ON Semiconductor NVD5C446NT4G
- Part Number:
- NVD5C446NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2484768-NVD5C446NT4G
- Description:
- T6 40V SL DPAK
- Datasheet:
- NVD5C446NT4G
ON Semiconductor NVD5C446NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD5C446NT4G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time16 Weeks
- PackagingTape & Reel (TR)
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Reach Compliance Codenot_compliant
- Drain to Source Resistance2.9mOhm
- RoHS StatusROHS3 Compliant
NVD5C446NT4G Overview
Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 2.9mOhm.
NVD5C446NT4G Features
single MOSFETs transistor is 2.9mOhm
NVD5C446NT4G Applications
There are a lot of ON Semiconductor
NVD5C446NT4G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 2.9mOhm.
NVD5C446NT4G Features
single MOSFETs transistor is 2.9mOhm
NVD5C446NT4G Applications
There are a lot of ON Semiconductor
NVD5C446NT4G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NVD5C446NT4G More Descriptions
Single N-Channel Power MOSFET 40V, 101A, 3.5mΩ DPAK 2500 tape and reel
Trans MOSFET N-CH 40V 22A Automotive 3-Pin(2 Tab) DPAK T/R
T6 40V Sl Dpak/Reel Rohs Compliant: Yes |Onsemi NVD5C446NT4G
Power Field-Effect Transistor, 101A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 101A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 101W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
MOSFET N-CHANNEL 40V 101A DPAK
MOS Power Transistors LV (=< 40V)
Trans MOSFET N-CH 40V 22A Automotive 3-Pin(2 Tab) DPAK T/R
T6 40V Sl Dpak/Reel Rohs Compliant: Yes |Onsemi NVD5C446NT4G
Power Field-Effect Transistor, 101A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 101A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 101W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
MOSFET N-CHANNEL 40V 101A DPAK
MOS Power Transistors LV (=< 40V)
The three parts on the right have similar specifications to NVD5C446NT4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Reach Compliance CodeDrain to Source ResistanceRoHS StatusMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodeNumber of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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NVD5C446NT4GACTIVE (Last Updated: 3 days ago)16 WeeksTape & Reel (TR)yesActive1 (Unlimited)not_compliant2.9mOhmROHS3 Compliant----------------------------------
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ACTIVE (Last Updated: 1 week ago)22 WeeksTape & Reel (TR)yesActive1 (Unlimited)not_compliant-ROHS3 CompliantSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJAutomotive, AEC-Q1012012e32Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODE3.4W Ta 49W TcENHANCEMENT MODEDRAINN-Channel64m Ω @ 9A, 10V2.5V @ 250μA365pF @ 25V5A Ta 17A Tc14nC @ 10V60V4.5V 10V±20V17A0.085Ohm71A60V41 mJ
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ACTIVE (Last Updated: 2 days ago)8 WeeksTape & Reel (TR)yesActive1 (Unlimited)not_compliant-ROHS3 CompliantSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJAutomotive, AEC-Q101----MOSFET (Metal Oxide)-----18W Tc--N-Channel27.4m Ω @ 10A, 10V2.1V @ 250μA400pF @ 25V17A Tc3.4nC @ 4.5V60V4.5V 10V±16V-----
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ACTIVE, NOT REC (Last Updated: 4 days ago)10 Weeks-yesActive---RoHS Compliant---------------------------------
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