ON Semiconductor NTD4810NHT4G

Name: NTD4810NHT4G
Brand: ON Semiconductor
SKU: 3586728-NTD4810NHT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4810NHT4G

Manufacturer:: ON Semiconductor

Ventron No:: 3586728-NTD4810NHT4G

Description:: MOSFET N-CH 30V 8.6A DPAK

ECAD Model:

Datasheet:: NTD4810NHT4G

Specifications

ON Semiconductor NTD4810NHT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4810NHT4G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
265
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSFM-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.28W Ta 50W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.225pF @ 12V
Current - Continuous Drain (Id) @ 25°C
9A Ta 54A Tc
Gate Charge (Qg) (Max) @ Vgs
12nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
10.8A
Drain-source On Resistance-Max
0.0167Ohm
Pulsed Drain Current-Max (IDM)
120A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
66 mJ
RoHS Status
ROHS3 Compliant

Description

NTD4810NHT4G Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 66 mJ.The maximum input capacitance of this device is 1.225pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10.8A.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 11.5V), this device helps reduce its power consumption.

NTD4810NHT4G Features
the avalanche energy rating (Eas) is 66 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)

NTD4810NHT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4810NHT4G applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

NTD4810NHT4G More Descriptions

Power MOSFET 30V 54 A 10 mOhm Single N-Channel DPAK
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 9A Ta 54A Tc 54A 1.28W Ta 50W Tc 30V
MOSFET, N, 30V, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 54A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 2.5V; Power Dissipatio

Product Comparison

The three parts on the right have similar specifications to NTD4810NHT4G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Transistor Application

View Compare
NTD4810NHT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

265

40

3

R-PSFM-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.28W Ta 50W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

10m Ω @ 30A, 10V

2.5V @ 250μA

1.225pF @ 12V

9A Ta 54A Tc

12nC @ 4.5V

30V

4.5V 11.5V

±20V

10.8A

0.0167Ohm

120A

30V

66 mJ

ROHS3 Compliant

-

-

-
NTD4804N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

1.43W Ta 107W Tc

-

-

N-Channel

4mOhm @ 30A, 10V

2.5V @ 250μA

4.49pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

NTD4810NHT4G vs NTD4804N-1G
NTD4906N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.38W Ta 37.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

5.5m Ω @ 30A, 10V

2.2V @ 250μA

1.932pF @ 15V

10.3A Ta 54A Tc

24nC @ 10V

30V

4.5V 10V

±20V

14A

0.008Ohm

223A

30V

48 mJ

ROHS3 Compliant

-

SWITCHING

NTD4810NHT4G vs NTD4906N-1G
NTD4855N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

TIN

MOSFET (Metal Oxide)

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.35W Ta 66.7W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

25V

4.5V 10V

±20V

14A

0.006Ohm

197A

25V

220 mJ

ROHS3 Compliant

-

SWITCHING

NTD4810NHT4G vs NTD4855N-35G