ON Semiconductor NVD5490NLT4G-VF01
- Part Number:
- NVD5490NLT4G-VF01
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2485228-NVD5490NLT4G-VF01
- Description:
- MOSFET N-CH 60V 17A DPAK
- ECAD Model:
-
- Datasheet:
- NVD5490NLT4G-VF01
ON Semiconductor NVD5490NLT4G-VF01 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD5490NLT4G-VF01.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time22 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Reach Compliance Codenot_compliant
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.4W Ta 49W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs64m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds365pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Ta 17A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)17A
- Drain-source On Resistance-Max0.085Ohm
- Pulsed Drain Current-Max (IDM)71A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)41 mJ
- RoHS StatusROHS3 Compliant
NVD5490NLT4G-VF01 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 41 mJ.A device's maximal input capacitance is 365pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 17A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 71A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NVD5490NLT4G-VF01 Features
the avalanche energy rating (Eas) is 41 mJ
based on its rated peak drain current 71A.
a 60V drain to source voltage (Vdss)
NVD5490NLT4G-VF01 Applications
There are a lot of ON Semiconductor
NVD5490NLT4G-VF01 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 41 mJ.A device's maximal input capacitance is 365pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 17A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 71A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NVD5490NLT4G-VF01 Features
the avalanche energy rating (Eas) is 41 mJ
based on its rated peak drain current 71A.
a 60V drain to source voltage (Vdss)
NVD5490NLT4G-VF01 Applications
There are a lot of ON Semiconductor
NVD5490NLT4G-VF01 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NVD5490NLT4G-VF01 More Descriptions
Power MOSFET 60V, 17A, 64 mOhm, Single N Channel, DPAK, Logic Level.
Nfet Dpak 60V 17A 64Mohm/Reel Rohs Compliant: Yes |Onsemi NVD5490NLT4G-VF01
Power MOSFET Single N-Channel 60V 17A 64mOhm 3-Pin DPAK T/R - Tape and Reel
Nfet Dpak 60V 17A 64Mohm/Reel Rohs Compliant: Yes |Onsemi NVD5490NLT4G-VF01
Power MOSFET Single N-Channel 60V 17A 64mOhm 3-Pin DPAK T/R - Tape and Reel
The three parts on the right have similar specifications to NVD5490NLT4G-VF01.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusView Compare
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NVD5490NLT4G-VF01ACTIVE (Last Updated: 1 week ago)22 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q1012012e3yesActive1 (Unlimited)2Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGnot_compliantR-PSSO-G21SINGLE WITH BUILT-IN DIODE3.4W Ta 49W TcENHANCEMENT MODEDRAINN-Channel64m Ω @ 9A, 10V2.5V @ 250μA365pF @ 25V5A Ta 17A Tc14nC @ 10V60V4.5V 10V±20V17A0.085Ohm71A60V41 mJROHS3 Compliant- -
ACTIVE, NOT REC (Last Updated: 4 days ago)4 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101--yesNot For New Designs1 (Unlimited)--MOSFET (Metal Oxide)------3.9W Ta 100W Tc--N-Channel17m Ω @ 25A, 10V2.5V @ 250μA1410pF @ 25V10.7A Ta 54A Tc48nC @ 10V60V4.5V 10V±20V-----ROHS3 Compliant
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LIFETIME (Last Updated: 4 days ago)4 Weeks--------e3yesActive1 (Unlimited)-Tin (Sn)------------------------RoHS Compliant
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ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101--yesActive1 (Unlimited)--MOSFET (Metal Oxide)--not_compliant---18W Tc--N-Channel27.4m Ω @ 10A, 10V2.1V @ 250μA400pF @ 25V17A Tc3.4nC @ 4.5V60V4.5V 10V±16V-----ROHS3 Compliant
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