ON Semiconductor NVD5C688NLT4G
- Part Number:
- NVD5C688NLT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2484705-NVD5C688NLT4G
- Description:
- T6 60V LL DPAK
- Datasheet:
- NVD5C688NLT4G
ON Semiconductor NVD5C688NLT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD5C688NLT4G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Power Dissipation-Max18W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs27.4m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs3.4nC @ 4.5V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusROHS3 Compliant
NVD5C688NLT4G Description
NVD5C688NLT4G is a type of single N-channel power MOSFET provided by ON Semiconductor for low RDS(on). It is capable of providing low RDS(on) to minimize conduction losses, and low QG and capacitance to minimize driver losses. Based on its specific characteristics, it is well suited for uninterruptible power supplies and synchronous rectification.
NVD5C688NLT4G Features
Low RDS(on)
High current capability
Fast switching speed
Low conduction losses
Available in the DPAK package
NVD5C688NLT4G Applications
Uninterruptible power supplies
Synchronous rectification
Switching applications
NVD5C688NLT4G is a type of single N-channel power MOSFET provided by ON Semiconductor for low RDS(on). It is capable of providing low RDS(on) to minimize conduction losses, and low QG and capacitance to minimize driver losses. Based on its specific characteristics, it is well suited for uninterruptible power supplies and synchronous rectification.
NVD5C688NLT4G Features
Low RDS(on)
High current capability
Fast switching speed
Low conduction losses
Available in the DPAK package
NVD5C688NLT4G Applications
Uninterruptible power supplies
Synchronous rectification
Switching applications
NVD5C688NLT4G More Descriptions
Single N-Channel Power MOSFET 60V, 17A, 27.4mΩ DPAK 2500 tape and reel
Transistor MOSFET N-CH 60V 17A 3-Pin TO-252 T/R - Tape and Reel
Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0228ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 18W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 17A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor MOSFET N-CH 60V 17A 3-Pin TO-252 T/R - Tape and Reel
Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0228ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 18W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 17A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The three parts on the right have similar specifications to NVD5C688NLT4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)TechnologyReach Compliance CodePower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusJESD-609 CodeTerminal FinishSurface MountTransistor Element MaterialPublishedNumber of TerminationsTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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NVD5C688NLT4GACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101yesActive1 (Unlimited)MOSFET (Metal Oxide)not_compliant18W TcN-Channel27.4m Ω @ 10A, 10V2.1V @ 250μA400pF @ 25V17A Tc3.4nC @ 4.5V60V4.5V 10V±16VROHS3 Compliant-------------------
-
LIFETIME (Last Updated: 4 days ago)4 Weeks-----yesActive1 (Unlimited)------------RoHS Compliante3Tin (Sn)----------------
-
LAST SHIPMENTS (Last Updated: 4 days ago)4 Weeks-----yesActive1 (Unlimited)------------RoHS Compliante3Tin (Sn)----------------
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ACTIVE (Last Updated: 1 week ago)22 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101yesActive1 (Unlimited)MOSFET (Metal Oxide)not_compliant3.4W Ta 49W TcN-Channel64m Ω @ 9A, 10V2.5V @ 250μA365pF @ 25V5A Ta 17A Tc14nC @ 10V60V4.5V 10V±20VROHS3 Compliante3Tin (Sn)YESSILICON20122SINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN17A0.085Ohm71A60V41 mJ
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