NDS355AN

Fairchild/ON Semiconductor NDS355AN

Part Number:
NDS355AN
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848399-NDS355AN
Description:
MOSFET N-CH 30V 1.7A SSOT3
ECAD Model:
Datasheet:
NDS355AN

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Specifications
Fairchild/ON Semiconductor NDS355AN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS355AN.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1998
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    85mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    1.7A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    85m Ω @ 1.9A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    195pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 5V
  • Rise Time
    32ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    1.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    1.6 V
  • Height
    1.22mm
  • Length
    2.92mm
  • Width
    3.05mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NDS355AN Description

The NDS355AN is an NDS Series N-Channel Logic Level Enhancement mode power field effect transistor that is manufactured with high cell density, and DMOS technology.


NDS355AN Features

1.7 A, 30 V
RDS(ON) = 0.125Ω @ VGS= 4.5 V
RDS(ON) = 0.085 Ω @ VGS= 10 V
Industry-standard outline SOT-23 surface mount package using proprietary SuperSOT-3 design for superior thermal and electrical capabilities
High-density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Compact industry standard SOT-23 surface mount package.


NDS355AN Applications

Automation
Broadband Access
Broadband Modem
Broadcast & Studio
Building & Home Control
Camcorder
NDS355AN More Descriptions
Transistor MOSFET Negative Channel 30 Volt 1.7A 3-Pin SuperSOT T/R
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 125 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Product Comparison
The three parts on the right have similar specifications to NDS355AN.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Additional Feature
    Pin Count
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Radiation Hardening
    Series
    Threshold Voltage
    View Compare
  • NDS355AN
    NDS355AN
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1998
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    85mOhm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    1.7A
    NOT SPECIFIED
    Not Qualified
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    10 ns
    N-Channel
    SWITCHING
    85m Ω @ 1.9A, 10V
    2V @ 250μA
    195pF @ 15V
    1.7A Ta
    5nC @ 5V
    32ns
    4.5V 10V
    ±20V
    32 ns
    13 ns
    1.7A
    20V
    30V
    30V
    150°C
    1.6 V
    1.22mm
    2.92mm
    3.05mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NDS356P
    -
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    COMMERCIAL
    1
    -
    500mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    210m Ω @ 1.3A, 10V
    2.5V @ 250μA
    180pF @ 10V
    1.1A Ta
    5nC @ 5V
    -
    4.5V 10V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    TIN
    LOGIC LEVEL COMPATIBLE
    3
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    20V
    1.1A
    0.21Ohm
    20V
    -
    -
    -
  • NDS351N
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1.1A
    -
    -
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    9 ns
    N-Channel
    SWITCHING
    160m Ω @ 1.4A, 10V
    2V @ 250μA
    140pF @ 10V
    1.1A Ta
    3.5nC @ 5V
    16ns
    4.5V 10V
    ±20V
    16 ns
    26 ns
    1.1A
    20V
    30V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Contains Lead
    -
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    -
    -
    -
    -
    -
    -
    -
    No
    -
    -
  • NDS351AN
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    160MOhm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    1.2A
    NOT SPECIFIED
    Not Qualified
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    3 ns
    N-Channel
    SWITCHING
    160m Ω @ 1.4A, 10V
    3V @ 250μA
    145pF @ 15V
    1.4A Ta
    1.8nC @ 4.5V
    8ns
    4.5V 10V
    ±20V
    8 ns
    16 ns
    1.2A
    20V
    30V
    30V
    150°C
    2.1 V
    1.22mm
    -
    3.05mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    LOGIC LEVEL COMPATIBLE
    -
    -
    -
    -
    -
    -
    -
    -
    PowerTrench®
    2.1V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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