ON Semiconductor NVD5413NT4G
- Part Number:
- NVD5413NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490422-NVD5413NT4G
- Description:
- MOSFET N-CH 60V 30A DPAK
- Datasheet:
- NVD5413NT4G
ON Semiconductor NVD5413NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD5413NT4G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins4
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Pin Count4
- Power Dissipation-Max68W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1725pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)30A
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NVD5413NT4G Overview
A device's maximal input capacitance is 1725pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
NVD5413NT4G Features
a continuous drain current (ID) of 30A
a 60V drain to source voltage (Vdss)
NVD5413NT4G Applications
There are a lot of ON Semiconductor
NVD5413NT4G applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1725pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
NVD5413NT4G Features
a continuous drain current (ID) of 30A
a 60V drain to source voltage (Vdss)
NVD5413NT4G Applications
There are a lot of ON Semiconductor
NVD5413NT4G applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NVD5413NT4G More Descriptions
Power MOSFET 60V 30A 26 mOhm Single N−Channel DPAK
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2 Tab) DPAK T/R
RES SMD 11.8K OHM 1% 1/16W 0402
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2 Tab) DPAK T/R
RES SMD 11.8K OHM 1% 1/16W 0402
The three parts on the right have similar specifications to NVD5413NT4G.
-
ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Terminal FinishTechnologyPin CountPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusLead FreeFactory Lead TimeSurface MountTransistor Element MaterialOperating TemperatureSeriesNumber of TerminationsTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Drain to Source ResistanceView Compare
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NVD5413NT4GLAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-634Tape & Reel (TR)2008e3yesObsolete1 (Unlimited)Tin (Sn)MOSFET (Metal Oxide)468W TcN-Channel26m Ω @ 20A, 10V4V @ 250μA1725pF @ 25V30A Tc46nC @ 10V60V10V±20V30ARoHS CompliantLead Free---------------------
-
LAST SHIPMENTS (Last Updated: 4 days ago)------e3yesActive1 (Unlimited)Tin (Sn)-------------RoHS Compliant-4 Weeks-------------------
-
ACTIVE (Last Updated: 1 week ago)-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-Tape & Reel (TR)2012e3yesActive1 (Unlimited)Tin (Sn)MOSFET (Metal Oxide)-3.4W Ta 49W TcN-Channel64m Ω @ 9A, 10V2.5V @ 250μA365pF @ 25V5A Ta 17A Tc14nC @ 10V60V4.5V 10V±20V-ROHS3 Compliant-22 WeeksYESSILICON-55°C~175°C TJAutomotive, AEC-Q1012SINGLEGULL WINGnot_compliantR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN17A0.085Ohm71A60V41 mJ-
-
ACTIVE (Last Updated: 3 days ago)----Tape & Reel (TR)--yesActive1 (Unlimited)--------------ROHS3 Compliant-16 Weeks-------not_compliant----------2.9mOhm
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