STMicroelectronics STGD6NC60HDT4
- Part Number:
- STGD6NC60HDT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3072030-STGD6NC60HDT4
- Description:
- IGBT 600V 15A 56W DPAK
- ECAD Model:
-
- Datasheet:
- STGD6NC60HD ~
STMicroelectronics STGD6NC60HDT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD6NC60HDT4.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight350.003213mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTGD6
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation50W
- Input TypeStandard
- Turn On Delay Time12 ns
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time40 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current15A
- Reverse Recovery Time21 ns
- JEDEC-95 CodeTO-252AA
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.9V
- Max Breakdown Voltage600V
- Turn On Time17.3 ns
- Test Condition390V, 3A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 3A
- Continuous Collector Current6A
- Turn Off Time-Nom (toff)222 ns
- Gate Charge13.6nC
- Current - Collector Pulsed (Icm)21A
- Td (on/off) @ 25°C12ns/76ns
- Switching Energy20μJ (on), 68μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height2.4mm
- Length6.6mm
- Width6.2mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The STMicroelectronics Transistors - IGBTs - Single STGD6NC60HDT4 is a 600V 15A 56W DPAK IGBT. It is a high-voltage, high-speed, low-loss, low-noise, and low-cost power transistor. It is designed for use in a wide range of applications, including motor control, power conversion, and power switching.
Features
• 600V voltage rating
• 15A current rating
• 56W power rating
• Low-loss and low-noise operation
• Low-cost
• High-speed switching
• High-voltage operation
• High-temperature operation
• RoHS compliant
Application
The STMicroelectronics Transistors - IGBTs - Single STGD6NC60HDT4 is suitable for use in a wide range of applications, including motor control, power conversion, and power switching. It is ideal for use in automotive, industrial, and consumer applications. It is also suitable for use in high-power applications, such as solar inverters, UPS systems, and motor drives.
The STMicroelectronics Transistors - IGBTs - Single STGD6NC60HDT4 is a 600V 15A 56W DPAK IGBT. It is a high-voltage, high-speed, low-loss, low-noise, and low-cost power transistor. It is designed for use in a wide range of applications, including motor control, power conversion, and power switching.
Features
• 600V voltage rating
• 15A current rating
• 56W power rating
• Low-loss and low-noise operation
• Low-cost
• High-speed switching
• High-voltage operation
• High-temperature operation
• RoHS compliant
Application
The STMicroelectronics Transistors - IGBTs - Single STGD6NC60HDT4 is suitable for use in a wide range of applications, including motor control, power conversion, and power switching. It is ideal for use in automotive, industrial, and consumer applications. It is also suitable for use in high-power applications, such as solar inverters, UPS systems, and motor drives.
STGD6NC60HDT4 More Descriptions
Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2 Tab) DPAK T/R
N-channel 600 V, 7 A very fast IGBT
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
Short-circuit rugged IGBT, DPAK, Tape and ReelSTMicroelectronics SCT
56W 15A 600V TO-252-2(DPAK) IGBTs ROHS
Igbt |Stmicroelectronics STGD6NC60HDT4
IGBT Transistors PowerMESH" IGBT
IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
N-channel 600 V, 7 A very fast IGBT
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
Short-circuit rugged IGBT, DPAK, Tape and ReelSTMicroelectronics SCT
56W 15A 600V TO-252-2(DPAK) IGBTs ROHS
Igbt |Stmicroelectronics STGD6NC60HDT4
IGBT Transistors PowerMESH" IGBT
IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
The three parts on the right have similar specifications to STGD6NC60HDT4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationInput TypeTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcContinuous Collector CurrentTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeReach Compliance CodePower - MaxAdditional FeatureCase ConnectionREACH SVHCView Compare
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STGD6NC60HDT4ACTIVE (Last Updated: 8 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633350.003213mgSILICON-55°C~150°C TJTape & Reel (TR)PowerMESH™e3Active1 (Unlimited)2EAR99Tin (Sn)Insulated Gate BIP Transistors600V56WGULL WING26015A30STGD63R-PSSO-G21Single50WStandard12 nsPOWER CONTROLN-CHANNEL40 ns600V15A21 nsTO-252AA600V1.9V600V17.3 ns390V, 3A, 10 Ω, 15V2.5V @ 15V, 3A6A222 ns13.6nC21A12ns/76ns20μJ (on), 68μJ (off)20V5.75V2.4mm6.6mm6.2mmNoROHS3 CompliantLead Free------ -
ACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJCut Tape (CT)Automotive, AEC-Q101e3Active1 (Unlimited)-EAR99Matte Tin (Sn) - annealedInsulated Gate BIP Transistors-62.5W-NOT SPECIFIED-NOT SPECIFIEDSTGD10-----Standard--N-CHANNEL-2.75V18A50 ns-600V-600V-400V, 5A, 10 Ω, 15V2.75V @ 15V, 5A--23nC30A9.5ns/87ns45μJ (on), 105μJ (off)20V6.5V----ROHS3 Compliant-not_compliant62.5W---
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ACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633350.003213mgSILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, PowerMESH™e3Active1 (Unlimited)2EAR99Matte Tin (Sn)Insulated Gate BIP Transistors-125WGULL WING260-30STGD183R-PSSO-G21Single-Logic650 msAUTOMOTIVE IGNITIONN-CHANNEL13.5 s360V25A--420V1.35V420V4450 ns300V, 10A, 5V1.7V @ 4.5V, 10A-22200 ns29nC40A650ns/13.5μs-16V-2.4mm6.6mm6.2mmNoROHS3 CompliantLead Free-125WVOLTAGE CLAMPINGCOLLECTORNo SVHC
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ACTIVE (Last Updated: 7 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633---55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101-Active1 (Unlimited)-EAR99---125W-NOT SPECIFIED-NOT SPECIFIEDSTGD19---Single-Logic----1.5V25A--390V-390V-300V, 10A, 1k Ω, 5V1.5V @ 4.5V, 10A--17nC40A650ns/13.5μs---2.4mm6.6mm6.2mm-ROHS3 CompliantLead Free-125W---
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