STMicroelectronics STGD10NC60HT4

Name: STGD10NC60HT4
Brand: STMicroelectronics
SKU: 3587322-STGD10NC60HT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGD10NC60HT4

Manufacturer:: STMicroelectronics

Ventron No:: 3587322-STGD10NC60HT4

Description:: IGBT 600V 20A 60W DPAK

ECAD Model:

Datasheet:: STGD10NC60HT4

Specifications

STMicroelectronics STGD10NC60HT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGD10NC60HT4.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
60W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Base Part Number
STGD10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
60W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
20A
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
19 ns
Test Condition
390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 5A
Turn Off Time-Nom (toff)
247 ns
Gate Charge
19.2nC
Td (on/off) @ 25°C
14.2ns/72ns
Switching Energy
31.8μJ (on), 95μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGD10NC60HT4 Description
STMicroelectronics has designed an innovative family of IGBTs, STGD10NC60HT4, with remarkable performance using the latest high voltage technology based on a proprietary strip arrangement. The suffix "H" designates a family that has been tuned for high frequency applications in order to provide very high switching performance (low voltage drop) while maintaining a low tfall.

STGD10NC60HT4 Features
Low dip in on-voltage (Vcesat) No cross-conduction susceptibility (low CRES / CIES ratio)

STGD10NC60HT4 Applications
Controls for high-frequency motors In both hard switch and resonant topologies, SMPS and PFC are used. Drivers of automobiles

STGD10NC60HT4 More Descriptions

N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT
Trans IGBT Chip N-CH 600V 20A 3-Pin(2 Tab) DPAK T/R
Igbt, 600V, 20A, To-252 Type A2 Rohs Compliant: Yes
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors N Ch 10A 600V

Product Comparison

The three parts on the right have similar specifications to STGD10NC60HT4.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Reverse Recovery Time

Current - Collector Pulsed (Icm)

Weight

Additional Feature

Case Connection

Turn On Delay Time

Turn-Off Delay Time

Collector Emitter Saturation Voltage

Height

Length

Width

REACH SVHC

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

JEDEC-95 Code

Continuous Collector Current

View Compare
STGD10NC60HT4

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

Insulated Gate BIP Transistors

60W

GULL WING

260

STGD10

3

R-PSSO-G2

1

Single

Standard

60W

POWER CONTROL

N-CHANNEL

600V

20A

600V

600V

19 ns

390V, 5A, 10 Ω, 15V

2.5V @ 15V, 5A

247 ns

19.2nC

14.2ns/72ns

31.8μJ (on), 95μJ (off)

20V

5.75V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGD10HF60KD

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Cut Tape (CT)

Automotive, AEC-Q101

e3

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn) - annealed

Insulated Gate BIP Transistors

62.5W

-

NOT SPECIFIED

STGD10

-

-

-

-

Standard

62.5W

-

N-CHANNEL

2.75V

18A

600V

600V

-

400V, 5A, 10 Ω, 15V

2.75V @ 15V, 5A

-

23nC

9.5ns/87ns

45μJ (on), 105μJ (off)

20V

6.5V

-

ROHS3 Compliant

-

not_compliant

NOT SPECIFIED

50 ns

30A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGD10NC60HT4 vs STGD10HF60KD
STGD18N40LZT4

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, PowerMESH™

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

Insulated Gate BIP Transistors

125W

GULL WING

260

STGD18

3

R-PSSO-G2

1

Single

Logic

125W

AUTOMOTIVE IGNITION

N-CHANNEL

360V

25A

420V

420V

4450 ns

300V, 10A, 5V

1.7V @ 4.5V, 10A

22200 ns

29nC

650ns/13.5μs

-

16V

-

No

ROHS3 Compliant

Lead Free

-

30

-

40A

350.003213mg

VOLTAGE CLAMPING

COLLECTOR

650 ms

13.5 s

1.35V

2.4mm

6.6mm

6.2mm

No SVHC

-

-

-

-

-

-

STGD10NC60HT4 vs STGD18N40LZT4
STGD7NC60HT4

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

Insulated Gate BIP Transistors

70W

GULL WING

260

STGD7

3

R-PSSO-G2

1

Single

Standard

-

POWER CONTROL

N-CHANNEL

600V

25A

600V

600V

25.5 ns

390V, 7A, 10 Ω, 15V

2.5V @ 15V, 7A

221 ns

35nC

18.5ns/72ns

95μJ (on), 115μJ (off)

20V

5.75V

No

ROHS3 Compliant

Lead Free

-

30

-

50A

3.949996g

-

-

18.5 ns

116 ns

2.5V

2.4mm

6.6mm

6.2mm

-

600V

7A

70W

8.5ns

TO-252AA

14A

STGD10NC60HT4 vs STGD7NC60HT4