Vishay Siliconix SI4561DY-T1-E3

Name: SI4561DY-T1-E3
Brand: Vishay Siliconix
SKU: 2475592-SI4561DY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4561DY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2475592-SI4561DY-T1-E3

Description:: MOSFET N/P-CH 40V 6.8A 8-SOIC

ECAD Model:

Datasheet:: SI4561DY-T1-E3

Specifications

Vishay Siliconix SI4561DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4561DY-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Weight
186.993455mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Base Part Number
SI4561
Number of Elements
2
Number of Channels
2
Power Dissipation
2W
Turn On Delay Time
49 ns
Power - Max
3W 3.3W
FET Type
N and P-Channel
Rds On (Max) @ Id, Vgs
35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
640pF @ 20V
Current - Continuous Drain (Id) @ 25°C
6.8A 7.2A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
79ns
Drain to Source Voltage (Vdss)
40V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
5.6A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Input Capacitance
640pF
FET Feature
Logic Level Gate
Drain to Source Resistance
35mOhm
Rds On Max
35.5 mΩ
Height
1.55mm
Length
5mm
Width
4mm
RoHS Status
ROHS3 Compliant

Description

SI4561DY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4561DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4561DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI4561DY-T1-E3 More Descriptions

Power Field-Effect Transistor, 7.2A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET
MOSFET N/P-CH 40V 6.8A 8-SOIC
N- AND P- CHANNEL 40-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to SI4561DY-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Base Part Number

Number of Elements

Number of Channels

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

FET Feature

Drain to Source Resistance

Rds On Max

Height

Length

Width

RoHS Status

Lifecycle Status

Factory Lead Time

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Terminal Position

Terminal Form

Current Rating

Operating Mode

Transistor Application

Polarity/Channel Type

Threshold Voltage

FET Technology

Nominal Vgs

REACH SVHC

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Max Junction Temperature (Tj)

Contact Plating

View Compare
SI4561DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Obsolete

1 (Unlimited)

150°C

-55°C

3.3W

SI4561

2

2

2W

49 ns

3W 3.3W

N and P-Channel

35.5mOhm @ 5A, 10V

3V @ 250μA

640pF @ 20V

6.8A 7.2A

20nC @ 10V

79ns

40V

14 ns

36 ns

5.6A

20V

40V

640pF

Logic Level Gate

35mOhm

35.5 mΩ

1.55mm

5mm

4mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4532DY

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

230.4mg

-55°C~150°C TJ

Tape & Reel (TR)

-

2017

Active

1 (Unlimited)

-

-

2W

SI4532D

2

-

2W

18 ns

900mW

N and P-Channel

65m Ω @ 3.9A, 10V

3V @ 250μA

235pF @ 10V

3.9A 3.5A

15nC @ 10V

8ns

-

6 ns

18 ns

3.9A

20V

30V

-

Standard

-

-

1.5mm

5mm

4mm

ROHS3 Compliant

ACTIVE (Last Updated: 16 hours ago)

8 Weeks

SILICON

e3

yes

8

EAR99

65MOhm

Tin (Sn)

Other Transistors

30V

DUAL

GULL WING

3.9A

ENHANCEMENT MODE

SWITCHING

N-CHANNEL AND P-CHANNEL

3V

METAL-OXIDE SEMICONDUCTOR

3 V

No SVHC

No

Lead Free

-

-

-

-

-

-

-

SI4561DY-T1-E3 vs SI4532DY
SI4564DY-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

506.605978mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2010

Active

1 (Unlimited)

-

-

3.2W

SI4564

2

2

2W

42 ns

3.1W 3.2W

N and P-Channel

17.5m Ω @ 8A, 10V

2V @ 250μA

855pF @ 20V

10A 9.2A

31nC @ 10V

40ns

40V

15 ns

40 ns

10A

20V

-

-

Logic Level Gate

-

-

1.75mm

-

-

ROHS3 Compliant

-

14 Weeks

SILICON

e3

yes

8

EAR99

21mOhm

Matte Tin (Sn)

Other Transistors

-

DUAL

GULL WING

-

ENHANCEMENT MODE

SWITCHING

N-CHANNEL AND P-CHANNEL

800mV

METAL-OXIDE SEMICONDUCTOR

800 mV

Unknown

No

Lead Free

260

40

8

8A

40V

150°C

-

SI4561DY-T1-E3 vs SI4564DY-T1-GE3
SI4599DY-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

540.001716mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

Active

1 (Unlimited)

-

-

3.1W

SI4599

2

2

3W

44 ns

3W 3.1W

N and P-Channel

35.5m Ω @ 5A, 10V

3V @ 250μA

640pF @ 20V

6.8A 5.8A

20nC @ 10V

33ns

-

13 ns

30 ns

6.8A

20V

40V

-

Logic Level Gate

-

-

1.55mm

5mm

4mm

ROHS3 Compliant

-

14 Weeks

SILICON

e3

-

8

EAR99

45mOhm

-

-

-

DUAL

GULL WING

-

ENHANCEMENT MODE

SWITCHING

N-CHANNEL AND P-CHANNEL

1.4V

METAL-OXIDE SEMICONDUCTOR

-

Unknown

No

Lead Free

260

40

8

5.6A

-

-

Tin

SI4561DY-T1-E3 vs SI4599DY-T1-GE3