Fairchild/ON Semiconductor NDS355AN
- Part Number:
- NDS355AN
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848399-NDS355AN
- Description:
- MOSFET N-CH 30V 1.7A SSOT3
- Datasheet:
- NDS355AN
Fairchild/ON Semiconductor NDS355AN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS355AN.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance85mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating1.7A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500mW
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs85m Ω @ 1.9A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds195pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.7A Ta
- Gate Charge (Qg) (Max) @ Vgs5nC @ 5V
- Rise Time32ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)1.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs1.6 V
- Height1.22mm
- Length2.92mm
- Width3.05mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NDS355AN Description
The NDS355AN is an NDS Series N-Channel Logic Level Enhancement mode power field effect transistor that is manufactured with high cell density, and DMOS technology.
NDS355AN Features
1.7 A, 30 V
RDS(ON) = 0.125Ω @ VGS= 4.5 V
RDS(ON) = 0.085 Ω @ VGS= 10 V
Industry-standard outline SOT-23 surface mount package using proprietary SuperSOT-3 design for superior thermal and electrical capabilities
High-density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Compact industry standard SOT-23 surface mount package.
NDS355AN Applications
Automation
Broadband Access
Broadband Modem
Broadcast & Studio
Building & Home Control
Camcorder
The NDS355AN is an NDS Series N-Channel Logic Level Enhancement mode power field effect transistor that is manufactured with high cell density, and DMOS technology.
NDS355AN Features
1.7 A, 30 V
RDS(ON) = 0.125Ω @ VGS= 4.5 V
RDS(ON) = 0.085 Ω @ VGS= 10 V
Industry-standard outline SOT-23 surface mount package using proprietary SuperSOT-3 design for superior thermal and electrical capabilities
High-density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Compact industry standard SOT-23 surface mount package.
NDS355AN Applications
Automation
Broadband Access
Broadband Modem
Broadcast & Studio
Building & Home Control
Camcorder
NDS355AN More Descriptions
Transistor MOSFET Negative Channel 30 Volt 1.7A 3-Pin SuperSOT T/R
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 125 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 125 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
The three parts on the right have similar specifications to NDS355AN.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTerminal FinishAdditional FeaturePin CountJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRadiation HardeningSeriesThreshold VoltageView Compare
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NDS355ANACTIVE (Last Updated: 3 days ago)10 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)1998e3yesActive1 (Unlimited)3SMD/SMTEAR9985mOhmFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED1.7ANOT SPECIFIEDNot Qualified11500mW TaSingleENHANCEMENT MODE500mW10 nsN-ChannelSWITCHING85m Ω @ 1.9A, 10V2V @ 250μA195pF @ 15V1.7A Ta5nC @ 5V32ns4.5V 10V±20V32 ns13 ns1.7A20V30V30V150°C1.6 V1.22mm2.92mm3.05mmNo SVHCROHS3 CompliantLead Free--------------
-
----Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)3-----MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-NOT SPECIFIEDCOMMERCIAL1-500mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING210m Ω @ 1.3A, 10V2.5V @ 250μA180pF @ 10V1.1A Ta5nC @ 5V-4.5V 10V±12V------------ROHS3 Compliant-YESTINLOGIC LEVEL COMPATIBLE3R-PDSO-G3SINGLE WITH BUILT-IN DIODE20V1.1A0.21Ohm20V---
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ACTIVE (Last Updated: 3 days ago)10 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3-EAR99-FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING-1.1A--1-500mW TaSingleENHANCEMENT MODE500mW9 nsN-ChannelSWITCHING160m Ω @ 1.4A, 10V2V @ 250μA140pF @ 10V1.1A Ta3.5nC @ 5V16ns4.5V 10V±20V16 ns26 ns1.1A20V30V-------ROHS3 CompliantContains Lead-Tin (Sn)LOGIC LEVEL COMPATIBLE-------No--
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ACTIVE (Last Updated: 3 days ago)10 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3yesActive1 (Unlimited)3SMD/SMTEAR99160MOhmFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED1.2ANOT SPECIFIEDNot Qualified11500mW TaSingleENHANCEMENT MODE500mW3 nsN-ChannelSWITCHING160m Ω @ 1.4A, 10V3V @ 250μA145pF @ 15V1.4A Ta1.8nC @ 4.5V8ns4.5V 10V±20V8 ns16 ns1.2A20V30V30V150°C2.1 V1.22mm-3.05mmNo SVHCROHS3 CompliantLead Free--LOGIC LEVEL COMPATIBLE--------PowerTrench®2.1V
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