STMicroelectronics STGD7NB60ST4
- Part Number:
- STGD7NB60ST4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854811-STGD7NB60ST4
- Description:
- IGBT 600V 15A 55W DPAK
- Datasheet:
- STGD7NB60ST4
STMicroelectronics STGD7NB60ST4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD7NB60ST4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation55W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating7A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTGD7
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation55W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationMOTOR CONTROL
- Drain to Source Voltage (Vdss)600V
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current15A
- Continuous Drain Current (ID)7A
- JEDEC-95 CodeTO-252AA
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
- Max Breakdown Voltage600V
- Turn On Time1160 ns
- Test Condition480V, 7A, 1k Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 7A
- Gate Charge33nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C700ns/-
- Switching Energy3.5mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGD7NB60ST4 Description
The STGD7NB60ST4 is an N Channel 7A - 600V DPAK Power MESHTM IGBT.
STGD7NB60ST4 Features
High Input Impedance (Voltage Driven)
Very Low ON-Voltage Drop (VCESAT)
High Current Capability
Off Losses Include Tail Curren
Surface-Mounting DPAK (TO-252) Power Package in Tape & Reel
STGD7NB60ST4 Applications
Light Dimmer
Static Relays
Motor Control
The STGD7NB60ST4 is an N Channel 7A - 600V DPAK Power MESHTM IGBT.
STGD7NB60ST4 Features
High Input Impedance (Voltage Driven)
Very Low ON-Voltage Drop (VCESAT)
High Current Capability
Off Losses Include Tail Curren
Surface-Mounting DPAK (TO-252) Power Package in Tape & Reel
STGD7NB60ST4 Applications
Light Dimmer
Static Relays
Motor Control
STGD7NB60ST4 More Descriptions
Trans IGBT Chip N-CH 600V 15A 55000mW 3-Pin(2 Tab) DPAK T/R
STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp
Short-circuit rugged IGBT, DPAK, Tape and ReelSTMicroelectronics SCT
Igbt |Stmicroelectronics STGD7NB60ST4
STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp
Short-circuit rugged IGBT, DPAK, Tape and ReelSTMicroelectronics SCT
Igbt |Stmicroelectronics STGD7NB60ST4
The three parts on the right have similar specifications to STGD7NB60ST4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentContinuous Drain Current (ID)JEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRadiation HardeningRoHS StatusLead FreeTerminal FinishReach Compliance CodePower - MaxReverse Recovery TimeWeightTurn On Delay TimeRise TimeTurn-Off Delay TimeContinuous Collector CurrentTurn Off Time-Nom (toff)HeightLengthWidthQualification StatusView Compare
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STGD7NB60ST4ACTIVE (Last Updated: 7 months ago)8 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)PowerMESH™e3Active1 (Unlimited)2EAR99Insulated Gate BIP Transistors600V55WGULL WING2607A30STGD73R-PSSO-G21Single55WCOLLECTORStandardMOTOR CONTROL600VN-CHANNEL600V15A7ATO-252AA600V1.6V600V1160 ns480V, 7A, 1k Ω, 15V1.6V @ 15V, 7A33nC60A700ns/-3.5mJ (off)20V5VNoROHS3 CompliantLead Free---------------
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ACTIVE (Last Updated: 7 months ago)8 Weeks-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~150°C TJCut Tape (CT)Automotive, AEC-Q101e3Active1 (Unlimited)-EAR99Insulated Gate BIP Transistors-62.5W-NOT SPECIFIED-NOT SPECIFIEDSTGD10------Standard--N-CHANNEL2.75V18A--600V-600V-400V, 5A, 10 Ω, 15V2.75V @ 15V, 5A23nC30A9.5ns/87ns45μJ (on), 105μJ (off)20V6.5V-ROHS3 Compliant-Matte Tin (Sn) - annealednot_compliant62.5W50 ns----------
-
ACTIVE (Last Updated: 8 months ago)8 Weeks-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)PowerMESH™e3Active1 (Unlimited)2EAR99Insulated Gate BIP Transistors600V70WGULL WING2607A30STGD73R-PSSO-G21Single70W-StandardPOWER CONTROL-N-CHANNEL600V25A-TO-252AA600V2.5V600V25.5 ns390V, 7A, 10 Ω, 15V2.5V @ 15V, 7A35nC50A18.5ns/72ns95μJ (on), 115μJ (off)20V5.75VNoROHS3 CompliantLead FreeMatte Tin (Sn) - annealed---3.949996g18.5 ns8.5ns116 ns14A221 ns2.4mm6.6mm6.2mm-
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---Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)PowerMESH™e3Obsolete1 (Unlimited)2EAR99Insulated Gate BIP Transistors-62WGULL WING260-NOT SPECIFIEDSTGD103R-PSSO-G21Single-COLLECTORStandardPOWER CONTROL-N-CHANNEL600V20A-TO-252AA600V-600V19 ns390V, 5A, 10 Ω, 15V2.5V @ 15V, 5A19.2nC30A14.2ns/72ns31.8μJ (on), 95μJ (off)20V5.75V-ROHS3 Compliant-Matte Tin (Sn) - annealednot_compliant62W22 ns-----247 ns---Not Qualified
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