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SI4565ADY-T1-E3

Vishay Siliconix SI4565ADY-T1-E3

Part Number:
SI4565ADY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2847801-SI4565ADY-T1-E3
Description:
MOSFET N/P-CH 40V 6.6A 8-SOIC
ECAD Model:
Datasheet:
SI4565ADY-T1-E3

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Specifications
Vishay Siliconix SI4565ADY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4565ADY-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Supplier Device Package
    8-SO
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    39mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    2W
  • Base Part Number
    SI4565
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Power Dissipation
    2W
  • Turn On Delay Time
    21 ns
  • Power - Max
    3.1W
  • FET Type
    N and P-Channel
  • Rds On (Max) @ Id, Vgs
    39mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    625pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    6.6A 5.6A
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    90ns
  • Drain to Source Voltage (Vdss)
    40V
  • Fall Time (Typ)
    56 ns
  • Turn-Off Delay Time
    44 ns
  • Continuous Drain Current (ID)
    4.5A
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    40V
  • Input Capacitance
    625pF
  • FET Feature
    Standard
  • Drain to Source Resistance
    54mOhm
  • Rds On Max
    39 mΩ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4565ADY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4565ADY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4565ADY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4565ADY-T1-E3 More Descriptions
MOSFET N/P-CH 40V 6.6A 8-SOIC
N- AND P- CHANNEL 40-V (D-S) MOSFET
Dual MOSFETs 40/-40V 6.6/9.0A
MOSFET, N/P, SO-8; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:40V; On State Resistance:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Case Style:SO-8; Termination Type:SMD; Current, Id Cont N Channel:5.2A; Current, Id Cont P Channel:4.5A; Min Junction Temperature, Tj:150°C; On State Resistance @ Vgs = 10V N Channel:0.04ohm; On State Resistance @ Vgs = 10V P Channel:0.054ohm; On State Resistance @ Vgs = 4.5V N Channel:0.045ohm; On State Resistance @ Vgs = 4.5V P Channel:0.072ohm; Power Dissipation N Channel 2:1.1W; Power Dissipation P Channel 2:1.1W; Voltage, Vgs th N Channel 1 min:0.6V; Voltage, Vgs th P Channel Max:2.2V; Voltage, Vgs th P Channel Min:0.8V
Product Comparison
The three parts on the right have similar specifications to SI4565ADY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    FET Feature
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Lead Free
    Contact Plating
    Weight
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Number of Channels
    Operating Mode
    Transistor Application
    Polarity/Channel Type
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    FET Technology
    Height
    Length
    Width
    REACH SVHC
    Lifecycle Status
    Factory Lead Time
    Pbfree Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Current Rating
    Nominal Vgs
    Radiation Hardening
    View Compare
  • SI4565ADY-T1-E3
    SI4565ADY-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    Obsolete
    1 (Unlimited)
    39mOhm
    150°C
    -55°C
    2W
    SI4565
    2
    Dual
    2W
    21 ns
    3.1W
    N and P-Channel
    39mOhm @ 5A, 10V
    2.2V @ 250μA
    625pF @ 20V
    6.6A 5.6A
    22nC @ 10V
    90ns
    40V
    56 ns
    44 ns
    4.5A
    16V
    40V
    625pF
    Standard
    54mOhm
    39 mΩ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4563DY-T1-E3
    SI4563DY-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    Obsolete
    1 (Unlimited)
    25mOhm
    -
    -
    2W
    SI4563
    2
    -
    2W
    33 ns
    3.25W
    N and P-Channel
    16m Ω @ 5A, 10V
    2V @ 250μA
    2390pF @ 20V
    -
    85nC @ 10V
    93ns
    40V
    69 ns
    80 ns
    8A
    16V
    -
    -
    Standard
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin
    186.993455mg
    SILICON
    e3
    8
    EAR99
    DUAL
    GULL WING
    260
    40
    8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    2
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    2V
    8A
    40V
    METAL-OXIDE SEMICONDUCTOR
    1.55mm
    5mm
    4mm
    Unknown
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SI4565ADY-T1-E3 vs SI4563DY-T1-E3
  • SI4532DY
    SI4532DY
    Fairchild/ON Semiconductor
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    Active
    1 (Unlimited)
    65MOhm
    -
    -
    2W
    SI4532D
    2
    -
    2W
    18 ns
    900mW
    N and P-Channel
    65m Ω @ 3.9A, 10V
    3V @ 250μA
    235pF @ 10V
    3.9A 3.5A
    15nC @ 10V
    8ns
    -
    6 ns
    18 ns
    3.9A
    20V
    30V
    -
    Standard
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    230.4mg
    SILICON
    e3
    8
    EAR99
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    3V
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    1.5mm
    5mm
    4mm
    No SVHC
    ACTIVE (Last Updated: 16 hours ago)
    8 Weeks
    yes
    Tin (Sn)
    Other Transistors
    30V
    3.9A
    3 V
    No
    SI4565ADY-T1-E3 vs SI4532DY
  • SI4599DY-T1-GE3
    SI4599DY-T1-GE3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    Active
    1 (Unlimited)
    45mOhm
    -
    -
    3.1W
    SI4599
    2
    -
    3W
    44 ns
    3W 3.1W
    N and P-Channel
    35.5m Ω @ 5A, 10V
    3V @ 250μA
    640pF @ 20V
    6.8A 5.8A
    20nC @ 10V
    33ns
    -
    13 ns
    30 ns
    6.8A
    20V
    40V
    -
    Logic Level Gate
    -
    -
    ROHS3 Compliant
    Lead Free
    Tin
    540.001716mg
    SILICON
    e3
    8
    EAR99
    DUAL
    GULL WING
    260
    40
    8
    -
    -
    2
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    1.4V
    5.6A
    -
    METAL-OXIDE SEMICONDUCTOR
    1.55mm
    5mm
    4mm
    Unknown
    -
    14 Weeks
    -
    -
    -
    -
    -
    -
    No
    SI4565ADY-T1-E3 vs SI4599DY-T1-GE3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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