ON Semiconductor NTD4804NAT4G

Name: NTD4804NAT4G
Brand: ON Semiconductor
SKU: 3813749-NTD4804NAT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4804NAT4G

Manufacturer:: ON Semiconductor

Ventron No:: 3813749-NTD4804NAT4G

Description:: MOSFET N-CH 30V 14.5A DPAK

ECAD Model:

Datasheet:: NTD4804NA

Specifications

ON Semiconductor NTD4804NAT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4804NAT4G.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Supplier Device Package
DPAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
1.43W Ta 93.75W Tc
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4490pF @ 12V
Current - Continuous Drain (Id) @ 25°C
14.5A Ta 124A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Continuous Drain Current (ID)
19A
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.49nF
Rds On Max
4 mΩ
RoHS Status
RoHS Compliant

Description

NTD4804NAT4G Overview
A device's maximal input capacitance is 4490pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 19A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 11.5V).

NTD4804NAT4G Features
a continuous drain current (ID) of 19A
a 30V drain to source voltage (Vdss)

NTD4804NAT4G Applications
There are a lot of ON Semiconductor
NTD4804NAT4G applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

NTD4804NAT4G More Descriptions

MOSFET N-CH 30V 14.5A DPAK
RES SMD 47K OHM 1% 1/4W 1206
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:19A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD4804NAT4G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Power Dissipation-Max

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Input Capacitance

Rds On Max

RoHS Status

Lifecycle Status

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Pin Count

Element Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Lead Free

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain-source On Resistance-Max

View Compare
NTD4804NAT4G

ON Semiconductor

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

DPAK

-55°C~175°C TJ

Tape & Reel (TR)

2006

Obsolete

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

1

1.43W Ta 93.75W Tc

2.5W

N-Channel

4mOhm @ 30A, 10V

2.5V @ 250μA

4490pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

30V

4.5V 11.5V

±20V

19A

20V

4.49nF

4 mΩ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4809N-35G

ON Semiconductor

-

Through Hole

TO-251-3 Stub Leads, IPak

-

I-PAK

-55°C~175°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

1.4W Ta 52W Tc

-

N-Channel

9mOhm @ 30A, 10V

2.5V @ 250μA

1.456pF @ 12V

9.6A Ta 58A Tc

13nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4804NAT4G vs NTD4809N-35G
NTD4863NA-35G

ON Semiconductor

-

Through Hole

TO-251-3 Stub Leads, IPak

3

-

-55°C~175°C TJ

Tube

2010

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

1.27W Ta 36.6W Tc

1.95W

N-Channel

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

25V

-

-

11.3mA

20V

-

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

NO

SILICON

e3

yes

3

EAR99

Tin (Sn)

3

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

9.2A

98A

25V

60.5 mJ

Lead Free

-

-

-

-

-

-

-

NTD4804NAT4G vs NTD4863NA-35G
NTD4855N-35G

ON Semiconductor

-

Through Hole

TO-251-3 Stub Leads, IPak

-

-

-55°C~175°C TJ

Tube

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

1.35W Ta 66.7W Tc

-

N-Channel

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

25V

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

-

NO

SILICON

e3

yes

3

-

TIN

3

-

ENHANCEMENT MODE

DRAIN

SWITCHING

14A

197A

25V

220 mJ

-

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

0.006Ohm

NTD4804NAT4G vs NTD4855N-35G