ON Semiconductor NTD4806N-35G

Name: NTD4806N-35G
Brand: ON Semiconductor
SKU: 2852552-NTD4806N-35G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4806N-35G

Manufacturer:: ON Semiconductor

Ventron No:: 2852552-NTD4806N-35G

Description:: MOSFET N-CH 30V 11A IPAK

ECAD Model:

Datasheet:: NTD4806N-35G

Specifications

ON Semiconductor NTD4806N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4806N-35G.

Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Supplier Device Package
I-PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.4W Ta 68W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.142pF @ 12V
Current - Continuous Drain (Id) @ 25°C
11.3A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

NTD4806N-35G Overview
A device's maximal input capacitance is 2.142pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 11.5V).

NTD4806N-35G Features
a 30V drain to source voltage (Vdss)

NTD4806N-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4806N-35G applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

NTD4806N-35G More Descriptions

Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 76A 2.14W 4.7ns
Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 30V 15.6A 3-Pin(3 Tab) IPAK Rail - Rail/Tube
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 11.3A/79A IPAK

Product Comparison

The three parts on the right have similar specifications to NTD4806N-35G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Lifecycle Status

Number of Pins

Published

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Reach Compliance Code

Current Rating

Element Configuration

Power Dissipation

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

View Compare
NTD4806N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

I-PAK

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.4W Ta 68W Tc

N-Channel

6mOhm @ 30A, 10V

2.5V @ 250μA

2.142pF @ 12V

11.3A Ta 79A Tc

23nC @ 4.5V

30V

4.5V 11.5V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4809N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

I-PAK

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.4W Ta 52W Tc

N-Channel

9mOhm @ 30A, 10V

2.5V @ 250μA

1.456pF @ 12V

9.6A Ta 58A Tc

13nC @ 4.5V

30V

4.5V 11.5V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4806N-35G vs NTD4809N-35G
NTD4855N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.35W Ta 66.7W Tc

N-Channel

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

25V

4.5V 10V

±20V

ROHS3 Compliant

NO

SILICON

e3

yes

3

TIN

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

14A

0.006Ohm

197A

25V

220 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4806N-35G vs NTD4855N-35G
NTD4302

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.04W Ta 75W Tc

N-Channel

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

Non-RoHS Compliant

YES

SILICON

e0

yes

2

Tin/Lead (Sn80Pb20)

-

235

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

ENHANCEMENT MODE

DRAIN

SWITCHING

-

0.01Ohm

28A

-

722 mJ

OBSOLETE (Last Updated: 1 week ago)

4

2005

EAR99

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

GULL WING

not_compliant

68A

Single

75W

40 ns

68A

20V

30V

Lead Free

NTD4806N-35G vs NTD4302