Fairchild/ON Semiconductor NDS351N
- Part Number:
- NDS351N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481320-NDS351N
- Description:
- MOSFET N-CH 30V 1.1A SSOT3
- Datasheet:
- NDS351N
Fairchild/ON Semiconductor NDS351N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS351N.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.1A
- Number of Elements1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500mW
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 1.4A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 10V
- Current - Continuous Drain (Id) @ 25°C1.1A Ta
- Gate Charge (Qg) (Max) @ Vgs3.5nC @ 5V
- Rise Time16ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)1.1A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
NDS351N Description
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
NDS351N Features
1.1A, 30V. RDS(ON) = 0.25W @ VGS = 4.5V.
Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry-standard SOT-23 surface-mount package.
NDS351N Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
NDS351N Features
1.1A, 30V. RDS(ON) = 0.25W @ VGS = 4.5V.
Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry-standard SOT-23 surface-mount package.
NDS351N Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
NDS351N More Descriptions
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ
30V 1.1A 500mW 160m´Î@10V1.4A 2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Mosfet, N-Ch, 30V, 1.1A, Supersot-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
MOSFET, N SOT-23; Transistor type:MOSFET; Current, Id cont:1.1A; Resistance, Rds on:0.2ohm; Case style:SOT-23 (TO-236); Current, Idm pulse:10A; Depth, external:2.5mm; Length / Height, external:1.12mm; Marking, SMD:351; Pins, No. of:3; Power dissipation:0.5W; Power, Pd:0.5W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Width, external:3.05mm; Width, tape:8mm
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
30V 1.1A 500mW 160m´Î@10V1.4A 2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Mosfet, N-Ch, 30V, 1.1A, Supersot-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
MOSFET, N SOT-23; Transistor type:MOSFET; Current, Id cont:1.1A; Resistance, Rds on:0.2ohm; Case style:SOT-23 (TO-236); Current, Idm pulse:10A; Depth, external:2.5mm; Length / Height, external:1.12mm; Marking, SMD:351; Pins, No. of:3; Power dissipation:0.5W; Power, Pd:0.5W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Width, external:3.05mm; Width, tape:8mm
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
The three parts on the right have similar specifications to NDS351N.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreeContact PlatingSeriesTerminationResistancePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ChannelsThreshold VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightWidthREACH SVHCView Compare
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NDS351NACTIVE (Last Updated: 3 days ago)10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING1.1A1500mW TaSingleENHANCEMENT MODE500mW9 nsN-ChannelSWITCHING160m Ω @ 1.4A, 10V2V @ 250μA140pF @ 10V1.1A Ta3.5nC @ 5V16ns4.5V 10V±20V16 ns26 ns1.1A20V30VNoROHS3 CompliantContains Lead----------------
-
----SOT23-3----Tape & Reel (TR)-------------------------------------RoHS Compliant----------------
-
ACTIVE (Last Updated: 3 days ago)10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3yesActive1 (Unlimited)3EAR99-LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING1.2A1500mW TaSingleENHANCEMENT MODE500mW3 nsN-ChannelSWITCHING160m Ω @ 1.4A, 10V3V @ 250μA145pF @ 15V1.4A Ta1.8nC @ 4.5V8ns4.5V 10V±20V8 ns16 ns1.2A20V30V-ROHS3 CompliantLead FreeTinPowerTrench®SMD/SMT160MOhmNOT SPECIFIEDNOT SPECIFIEDNot Qualified12.1V30V150°C2.1 V1.22mm3.05mmNo SVHC
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----SOT23-3----Tape & Reel (TR)-------------------------------------RoHS Compliant----------------
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