ON Semiconductor NTD4302
- Part Number:
- NTD4302
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3071137-NTD4302
- Description:
- MOSFET N-CH 30V 8.4A DPAK
- Datasheet:
- NTD4302
ON Semiconductor NTD4302 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4302.
- Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee0
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn80Pb20)
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating68A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max1.04W Ta 75W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation75W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2400pF @ 24V
- Current - Continuous Drain (Id) @ 25°C8.4A Ta 68A Tc
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)68A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.01Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)28A
- Avalanche Energy Rating (Eas)722 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
NTD4302 Description
NTD4302 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 30V. The operating temperature of the NTD4302 is -55°C~150°C TJ and its maximum power dissipation is 75W. NTD4302 has 4 pins and it is available in Tube packaging way. The Turn-Off Delay Time of the NTD4302 is 40 ns.
NTD4302 Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
DPAK Mounting Information Provided
Pb?Free Packages are Available
NTD4302 Applications
DC?DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery Powered Products: i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards
NTD4302 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 30V. The operating temperature of the NTD4302 is -55°C~150°C TJ and its maximum power dissipation is 75W. NTD4302 has 4 pins and it is available in Tube packaging way. The Turn-Off Delay Time of the NTD4302 is 40 ns.
NTD4302 Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
DPAK Mounting Information Provided
Pb?Free Packages are Available
NTD4302 Applications
DC?DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery Powered Products: i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards
NTD4302 More Descriptions
Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ
MOSFETs- Power and Small Signal 30V 68A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 44.2K OHM 1% 1/4W 1206
MOSFETs- Power and Small Signal 30V 68A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 44.2K OHM 1% 1/4W 1206
The three parts on the right have similar specifications to NTD4302.
-
ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Terminal PositionConfigurationDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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NTD4302OBSOLETE (Last Updated: 1 week ago)Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES4SILICON-55°C~150°C TJTube2005e0yesObsolete1 (Unlimited)2EAR99Tin/Lead (Sn80Pb20)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)GULL WING235not_compliant68ANOT SPECIFIED4R-PSSO-G2Not Qualified11.04W Ta 75W TcSingleENHANCEMENT MODE75WDRAINN-ChannelSWITCHING10m Ω @ 20A, 10V3V @ 250μA2400pF @ 24V8.4A Ta 68A Tc80nC @ 10V4.5V 10V±20V40 ns68A20V0.01Ohm30V28A722 mJNon-RoHS CompliantLead Free-------
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~175°C TJTube---Obsolete1 (Unlimited)------MOSFET (Metal Oxide)---------1.43W Ta 107W Tc----N-Channel-4mOhm @ 30A, 10V2.5V @ 250μA4.49pF @ 12V14.5A Ta 124A Tc40nC @ 4.5V4.5V 11.5V±20V-------ROHS3 Compliant-I-PAK30V----
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~175°C TJTube---Obsolete1 (Unlimited)------MOSFET (Metal Oxide)---------1.4W Ta 50W Tc----N-Channel-10mOhm @ 30A, 10V2.5V @ 250μA1.35pF @ 12V9A Ta 54A Tc11nC @ 4.5V4.5V 11.5V±20V-------ROHS3 Compliant-I-PAK30V----
-
-Through HoleTO-251-3 Short Leads, IPak, TO-251AANO-SILICON-55°C~175°C TJTube-e3yesObsolete1 (Unlimited)3-MATTE TIN---MOSFET (Metal Oxide)-NOT SPECIFIED--NOT SPECIFIED3R-PSIP-T3COMMERCIAL11.38W Ta 37.5W Tc-ENHANCEMENT MODE-DRAINN-ChannelSWITCHING5.5m Ω @ 30A, 10V2.2V @ 250μA1.932pF @ 15V10.3A Ta 54A Tc24nC @ 10V4.5V 10V±20V---0.008Ohm-223A48 mJROHS3 Compliant--30VSINGLESINGLE WITH BUILT-IN DIODE14A30V
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