ON Semiconductor NTD4804N-1G
- Part Number:
- NTD4804N-1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3554527-NTD4804N-1G
- Description:
- MOSFET N-CH 30V 14.5A IPAK
- ECAD Model:
-
- Datasheet:
- NTD4804N-1G
ON Semiconductor NTD4804N-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4804N-1G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device PackageI-PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.43W Ta 107W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4.49pF @ 12V
- Current - Continuous Drain (Id) @ 25°C14.5A Ta 124A Tc
- Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTD4804N-1G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4.49pF @ 12V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 11.5V volts (4.5V 11.5V).
NTD4804N-1G Features
a 30V drain to source voltage (Vdss)
NTD4804N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4804N-1G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4.49pF @ 12V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 11.5V volts (4.5V 11.5V).
NTD4804N-1G Features
a 30V drain to source voltage (Vdss)
NTD4804N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4804N-1G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTD4804N-1G More Descriptions
Single N-Channel Power MOSFET 30V, 117A, 4mΩ
MOSFETs- Power and Small Signal NFET 30V 117A 4MOHM
Power MOSFET 30 V 117 A Single N-Channel DPAK/IPAK
Compliant 5 ns Lead Free 19 ns 4 mΩ DPAK 4 Obsolete (Last Updated: 2 years ago)
Trans MOSFET N-CH 30V 19A 3-Pin(3 Tab) IPAK Rail
Power Field-Effect Transistor, 14.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 14.5A/124A IPAK
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:117A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:93.75W ;RoHS Compliant: Yes
MOSFETs- Power and Small Signal NFET 30V 117A 4MOHM
Power MOSFET 30 V 117 A Single N-Channel DPAK/IPAK
Compliant 5 ns Lead Free 19 ns 4 mΩ DPAK 4 Obsolete (Last Updated: 2 years ago)
Trans MOSFET N-CH 30V 19A 3-Pin(3 Tab) IPAK Rail
Power Field-Effect Transistor, 14.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 14.5A/124A IPAK
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:117A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:93.75W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTD4804N-1G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusLifecycle StatusSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTransistor ApplicationContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Lead FreeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain-source On Resistance-MaxFactory Lead TimeSubcategoryRise TimeFall Time (Typ)Turn-Off Delay TimeDrain to Source Breakdown VoltageRadiation HardeningView Compare
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NTD4804N-1GThrough HoleTO-251-3 Short Leads, IPak, TO-251AAI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.43W Ta 107W TcN-Channel4mOhm @ 30A, 10V2.5V @ 250μA4.49pF @ 12V14.5A Ta 124A Tc40nC @ 4.5V30V4.5V 11.5V±20VROHS3 Compliant--------------------------------------- -
Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.27W Ta 36.6W TcN-Channel9.3m Ω @ 30A, 10V2.5V @ 250μA990pF @ 12V9.2A Ta 49A Tc17.8nC @ 10V25V--RoHS CompliantLAST SHIPMENTS (Last Updated: 1 week ago)NO3SILICON2010e3yes3EAR99Tin (Sn)31SingleENHANCEMENT MODE1.95WDRAINSWITCHING11.3mA20V9.2A98A25V60.5 mJLead Free--------------
-
Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.35W Ta 66.7W TcN-Channel4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V25V4.5V 10V±20VROHS3 Compliant-NO-SILICON-e3yes3-TIN31-ENHANCEMENT MODE-DRAINSWITCHING--14A197A25V220 mJ-SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3COMMERCIALSINGLE WITH BUILT-IN DIODE0.006Ohm-------
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Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeActive1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 54.5W TcN-Channel6.2m Ω @ 30A, 10V2.5V @ 250μA1563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V-4.5V 10V±20VROHS3 CompliantACTIVE (Last Updated: 1 day ago)NO3SILICON2007e3yes3EAR99Tin (Sn)31SingleENHANCEMENT MODE2WDRAINSWITCHING13.6A20V----Lead Free-------4 WeeksFET General Purpose Power17.3ns2.8 ns23.8 ns25VNo
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