ON Semiconductor NVD5407NT4G
- Part Number:
- NVD5407NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2850051-NVD5407NT4G
- Description:
- MOSFET N-CH 40V 7.6A DPAK
- ECAD Model:
-
- Datasheet:
- NVD5407NT4G
ON Semiconductor NVD5407NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD5407NT4G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Power Dissipation-Max2.9W Ta 75W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id3.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1000pF @ 32V
- Current - Continuous Drain (Id) @ 25°C7.6A Ta 38A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVD5407NT4G Overview
A device's maximum input capacitance is 1000pF @ 32V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
NVD5407NT4G Features
a 40V drain to source voltage (Vdss)
NVD5407NT4G Applications
There are a lot of ON Semiconductor
NVD5407NT4G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1000pF @ 32V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
NVD5407NT4G Features
a 40V drain to source voltage (Vdss)
NVD5407NT4G Applications
There are a lot of ON Semiconductor
NVD5407NT4G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
NVD5407NT4G More Descriptions
Single N-Channel Power MOSFET 40V, 38A, 26mΩ, Power MOSFET 40V, 38A, 26 mOhm, Single N-Channel, DPAK.
Trans MOSFET N-CH 40V 7.6A Automotive 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 38A I(D), 40V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
40V,26m锟斤拷,38A,Single N-Ch Power MOSFET
Trans MOSFET N-CH 40V 7.6A Automotive 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 38A I(D), 40V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
40V,26m锟斤拷,38A,Single N-Ch Power MOSFET
The three parts on the right have similar specifications to NVD5407NT4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)TechnologyReach Compliance CodePower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusLead FreeSeriesDrain to Source ResistanceView Compare
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NVD5407NT4GACTIVE (Last Updated: 2 days ago)4 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)2016yesActive1 (Unlimited)MOSFET (Metal Oxide)not_compliant2.9W Ta 75W TcN-Channel26m Ω @ 20A, 10V3.5V @ 250μA1000pF @ 32V7.6A Ta 38A Tc20nC @ 10V40V5V 10V±20VROHS3 CompliantLead Free--- -
ACTIVE, NOT REC (Last Updated: 4 days ago)4 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)-yesNot For New Designs1 (Unlimited)MOSFET (Metal Oxide)-3.9W Ta 100W TcN-Channel17m Ω @ 25A, 10V2.5V @ 250μA1410pF @ 25V10.7A Ta 54A Tc48nC @ 10V60V4.5V 10V±20VROHS3 Compliant-Automotive, AEC-Q101-
-
ACTIVE (Last Updated: 3 days ago)16 Weeks---Tape & Reel (TR)-yesActive1 (Unlimited)-not_compliant----------ROHS3 Compliant--2.9mOhm
-
ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)-yesActive1 (Unlimited)MOSFET (Metal Oxide)not_compliant18W TcN-Channel27.4m Ω @ 10A, 10V2.1V @ 250μA400pF @ 25V17A Tc3.4nC @ 4.5V60V4.5V 10V±16VROHS3 Compliant-Automotive, AEC-Q101-
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