
  • JEDEC-95 Code
    TO-252AA
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.6V
  • Max Breakdown Voltage
    600V
  • Turn On Time
    1160 ns
  • Test Condition
    480V, 7A, 1k Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.6V @ 15V, 7A
  • Gate Charge
    33nC
  • Current - Collector Pulsed (Icm)
    60A
  • Td (on/off) @ 25°C
    700ns/-
  • Switching Energy
    3.5mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGD7NB60ST4 Description
The STGD7NB60ST4 is an N Channel 7A - 600V DPAK Power MESHTM IGBT.

STGD7NB60ST4 Features
High Input Impedance (Voltage Driven)
Very Low ON-Voltage Drop (VCESAT)
High Current Capability
Off Losses Include Tail Curren
Surface-Mounting DPAK (TO-252) Power Package in Tape & Reel

STGD7NB60ST4 Applications
Light Dimmer
Static Relays
Motor Control
STGD7NB60ST4 More Descriptions
Trans IGBT Chip N-CH 600V 15A 55000mW 3-Pin(2 Tab) DPAK T/R
STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp
Short-circuit rugged IGBT, DPAK, Tape and ReelSTMicroelectronics SCT
Igbt |Stmicroelectronics STGD7NB60ST4
Product Comparison
The three parts on the right have similar specifications to STGD7NB60ST4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Reach Compliance Code
    Power - Max
    Reverse Recovery Time
    Weight
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Height
    Length
    Width
    Qualification Status
    View Compare
  • STGD7NB60ST4
    STGD7NB60ST4
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Insulated Gate BIP Transistors
    600V
    55W
    GULL WING
    260
    7A
    30
    STGD7
    3
    R-PSSO-G2
    1
    Single
    55W
    COLLECTOR
    Standard
    MOTOR CONTROL
    600V
    N-CHANNEL
    600V
    15A
    7A
    TO-252AA
    600V
    1.6V
    600V
    1160 ns
    480V, 7A, 1k Ω, 15V
    1.6V @ 15V, 7A
    33nC
    60A
    700ns/-
    3.5mJ (off)
    20V
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGD10HF60KD
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101
    e3
    Active
    1 (Unlimited)
    -
    EAR99
    Insulated Gate BIP Transistors
    -
    62.5W
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STGD10
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    N-CHANNEL
    2.75V
    18A
    -
    -
    600V
    -
    600V
    -
    400V, 5A, 10 Ω, 15V
    2.75V @ 15V, 5A
    23nC
    30A
    9.5ns/87ns
    45μJ (on), 105μJ (off)
    20V
    6.5V
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn) - annealed
    not_compliant
    62.5W
    50 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGD7NC60HT4
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Insulated Gate BIP Transistors
    600V
    70W
    GULL WING
    260
    7A
    30
    STGD7
    3
    R-PSSO-G2
    1
    Single
    70W
    -
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    600V
    25A
    -
    TO-252AA
    600V
    2.5V
    600V
    25.5 ns
    390V, 7A, 10 Ω, 15V
    2.5V @ 15V, 7A
    35nC
    50A
    18.5ns/72ns
    95μJ (on), 115μJ (off)
    20V
    5.75V
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn) - annealed
    -
    -
    -
    3.949996g
    18.5 ns
    8.5ns
    116 ns
    14A
    221 ns
    2.4mm
    6.6mm
    6.2mm
    -
  • STGD10NC60HDT4
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerMESH™
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Insulated Gate BIP Transistors
    -
    62W
    GULL WING
    260
    -
    NOT SPECIFIED
    STGD10
    3
    R-PSSO-G2
    1
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    600V
    20A
    -
    TO-252AA
    600V
    -
    600V
    19 ns
    390V, 5A, 10 Ω, 15V
    2.5V @ 15V, 5A
    19.2nC
    30A
    14.2ns/72ns
    31.8μJ (on), 95μJ (off)
    20V
    5.75V
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn) - annealed
    not_compliant
    62W
    22 ns
    -
    -
    -
    -
    -
    247 ns
    -
    -
    -
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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