ON Semiconductor NTD4858N-35G
- Part Number:
- NTD4858N-35G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3070470-NTD4858N-35G
- Description:
- MOSFET N-CH 25V 11.2A IPAK
- Datasheet:
- NTD4858N-35G
ON Semiconductor NTD4858N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4858N-35G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max1.3W Ta 54.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.2m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1563pF @ 12V
- Current - Continuous Drain (Id) @ 25°C11.2A Ta 73A Tc
- Gate Charge (Qg) (Max) @ Vgs19.2nC @ 4.5V
- Rise Time17.3ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)2.8 ns
- Turn-Off Delay Time23.8 ns
- Continuous Drain Current (ID)13.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage25V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTD4858N-35G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1563pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13.6A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.It is [23.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTD4858N-35G Features
a continuous drain current (ID) of 13.6A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 23.8 ns
NTD4858N-35G Applications
There are a lot of ON Semiconductor
NTD4858N-35G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1563pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13.6A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.It is [23.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTD4858N-35G Features
a continuous drain current (ID) of 13.6A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 23.8 ns
NTD4858N-35G Applications
There are a lot of ON Semiconductor
NTD4858N-35G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NTD4858N-35G More Descriptions
Single N-Channel Power MOSFET 25V, 73A, 6.2mΩ
Trans MOSFET N-CH 25V 14A 3-Pin(3 Tab) IPAK Rail
Mosfet, N-Ch, 25V, 73A, To-251 |Onsemi NTD4858N-35G
25V 11.2A 1.3W 6.2m´Î@10V30A 2.5V@250Ã×A N Channel IPAK-3 MOSFETs ROHS
MOSFET NFET 25V 73A 0.0062R DPAK
Power Field-Effect Transistor, 11.2A I(D), 25V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 25V 11.2A/73A IPAK
French Electronic Distributor since 1988
Trans MOSFET N-CH 25V 14A 3-Pin(3 Tab) IPAK Rail
Mosfet, N-Ch, 25V, 73A, To-251 |Onsemi NTD4858N-35G
25V 11.2A 1.3W 6.2m´Î@10V30A 2.5V@250Ã×A N Channel IPAK-3 MOSFETs ROHS
MOSFET NFET 25V 73A 0.0062R DPAK
Power Field-Effect Transistor, 11.2A I(D), 25V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 25V 11.2A/73A IPAK
French Electronic Distributor since 1988
The three parts on the right have similar specifications to NTD4858N-35G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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NTD4858N-35GACTIVE (Last Updated: 1 day ago)4 WeeksThrough HoleTO-251-3 Stub Leads, IPakNO3SILICON-55°C~175°C TJTube2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)311.3W Ta 54.5W TcSingleENHANCEMENT MODE2WDRAINN-ChannelSWITCHING6.2m Ω @ 30A, 10V2.5V @ 250μA1563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V17.3ns4.5V 10V±20V2.8 ns23.8 ns13.6A20V25VNoROHS3 CompliantLead Free-------
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--Through HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~175°C TJTube---Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--1.4W Ta 50W Tc----N-Channel-10mOhm @ 30A, 10V2.5V @ 250μA1.35pF @ 12V9A Ta 54A Tc11nC @ 4.5V-4.5V 11.5V±20V------ROHS3 Compliant-I-PAK30V----
-
--Through HoleTO-251-3 Stub Leads, IPak----55°C~175°C TJTube---Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--1.4W Ta 52W Tc----N-Channel-9mOhm @ 30A, 10V2.5V @ 250μA1.456pF @ 12V9.6A Ta 58A Tc13nC @ 4.5V-4.5V 11.5V±20V------ROHS3 Compliant-I-PAK30V----
-
LAST SHIPMENTS (Last Updated: 1 week ago)-Through HoleTO-251-3 Stub Leads, IPakNO3SILICON-55°C~175°C TJTube2010e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)-MOSFET (Metal Oxide)311.27W Ta 36.6W TcSingleENHANCEMENT MODE1.95WDRAINN-ChannelSWITCHING9.3m Ω @ 30A, 10V2.5V @ 250μA990pF @ 12V9.2A Ta 49A Tc17.8nC @ 10V-----11.3mA20V--RoHS CompliantLead Free-25V9.2A98A25V60.5 mJ
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