NDS351N

Fairchild/ON Semiconductor NDS351N

Part Number:
NDS351N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481320-NDS351N
Description:
MOSFET N-CH 30V 1.1A SSOT3
ECAD Model:
Datasheet:
NDS351N

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Specifications
Fairchild/ON Semiconductor NDS351N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS351N.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    1.1A
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    160m Ω @ 1.4A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    140pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.5nC @ 5V
  • Rise Time
    16ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    26 ns
  • Continuous Drain Current (ID)
    1.1A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
NDS351N Description
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.

NDS351N Features
1.1A, 30V. RDS(ON) = 0.25W @ VGS = 4.5V.
Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry-standard SOT-23 surface-mount package.

NDS351N Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
NDS351N More Descriptions
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ
30V 1.1A 500mW 160m´Î@10V1.4A 2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Mosfet, N-Ch, 30V, 1.1A, Supersot-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
MOSFET, N SOT-23; Transistor type:MOSFET; Current, Id cont:1.1A; Resistance, Rds on:0.2ohm; Case style:SOT-23 (TO-236); Current, Idm pulse:10A; Depth, external:2.5mm; Length / Height, external:1.12mm; Marking, SMD:351; Pins, No. of:3; Power dissipation:0.5W; Power, Pd:0.5W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Width, external:3.05mm; Width, tape:8mm
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Product Comparison
The three parts on the right have similar specifications to NDS351N.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Series
    Termination
    Resistance
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Channels
    Threshold Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Width
    REACH SVHC
    View Compare
  • NDS351N
    NDS351N
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1.1A
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    9 ns
    N-Channel
    SWITCHING
    160m Ω @ 1.4A, 10V
    2V @ 250μA
    140pF @ 10V
    1.1A Ta
    3.5nC @ 5V
    16ns
    4.5V 10V
    ±20V
    16 ns
    26 ns
    1.1A
    20V
    30V
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NDS352AP
    -
    -
    -
    -
    SOT23-3
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NDS351AN
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1.2A
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    3 ns
    N-Channel
    SWITCHING
    160m Ω @ 1.4A, 10V
    3V @ 250μA
    145pF @ 15V
    1.4A Ta
    1.8nC @ 4.5V
    8ns
    4.5V 10V
    ±20V
    8 ns
    16 ns
    1.2A
    20V
    30V
    -
    ROHS3 Compliant
    Lead Free
    Tin
    PowerTrench®
    SMD/SMT
    160MOhm
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    2.1V
    30V
    150°C
    2.1 V
    1.22mm
    3.05mm
    No SVHC
  • NDS332P
    -
    -
    -
    -
    SOT23-3
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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