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SI4599DY-T1-GE3

Vishay Siliconix SI4599DY-T1-GE3

Part Number:
SI4599DY-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2847542-SI4599DY-T1-GE3
Description:
MOSFET N/P-CH 40V 6.8A 8SOIC
ECAD Model:
Datasheet:
SI4599DY-T1-GE3

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Specifications
Vishay Siliconix SI4599DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4599DY-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    540.001716mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    45mOhm
  • Max Power Dissipation
    3.1W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SI4599
  • Pin Count
    8
  • Number of Elements
    2
  • Number of Channels
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Turn On Delay Time
    44 ns
  • Power - Max
    3W 3.1W
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    35.5m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    6.8A 5.8A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    33ns
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    6.8A
  • Threshold Voltage
    1.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5.6A
  • Drain to Source Breakdown Voltage
    40V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4599DY-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4599DY-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4599DY-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4599DY-T1-GE3 More Descriptions
VISHAY - SI4599DY-T1-GE3 - Dual MOSFET, N and P Channel, 6.8 A, 40 V, 0.0295 ohm, 10 V, 1.4 V
Trans MOSFET N/P-CH 40V 6.8A/5.8A 8-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 6.8A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Product Comparison
The three parts on the right have similar specifications to SI4599DY-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Pbfree Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Current Rating
    Nominal Vgs
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Max Junction Temperature (Tj)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI4599DY-T1-GE3
    SI4599DY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    540.001716mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    45mOhm
    3.1W
    DUAL
    GULL WING
    260
    40
    SI4599
    8
    2
    2
    ENHANCEMENT MODE
    3W
    44 ns
    3W 3.1W
    N and P-Channel
    SWITCHING
    35.5m Ω @ 5A, 10V
    3V @ 250μA
    640pF @ 20V
    6.8A 5.8A
    20nC @ 10V
    33ns
    N-CHANNEL AND P-CHANNEL
    13 ns
    30 ns
    6.8A
    1.4V
    20V
    5.6A
    40V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4532DY
    SI4532DY
    Fairchild/ON Semiconductor
    8 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    230.4mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    65MOhm
    2W
    DUAL
    GULL WING
    -
    -
    SI4532D
    -
    2
    -
    ENHANCEMENT MODE
    2W
    18 ns
    900mW
    N and P-Channel
    SWITCHING
    65m Ω @ 3.9A, 10V
    3V @ 250μA
    235pF @ 10V
    3.9A 3.5A
    15nC @ 10V
    8ns
    N-CHANNEL AND P-CHANNEL
    6 ns
    18 ns
    3.9A
    3V
    20V
    -
    30V
    METAL-OXIDE SEMICONDUCTOR
    Standard
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 16 hours ago)
    yes
    Tin (Sn)
    Other Transistors
    30V
    3.9A
    3 V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SI4599DY-T1-GE3 vs SI4532DY
  • SI4564DY-T1-GE3
    SI4564DY-T1-GE3
    Vishay Siliconix
    14 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2010
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    21mOhm
    3.2W
    DUAL
    GULL WING
    260
    40
    SI4564
    8
    2
    2
    ENHANCEMENT MODE
    2W
    42 ns
    3.1W 3.2W
    N and P-Channel
    SWITCHING
    17.5m Ω @ 8A, 10V
    2V @ 250μA
    855pF @ 20V
    10A 9.2A
    31nC @ 10V
    40ns
    N-CHANNEL AND P-CHANNEL
    15 ns
    40 ns
    10A
    800mV
    20V
    8A
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.75mm
    -
    -
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    yes
    Matte Tin (Sn)
    Other Transistors
    -
    -
    800 mV
    40V
    40V
    150°C
    -
    -
    -
    -
    -
    -
    SI4599DY-T1-GE3 vs SI4564DY-T1-GE3
  • SI4561DY-T1-E3
    SI4561DY-T1-E3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    3.3W
    -
    -
    -
    -
    SI4561
    -
    2
    2
    -
    2W
    49 ns
    3W 3.3W
    N and P-Channel
    -
    35.5mOhm @ 5A, 10V
    3V @ 250μA
    640pF @ 20V
    6.8A 7.2A
    20nC @ 10V
    79ns
    -
    14 ns
    36 ns
    5.6A
    -
    20V
    -
    40V
    -
    Logic Level Gate
    1.55mm
    5mm
    4mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    40V
    -
    -
    8-SO
    150°C
    -55°C
    640pF
    35mOhm
    35.5 mΩ
    SI4599DY-T1-GE3 vs SI4561DY-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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