Fairchild/ON Semiconductor NDS351AN

Name: NDS351AN
Brand: Fairchild/ON Semiconductor
SKU: 2477975-NDS351AN
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS351AN

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2477975-NDS351AN

Description:: MOSFET N-CH 30V 1.4A SSOT3

ECAD Model:

Datasheet:: NDS351AN

Specifications

Fairchild/ON Semiconductor NDS351AN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS351AN.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
160MOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
1.2A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
145pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.4A Ta
Gate Charge (Qg) (Max) @ Vgs
1.8nC @ 4.5V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2.1 V
Height
1.22mm
Width
3.05mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NDS351AN Description These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.

NDS351AN Features 1.4 A, 30 V. RDS(ON) = 160 mW @ VGS = 10 V RDS(ON) = 250 mW @ VGS = 4.5 V Ultra-Low gate charge Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities High performance trench technology for extremely low RDS(ON)

NDS351AN More Descriptions

N-Channel Logic Level PowerTrench® MOSFET 30V, 1.4A, 160mΩ
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.4A SSOT3
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.25ohm; Rds(on) Test V; Available until stocks are exhausted Alternatives available
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:NDS351AN; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS351AN; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to NDS351AN.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Pin Count

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Radiation Hardening

View Compare
NDS351AN

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2003

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

160MOhm

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

1.2A

NOT SPECIFIED

Not Qualified

1

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

3 ns

N-Channel

SWITCHING

160m Ω @ 1.4A, 10V

3V @ 250μA

145pF @ 15V

1.4A Ta

1.8nC @ 4.5V

8ns

4.5V 10V

±20V

8 ns

16 ns

1.2A

2.1V

20V

30V

30V

150°C

2.1 V

1.22mm

3.05mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
NDS336P

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

NOT SPECIFIED

COMMERCIAL

1

-

500mW Ta

-

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

200m Ω @ 1.3A, 4.5V

1V @ 250μA

360pF @ 10V

1.2A Ta

8.5nC @ 4.5V

-

2.7V 4.5V

±8V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

MATTE TIN

3

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

20V

TO-236AB

1.2A

0.2Ohm

20V

-

NDS351AN vs NDS336P
NDS351N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

10 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2008

e3

yes

Active

1 (Unlimited)

3

-

EAR99

-

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1.1A

-

-

1

-

500mW Ta

Single

ENHANCEMENT MODE

500mW

9 ns

N-Channel

SWITCHING

160m Ω @ 1.4A, 10V

2V @ 250μA

140pF @ 10V

1.1A Ta

3.5nC @ 5V

16ns

4.5V 10V

±20V

16 ns

26 ns

1.1A

-

20V

30V

-

-

-

-

-

-

ROHS3 Compliant

Contains Lead

-

Tin (Sn)

-

-

-

-

-

-

-

-

No

NDS351AN vs NDS351N
NDS332P

Fairchild/ON Semiconductor

-

-

-

-

-

SOT23-3

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

NDS351AN vs NDS332P