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SI4532ADY-T1-E3

Vishay Siliconix SI4532ADY-T1-E3

Part Number:
SI4532ADY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3069633-SI4532ADY-T1-E3
Description:
MOSFET N/P-CH 30V 3.7A 8-SOIC
ECAD Model:
Datasheet:
SI4532ADY-T1-E3

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Specifications
Vishay Siliconix SI4532ADY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4532ADY-T1-E3.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    80mOhm
  • Terminal Finish
    MATTE TIN
  • Max Power Dissipation
    1.2W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SI4532
  • Pin Count
    8
  • Number of Elements
    2
  • Number of Channels
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    8 ns
  • Power - Max
    1.13W 1.2W
  • FET Type
    N and P-Channel
  • Rds On (Max) @ Id, Vgs
    53m Ω @ 4.9A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA (Min)
  • Current - Continuous Drain (Id) @ 25°C
    3.7A 3A
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • Rise Time
    9ns
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    4.9A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    3.7A
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1 V
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4532ADY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4532ADY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4532ADY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4532ADY-T1-E3 More Descriptions
SI4532ADY-T1-E3 Dual N/P-channel MOSFET Transistor, 3 A, 3.7 A, 30 V, 8-Pin SOIC
Dual N & P Channel 30 V 0.053/0.08 Ohm Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 30V 3.7A/3A 8-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Product Comparison
The three parts on the right have similar specifications to SI4532ADY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Max Junction Temperature (Tj)
    Element Configuration
    Pulsed Drain Current-Max (IDM)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI4532ADY-T1-E3
    SI4532ADY-T1-E3
    Vishay Siliconix
    15 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    80mOhm
    MATTE TIN
    1.2W
    DUAL
    GULL WING
    260
    40
    SI4532
    8
    2
    2
    ENHANCEMENT MODE
    2W
    8 ns
    1.13W 1.2W
    N and P-Channel
    53m Ω @ 4.9A, 10V
    1V @ 250μA (Min)
    3.7A 3A
    16nC @ 10V
    9ns
    N-CHANNEL AND P-CHANNEL
    10 ns
    21 ns
    4.9A
    1V
    20V
    3.7A
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1 V
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4564DY-T1-GE3
    SI4564DY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    21mOhm
    Matte Tin (Sn)
    3.2W
    DUAL
    GULL WING
    260
    40
    SI4564
    8
    2
    2
    ENHANCEMENT MODE
    2W
    42 ns
    3.1W 3.2W
    N and P-Channel
    17.5m Ω @ 8A, 10V
    2V @ 250μA
    10A 9.2A
    31nC @ 10V
    40ns
    N-CHANNEL AND P-CHANNEL
    15 ns
    40 ns
    10A
    800mV
    20V
    8A
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    800 mV
    1.75mm
    -
    -
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    Other Transistors
    SWITCHING
    855pF @ 20V
    40V
    40V
    150°C
    -
    -
    -
    -
    -
    -
    -
    -
    SI4532ADY-T1-E3 vs SI4564DY-T1-GE3
  • SI4542DY-T1-E3
    SI4542DY-T1-E3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    25mOhm
    Matte Tin (Sn)
    2W
    -
    GULL WING
    260
    30
    SI4542
    8
    2
    -
    ENHANCEMENT MODE
    2W
    -
    -
    N and P-Channel
    25m Ω @ 6.9A, 10V
    1V @ 250μA (Min)
    -
    50nC @ 10V
    10ns
    N-CHANNEL AND P-CHANNEL
    25 ns
    55 ns
    5.7A
    -
    20V
    6.9A
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Other Transistors
    -
    -
    -
    -
    -
    Dual
    40A
    -
    -
    -
    -
    -
    -
    SI4532ADY-T1-E3 vs SI4542DY-T1-E3
  • SI4561DY-T1-E3
    SI4561DY-T1-E3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    3.3W
    -
    -
    -
    -
    SI4561
    -
    2
    2
    -
    2W
    49 ns
    3W 3.3W
    N and P-Channel
    35.5mOhm @ 5A, 10V
    3V @ 250μA
    6.8A 7.2A
    20nC @ 10V
    79ns
    -
    14 ns
    36 ns
    5.6A
    -
    20V
    -
    40V
    -
    Logic Level Gate
    -
    1.55mm
    5mm
    4mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    640pF @ 20V
    40V
    -
    -
    -
    -
    8-SO
    150°C
    -55°C
    640pF
    35mOhm
    35.5 mΩ
    SI4532ADY-T1-E3 vs SI4561DY-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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