Vishay Siliconix SI4542DY-T1-E3

Name: SI4542DY-T1-E3
Brand: Vishay Siliconix
SKU: 2475632-SI4542DY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4542DY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2475632-SI4542DY-T1-E3

Description:: MOSFET N/P-CH 30V 8-SOIC

ECAD Model:

Datasheet:: SI4542DY-T1-E3

Specifications

Vishay Siliconix SI4542DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4542DY-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
25mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
SI4542
Pin Count
8
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
N and P-Channel
Rds On (Max) @ Id, Vgs
25m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Rise Time
10ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
25 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
5.7A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6.9A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
40A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4542DY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4542DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4542DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI4542DY-T1-E3 More Descriptions

Trans MOSFET N/P-CH 30V 6.9A/6.1A 8-Pin SOIC N T/R
Dual MOSFETs 30V 6.9/6.1A 2W
MOSFET 30V 6.9/6.1A 2W
SO8-COMPLEMENTARY 30V
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to SI4542DY-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Weight

Terminal Position

Qualification Status

Configuration

Number of Channels

Turn On Delay Time

Power - Max

Transistor Application

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Threshold Voltage

DS Breakdown Voltage-Min

Height

Length

Width

REACH SVHC

Lifecycle Status

Factory Lead Time

Voltage - Rated DC

Current Rating

Current - Continuous Drain (Id) @ 25°C

Nominal Vgs

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
SI4542DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

25mOhm

Matte Tin (Sn)

Other Transistors

2W

GULL WING

260

30

SI4542

8

2

Dual

ENHANCEMENT MODE

2W

N and P-Channel

25m Ω @ 6.9A, 10V

1V @ 250μA (Min)

50nC @ 10V

10ns

N-CHANNEL AND P-CHANNEL

25 ns

55 ns

5.7A

20V

6.9A

30V

40A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4563DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

e3

-

Obsolete

1 (Unlimited)

8

EAR99

25mOhm

-

-

2W

GULL WING

260

40

SI4563

8

2

-

ENHANCEMENT MODE

2W

N and P-Channel

16m Ω @ 5A, 10V

2V @ 250μA

85nC @ 10V

93ns

N-CHANNEL AND P-CHANNEL

69 ns

80 ns

8A

16V

8A

-

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

ROHS3 Compliant

Lead Free

Tin

186.993455mg

DUAL

Not Qualified

SINGLE WITH BUILT-IN DIODE

2

33 ns

3.25W

SWITCHING

2390pF @ 20V

40V

2V

40V

1.55mm

5mm

4mm

Unknown

-

-

-

-

-

-

-

-

-

-

-

-

SI4542DY-T1-E3 vs SI4563DY-T1-E3
SI4532DY

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2017

e3

yes

Active

1 (Unlimited)

8

EAR99

65MOhm

Tin (Sn)

Other Transistors

2W

GULL WING

-

-

SI4532D

-

2

-

ENHANCEMENT MODE

2W

N and P-Channel

65m Ω @ 3.9A, 10V

3V @ 250μA

15nC @ 10V

8ns

N-CHANNEL AND P-CHANNEL

6 ns

18 ns

3.9A

20V

-

30V

-

METAL-OXIDE SEMICONDUCTOR

Standard

No

ROHS3 Compliant

Lead Free

-

230.4mg

DUAL

-

-

-

18 ns

900mW

SWITCHING

235pF @ 10V

-

3V

-

1.5mm

5mm

4mm

No SVHC

ACTIVE (Last Updated: 16 hours ago)

8 Weeks

30V

3.9A

3.9A 3.5A

3 V

-

-

-

-

-

-

SI4542DY-T1-E3 vs SI4532DY
SI4561DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

3.3W

-

-

-

SI4561

-

2

-

-

2W

N and P-Channel

35.5mOhm @ 5A, 10V

3V @ 250μA

20nC @ 10V

79ns

-

14 ns

36 ns

5.6A

20V

-

40V

-

-

Logic Level Gate

-

ROHS3 Compliant

-

-

186.993455mg

-

-

-

2

49 ns

3W 3.3W

-

640pF @ 20V

40V

-

-

1.55mm

5mm

4mm

-

-

-

-

-

6.8A 7.2A

-

8-SO

150°C

-55°C

640pF

35mOhm

35.5 mΩ

SI4542DY-T1-E3 vs SI4561DY-T1-E3