NVD5C688NLT4G

ON Semiconductor NVD5C688NLT4G

Part Number:
NVD5C688NLT4G
Manufacturer:
ON Semiconductor
Ventron No:
2484705-NVD5C688NLT4G
Description:
T6 60V LL DPAK
ECAD Model:
Datasheet:
NVD5C688NLT4G

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Specifications
ON Semiconductor NVD5C688NLT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD5C688NLT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    not_compliant
  • Power Dissipation-Max
    18W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    27.4m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    17A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    3.4nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • RoHS Status
    ROHS3 Compliant
Description
NVD5C688NLT4G Description
NVD5C688NLT4G is a  type of single N-channel power MOSFET provided by ON Semiconductor for low RDS(on). It is capable of providing low RDS(on) to minimize conduction losses, and low QG and capacitance to minimize driver losses. Based on its specific characteristics, it is well suited for uninterruptible power supplies and synchronous rectification.

NVD5C688NLT4G Features
Low RDS(on)
High current capability
Fast switching speed
Low conduction losses
Available in the DPAK package

NVD5C688NLT4G Applications
Uninterruptible power supplies
Synchronous rectification
Switching applications
NVD5C688NLT4G More Descriptions
Single N-Channel Power MOSFET 60V, 17A, 27.4mΩ DPAK 2500 tape and reel
Transistor MOSFET N-CH 60V 17A 3-Pin TO-252 T/R - Tape and Reel
Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0228ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 18W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 17A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to NVD5C688NLT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Reach Compliance Code
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Surface Mount
    Transistor Element Material
    Published
    Number of Terminations
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • NVD5C688NLT4G
    NVD5C688NLT4G
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    yes
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    not_compliant
    18W Tc
    N-Channel
    27.4m Ω @ 10A, 10V
    2.1V @ 250μA
    400pF @ 25V
    17A Tc
    3.4nC @ 4.5V
    60V
    4.5V 10V
    ±16V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NVD5890NT4G-VF01
    LIFETIME (Last Updated: 4 days ago)
    4 Weeks
    -
    -
    -
    -
    -
    yes
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    e3
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NVD5862NT4G-VF01
    LAST SHIPMENTS (Last Updated: 4 days ago)
    4 Weeks
    -
    -
    -
    -
    -
    yes
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    e3
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NVD5490NLT4G-VF01
    ACTIVE (Last Updated: 1 week ago)
    22 Weeks
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    yes
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    not_compliant
    3.4W Ta 49W Tc
    N-Channel
    64m Ω @ 9A, 10V
    2.5V @ 250μA
    365pF @ 25V
    5A Ta 17A Tc
    14nC @ 10V
    60V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    e3
    Tin (Sn)
    YES
    SILICON
    2012
    2
    SINGLE
    GULL WING
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    17A
    0.085Ohm
    71A
    60V
    41 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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