Vishay Siliconix SI4567DY-T1-E3
- Part Number:
- SI4567DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3585798-SI4567DY-T1-E3
- Description:
- MOSFET N/P-CH 40V 5A 8-SOIC
- ECAD Model:
-
- Datasheet:
- SI4567DY-T1-E3
Vishay Siliconix SI4567DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4567DY-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance60mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation1.95W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSI4567
- Pin Count8
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.75W
- Power - Max2.75W 2.95W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs60m Ω @ 4.1A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds355pF @ 20V
- Current - Continuous Drain (Id) @ 25°C5A 4.4A
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time93ns
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)93 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)3.6A
- Threshold Voltage2.2V
- Gate to Source Voltage (Vgs)16V
- Drain Current-Max (Abs) (ID)4.1A
- Drain to Source Breakdown Voltage40V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Nominal Vgs2.2 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4567DY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4567DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4567DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4567DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4567DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4567DY-T1-E3 More Descriptions
MOSFET N/P-CH 40V 5A 8-SOIC / Trans MOSFET N/P-CH 40V 4.1A/3.6A 8-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N/P, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):48mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.75W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel:5A; Cont Current Id P Channel:4.4A; Current Id Max:5A; Junction Temperature Tj Min:150°C; On State Resistance @ Vgs = 10V N Channel:60mohm; On State Resistance @ Vgs = 10V P Channel:85mohm; On State Resistance @ Vgs = 4.5V N Channel:70mohm; On State Resistance @ Vgs = 4.5V P Channel:122mohm; Package / Case:SO-8; Power Dissipation N Channel 2:2.75W; Power Dissipation P Channel 2:2.95W; Power Dissipation Pd:2.75W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th N Channel 1 Min:0.8V; Voltage Vgs th P Channel Max:2.2V; Voltage Vgs th P Channel Min:0.8V
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N/P, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):48mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.75W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel:5A; Cont Current Id P Channel:4.4A; Current Id Max:5A; Junction Temperature Tj Min:150°C; On State Resistance @ Vgs = 10V N Channel:60mohm; On State Resistance @ Vgs = 10V P Channel:85mohm; On State Resistance @ Vgs = 4.5V N Channel:70mohm; On State Resistance @ Vgs = 4.5V P Channel:122mohm; Package / Case:SO-8; Power Dissipation N Channel 2:2.75W; Power Dissipation P Channel 2:2.95W; Power Dissipation Pd:2.75W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th N Channel 1 Min:0.8V; Voltage Vgs th P Channel Max:2.2V; Voltage Vgs th P Channel Min:0.8V
The three parts on the right have similar specifications to SI4567DY-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationPower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingWeightPublishedTerminal PositionQualification StatusConfigurationNumber of ChannelsTurn On Delay TimeDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinFactory Lead TimeMax Junction Temperature (Tj)Pulsed Drain Current-Max (IDM)View Compare
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SI4567DY-T1-E3Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesObsolete1 (Unlimited)8EAR9960mOhmMatte Tin (Sn)Other Transistors1.95WGULL WING26040SI456782DualENHANCEMENT MODE2.75W2.75W 2.95WN and P-ChannelSWITCHING60m Ω @ 4.1A, 10V2.2V @ 250μA355pF @ 20V5A 4.4A12nC @ 10V93nsN-CHANNEL AND P-CHANNEL93 ns19 ns3.6A2.2V16V4.1A40VMETAL-OXIDE SEMICONDUCTORStandard2.2 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-------------- -
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3-Obsolete1 (Unlimited)8EAR9925mOhm--2WGULL WING26040SI456382-ENHANCEMENT MODE2W3.25WN and P-ChannelSWITCHING16m Ω @ 5A, 10V2V @ 250μA2390pF @ 20V-85nC @ 10V93nsN-CHANNEL AND P-CHANNEL69 ns80 ns8A2V16V8A-METAL-OXIDE SEMICONDUCTORStandard-1.55mm5mm4mmUnknown-ROHS3 CompliantLead FreeTin186.993455mg2011DUALNot QualifiedSINGLE WITH BUILT-IN DIODE233 ns40V40V---
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesActive1 (Unlimited)8EAR9921mOhmMatte Tin (Sn)Other Transistors3.2WGULL WING26040SI456482-ENHANCEMENT MODE2W3.1W 3.2WN and P-ChannelSWITCHING17.5m Ω @ 8A, 10V2V @ 250μA855pF @ 20V10A 9.2A31nC @ 10V40nsN-CHANNEL AND P-CHANNEL15 ns40 ns10A800mV20V8A-METAL-OXIDE SEMICONDUCTORLogic Level Gate800 mV1.75mm--UnknownNoROHS3 CompliantLead Free-506.605978mg2010DUAL--242 ns40V40V14 Weeks150°C-
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesObsolete1 (Unlimited)8EAR9925mOhmMatte Tin (Sn)Other Transistors2WGULL WING26030SI454282DualENHANCEMENT MODE2W-N and P-Channel-25m Ω @ 6.9A, 10V1V @ 250μA (Min)--50nC @ 10V10nsN-CHANNEL AND P-CHANNEL25 ns55 ns5.7A-20V6.9A30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-----NoROHS3 CompliantLead Free--2014---------40A
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