Fairchild/ON Semiconductor SI4532DY

Name: SI4532DY
Brand: Fairchild/ON Semiconductor
SKU: 2847618-SI4532DY
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4532DY

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847618-SI4532DY

Description:: MOSFET N/P-CH 30V 3.9A/3.5A 8-SO

ECAD Model:

Datasheet:: SI4532DY

Specifications

Fairchild/ON Semiconductor SI4532DY technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SI4532DY.

Lifecycle Status
ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
65MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
3.9A
Base Part Number
SI4532D
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
18 ns
Power - Max
900mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.9A 3.5A
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Rise Time
8ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
6 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
3.9A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Nominal Vgs
3 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4532DY Description These double N-channel and P-channel enhanced mode power field effect transistors are produced using on Semiconductor's PRPROPRORT, high cell density, and DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient. SI4532DY Features
N-Channel 3.9A, 30V.RDS(ON) = 0.065? @VGS = 10V RDS(ON) = 0.095? @VGS = 4.5V. P-Channel -3.5A,-30V.RDS(ON)= 0.085? @VGS = -10V RDS(ON)= 0.190 ? @VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package.
SI4532DY Applications
laptop power management other battery-powered circuits

SI4532DY More Descriptions

Dual N & P-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SOIC-8
Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R - Tape and Reel
Dual N & P Channel Enhancement Mode Field Effect Transistor
Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to SI4532DY.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Base Part Number

Number of Elements

Operating Mode

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Channels

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Max Junction Temperature (Tj)

Contact Plating

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
SI4532DY

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 16 hours ago)

8 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e3

yes

Active

1 (Unlimited)

8

EAR99

65MOhm

Tin (Sn)

Other Transistors

30V

2W

DUAL

GULL WING

3.9A

SI4532D

2

ENHANCEMENT MODE

2W

18 ns

900mW

N and P-Channel

SWITCHING

65m Ω @ 3.9A, 10V

3V @ 250μA

235pF @ 10V

3.9A 3.5A

15nC @ 10V

8ns

N-CHANNEL AND P-CHANNEL

6 ns

18 ns

3.9A

3V

20V

30V

METAL-OXIDE SEMICONDUCTOR

Standard

3 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4564DY-T1-GE3

Vishay Siliconix

-

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

yes

Active

1 (Unlimited)

8

EAR99

21mOhm

Matte Tin (Sn)

Other Transistors

-

3.2W

DUAL

GULL WING

-

SI4564

2

ENHANCEMENT MODE

2W

42 ns

3.1W 3.2W

N and P-Channel

SWITCHING

17.5m Ω @ 8A, 10V

2V @ 250μA

855pF @ 20V

10A 9.2A

31nC @ 10V

40ns

N-CHANNEL AND P-CHANNEL

15 ns

40 ns

10A

800mV

20V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

800 mV

1.75mm

-

-

Unknown

No

ROHS3 Compliant

Lead Free

TrenchFET®

260

40

8

2

40V

8A

40V

150°C

-

-

-

-

-

-

-

SI4532DY vs SI4564DY-T1-GE3
SI4599DY-T1-GE3

Vishay Siliconix

-

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

540.001716mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

-

Active

1 (Unlimited)

8

EAR99

45mOhm

-

-

-

3.1W

DUAL

GULL WING

-

SI4599

2

ENHANCEMENT MODE

3W

44 ns

3W 3.1W

N and P-Channel

SWITCHING

35.5m Ω @ 5A, 10V

3V @ 250μA

640pF @ 20V

6.8A 5.8A

20nC @ 10V

33ns

N-CHANNEL AND P-CHANNEL

13 ns

30 ns

6.8A

1.4V

20V

40V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

TrenchFET®

260

40

8

2

-

5.6A

-

-

Tin

-

-

-

-

-

-

SI4532DY vs SI4599DY-T1-GE3
SI4561DY-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

3.3W

-

-

-

SI4561

2

-

2W

49 ns

3W 3.3W

N and P-Channel

-

35.5mOhm @ 5A, 10V

3V @ 250μA

640pF @ 20V

6.8A 7.2A

20nC @ 10V

79ns

-

14 ns

36 ns

5.6A

-

20V

40V

-

Logic Level Gate

-

1.55mm

5mm

4mm

-

-

ROHS3 Compliant

-

TrenchFET®

-

-

-

2

40V

-

-

-

-

8-SO

150°C

-55°C

640pF

35mOhm

35.5 mΩ

SI4532DY vs SI4561DY-T1-E3