ON Semiconductor NTMS4816NR2G
- Part Number:
- NTMS4816NR2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2848865-NTMS4816NR2G
- Description:
- MOSFET N-CH 30V 6.8A 8-SOIC
- Datasheet:
- NTMS4816NR2G
ON Semiconductor NTMS4816NR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMS4816NR2G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Power Dissipation-Max780mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.04W
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1060pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.8A Ta
- Gate Charge (Qg) (Max) @ Vgs18.3nC @ 10V
- Rise Time3.8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time21.6 ns
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)33A
- Height1.5mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTMS4816NR2G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1060pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 9A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 21.6 ns.Peak drain current for this device is 33A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NTMS4816NR2G Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21.6 ns
based on its rated peak drain current 33A.
NTMS4816NR2G Applications
There are a lot of ON Semiconductor
NTMS4816NR2G applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1060pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 9A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 21.6 ns.Peak drain current for this device is 33A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NTMS4816NR2G Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21.6 ns
based on its rated peak drain current 33A.
NTMS4816NR2G Applications
There are a lot of ON Semiconductor
NTMS4816NR2G applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
NTMS4816NR2G More Descriptions
NTMS4816NR2G N-channel MOSFET Transistor; 11 A; 30 V; 8-Pin SOIC
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R - Tape and Reel
Single N-Channel Power MOSFET 30V, 11A, 10mΩ
Mosfet, N-Ch, 30V, 11A, Soic; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0082Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Onsemi NTMS4816NR2G.
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R - Tape and Reel
Single N-Channel Power MOSFET 30V, 11A, 10mΩ
Mosfet, N-Ch, 30V, 11A, Soic; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0082Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Onsemi NTMS4816NR2G.
The three parts on the right have similar specifications to NTMS4816NR2G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountVoltage - Rated DCMax Power DissipationCurrent RatingDrain to Source Voltage (Vdss)FET FeatureTerminal FinishJESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)SubcategoryView Compare
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NTMS4816NR2GACTIVE (Last Updated: 4 days ago)2 WeeksTinSurface Mount8-SOIC (0.154, 3.90mm Width)YES8SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)8EAR99MOSFET (Metal Oxide)DUALGULL WING2604081780mW TaSingleENHANCEMENT MODE2.04W8 nsN-ChannelSWITCHING10m Ω @ 9A, 10V3V @ 250μA1060pF @ 25V6.8A Ta18.3nC @ 10V3.8ns4.5V 10V±20V8 ns21.6 ns9A20V30V33A1.5mm5mm4mmNoROHS3 CompliantLead Free----------------
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---Surface Mount8-SOIC (0.154, 3.90mm Width)-8--Tape & Reel (TR)2007--Obsolete3 (168 Hours)--MOSFET (Metal Oxide)-----------P-Channel-90m Ω @ 2.4A, 4.5V-750pF @ 16V2.3A Ta18nC @ 4.5V-----2.3A-------RoHS CompliantLead FreeSurface Mount-20V710mW-2.3A20VSchottky Diode (Isolated)---------
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---Surface Mount8-SOIC (0.154, 3.90mm Width)YES-SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)8-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED81870mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING12m Ω @ 10A, 10V2.5V @ 250μA1.9pF @ 15V7.1A Ta16nC @ 4.5V-4.5V 10V±20V----------ROHS3 Compliant-----30V-MATTE TINR-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE7.1A0.012Ohm30V225 pF-
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ACTIVE (Last Updated: 2 days ago)51 WeeksTinSurface Mount8-SOIC (0.154, 3.90mm Width)YES8SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)8EAR99MOSFET (Metal Oxide)DUALGULL WING2604081820mW TaSingleENHANCEMENT MODE2.12W15.3 nsN-ChannelSWITCHING4.3m Ω @ 7.5A, 10V3V @ 250μA4068pF @ 25V10.6A Ta58.9nC @ 10V4.7ns4.5V 10V±20V42.2 ns68.6 ns17A20V--1.5mm5mm4mmNoROHS3 CompliantLead Free----30V------0.0043Ohm30V-FET General Purpose Power
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