Vishay Siliconix SI4501BDY-T1-GE3

Name: SI4501BDY-T1-GE3
Brand: Vishay Siliconix
SKU: 3069714-SI4501BDY-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4501BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 3069714-SI4501BDY-T1-GE3

Description:: MOSFET N/P-CH 30V/8V 8SOIC

ECAD Model:

Datasheet:: SI4501BDY-T1-GE3

Specifications

Vishay Siliconix SI4501BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4501BDY-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SOIC
Weight
540.001716mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.5W
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Turn On Delay Time
6 ns
Power - Max
4.5W 3.1W
FET Type
N and P-Channel, Common Drain
Rds On (Max) @ Id, Vgs
17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
805pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12A 8A
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
30V 8V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
800mV
Gate to Source Voltage (Vgs)
8V
Input Capacitance
805pF
FET Feature
Logic Level Gate
Drain to Source Resistance
21mOhm
Rds On Max
17 mΩ
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

SI4501BDY-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4501BDY-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4501BDY-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI4501BDY-T1-GE3 More Descriptions

Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
SI4501BDY-T1-GE3 Dual N/P-channel MOSFET Transistor,6.4 A,12 A,8V,30V,8-Pin SOIC | Siliconix / Vishay SI4501BDY-T1-GE3
MOSFET, NP CH, W/D, 30V/8V, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:4.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:12A; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-8V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.0135ohm; On Resistance Rds(on), P Channel:0.021ohm; Operating Temperature Range:-55°C to 150°C; Power Dissipation Pd:4.5W

Product Comparison

The three parts on the right have similar specifications to SI4501BDY-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Number of Elements

Number of Channels

Element Configuration

Turn On Delay Time

Power - Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Input Capacitance

FET Feature

Drain to Source Resistance

Rds On Max

REACH SVHC

RoHS Status

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Resistance

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Configuration

Operating Mode

Power Dissipation

Transistor Application

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

FET Technology

Height

Length

Width

Lead Free

Lifecycle Status

Pbfree Code

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Drain to Source Breakdown Voltage

Nominal Vgs

Radiation Hardening

Pulsed Drain Current-Max (IDM)

View Compare
SI4501BDY-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SOIC

540.001716mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Active

1 (Unlimited)

150°C

-55°C

4.5W

2

2

Dual

6 ns

4.5W 3.1W

N and P-Channel, Common Drain

17mOhm @ 10A, 10V

2V @ 250μA

805pF @ 15V

12A 8A

25nC @ 10V

12ns

30V 8V

9 ns

35 ns

12A

800mV

8V

805pF

Logic Level Gate

21mOhm

17 mΩ

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4563DY-T1-E3

Vishay Siliconix

-

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

Obsolete

1 (Unlimited)

-

-

2W

2

2

-

33 ns

3.25W

N and P-Channel

16m Ω @ 5A, 10V

2V @ 250μA

2390pF @ 20V

-

85nC @ 10V

93ns

40V

69 ns

80 ns

8A

2V

16V

-

Standard

-

-

Unknown

ROHS3 Compliant

SILICON

e3

8

EAR99

25mOhm

DUAL

GULL WING

260

40

SI4563

8

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

2W

SWITCHING

N-CHANNEL AND P-CHANNEL

8A

40V

METAL-OXIDE SEMICONDUCTOR

1.55mm

5mm

4mm

Lead Free

-

-

-

-

-

-

-

-

-

-

SI4501BDY-T1-GE3 vs SI4563DY-T1-E3
SI4532DY

Fairchild/ON Semiconductor

8 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

230.4mg

-55°C~150°C TJ

Tape & Reel (TR)

-

2017

Active

1 (Unlimited)

-

-

2W

2

-

-

18 ns

900mW

N and P-Channel

65m Ω @ 3.9A, 10V

3V @ 250μA

235pF @ 10V

3.9A 3.5A

15nC @ 10V

8ns

-

6 ns

18 ns

3.9A

3V

20V

-

Standard

-

-

No SVHC

ROHS3 Compliant

SILICON

e3

8

EAR99

65MOhm

DUAL

GULL WING

-

-

SI4532D

-

-

-

ENHANCEMENT MODE

2W

SWITCHING

N-CHANNEL AND P-CHANNEL

-

-

METAL-OXIDE SEMICONDUCTOR

1.5mm

5mm

4mm

Lead Free

ACTIVE (Last Updated: 16 hours ago)

yes

Tin (Sn)

Other Transistors

30V

3.9A

30V

3 V

No

-

SI4501BDY-T1-GE3 vs SI4532DY
SI4542DY-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

Obsolete

1 (Unlimited)

-

-

2W

2

-

Dual

-

-

N and P-Channel

25m Ω @ 6.9A, 10V

1V @ 250μA (Min)

-

-

50nC @ 10V

10ns

-

25 ns

55 ns

5.7A

-

20V

-

Logic Level Gate

-

-

-

ROHS3 Compliant

SILICON

e3

8

EAR99

25mOhm

-

GULL WING

260

30

SI4542

8

-

-

ENHANCEMENT MODE

2W

-

N-CHANNEL AND P-CHANNEL

6.9A

-

METAL-OXIDE SEMICONDUCTOR

-

-

-

Lead Free

-

yes

Matte Tin (Sn)

Other Transistors

-

-

30V

-

No

40A

SI4501BDY-T1-GE3 vs SI4542DY-T1-E3