ON Semiconductor NTD4815NH-35G
- Part Number:
- NTD4815NH-35G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3586667-NTD4815NH-35G
- Description:
- MOSFET N-CH 30V 6.9A IPAK
- Datasheet:
- NTD4815NH-35G
ON Semiconductor NTD4815NH-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4815NH-35G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.26W Ta 32.6W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds845pF @ 12V
- Current - Continuous Drain (Id) @ 25°C6.9A Ta 35A Tc
- Gate Charge (Qg) (Max) @ Vgs6.8nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)6.9A
- Drain-source On Resistance-Max0.015Ohm
- Pulsed Drain Current-Max (IDM)87A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)35.6 mJ
- RoHS StatusROHS3 Compliant
NTD4815NH-35G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 35.6 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 845pF @ 12V.The drain current is the maximum continuous current this device can conduct, which is 6.9A.Pulsed drain current is maximum rated peak drain current 87A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 11.5V volts (4.5V 11.5V).
NTD4815NH-35G Features
the avalanche energy rating (Eas) is 35.6 mJ
based on its rated peak drain current 87A.
a 30V drain to source voltage (Vdss)
NTD4815NH-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4815NH-35G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 35.6 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 845pF @ 12V.The drain current is the maximum continuous current this device can conduct, which is 6.9A.Pulsed drain current is maximum rated peak drain current 87A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 11.5V volts (4.5V 11.5V).
NTD4815NH-35G Features
the avalanche energy rating (Eas) is 35.6 mJ
based on its rated peak drain current 87A.
a 30V drain to source voltage (Vdss)
NTD4815NH-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4815NH-35G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTD4815NH-35G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 17.6ns
Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTD4815NH-35G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusNumber of PinsPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormReach Compliance CodeCurrent RatingElement ConfigurationPower DissipationTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeMountView Compare
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NTD4815NH-35GThrough HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.26W Ta 32.6W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING15m Ω @ 30A, 10V2.5V @ 250μA845pF @ 12V6.9A Ta 35A Tc6.8nC @ 4.5V30V4.5V 11.5V±20V6.9A0.015Ohm87A30V35.6 mJROHS3 Compliant-------------------
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Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.38W Ta 37.5W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.5m Ω @ 30A, 10V2.2V @ 250μA1.932pF @ 15V10.3A Ta 54A Tc24nC @ 10V30V4.5V 10V±20V14A0.008Ohm223A30V48 mJROHS3 Compliant------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTubee0yesObsolete1 (Unlimited)2Tin/Lead (Sn80Pb20)MOSFET (Metal Oxide)-235NOT SPECIFIED4R-PSSO-G2Not Qualified1-1.04W Ta 75W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING10m Ω @ 20A, 10V3V @ 250μA2400pF @ 24V8.4A Ta 68A Tc80nC @ 10V-4.5V 10V±20V-0.01Ohm28A-722 mJNon-RoHS CompliantOBSOLETE (Last Updated: 1 week ago)42005EAR99AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VGULL WINGnot_compliant68ASingle75W40 ns68A20V30VLead Free-
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Through HoleTO-251-3 Stub Leads, IPak---55°C~175°C TJTube--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------1.3W Ta 52W Tc--N-Channel-9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V30V4.5V 11.5V±20V-----RoHS Compliant-32009----------58A---Through Hole
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