Fairchild/ON Semiconductor NDS332P
- Part Number:
- NDS332P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477973-NDS332P
- Description:
- MOSFET P-CH 20V 1A SSOT3
- Datasheet:
- NDS332P
Fairchild/ON Semiconductor NDS332P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS332P.
- Package / CaseSOT23-3
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
NDS332P Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet NDS332P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NDS332P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet NDS332P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NDS332P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NDS332P More Descriptions
P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -1A, 0.41Ω
Transistor MOSFET P Channel 20 Volt 1 Amp 3 Pin Supersot Tape and Reel
Transistor PNP Field Effect NDS332P FAIRCHILD RoHS Ampere=1 V=20 SOt23Halfin
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: -2.7V; Threshold Voltage Vgs: -600mV; Power Dissipati
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 410 / Gate-Source Voltage V = 8 / Fall Time ns = 45 / Rise Time ns = 45 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Transistor MOSFET P Channel 20 Volt 1 Amp 3 Pin Supersot Tape and Reel
Transistor PNP Field Effect NDS332P FAIRCHILD RoHS Ampere=1 V=20 SOt23Halfin
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: -2.7V; Threshold Voltage Vgs: -600mV; Power Dissipati
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 410 / Gate-Source Voltage V = 8 / Fall Time ns = 45 / Rise Time ns = 45 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
The three parts on the right have similar specifications to NDS332P.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypeNumber of PinsWeightTransistor Element MaterialOperating TemperaturePublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCLead FreeTerminal FinishAdditional FeatureRadiation HardeningView Compare
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NDS332PSOT23-3Tape & Reel (TR)RoHS Compliant-------------------------------------------------------------
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TO-236-3, SC-59, SOT-23-3Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 3 days ago)10 WeeksTinSurface MountSurface Mount330mgSILICON-55°C~150°C TJ1998e3yesActive1 (Unlimited)3SMD/SMTEAR9985mOhmFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED1.7ANOT SPECIFIEDNot Qualified11500mW TaSingleENHANCEMENT MODE500mW10 nsN-ChannelSWITCHING85m Ω @ 1.9A, 10V2V @ 250μA195pF @ 15V1.7A Ta5nC @ 5V32ns4.5V 10V±20V32 ns13 ns1.7A20V30V30V150°C1.6 V1.22mm2.92mm3.05mmNo SVHCLead Free---
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TO-236-3, SC-59, SOT-23-3Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 3 days ago)10 Weeks-Surface MountSurface Mount330mgSILICON-55°C~150°C TJ2008e3yesActive1 (Unlimited)3-EAR99-FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING-1.1A--1-500mW TaSingleENHANCEMENT MODE500mW9 nsN-ChannelSWITCHING160m Ω @ 1.4A, 10V2V @ 250μA140pF @ 10V1.1A Ta3.5nC @ 5V16ns4.5V 10V±20V16 ns26 ns1.1A20V30V-------Contains LeadTin (Sn)LOGIC LEVEL COMPATIBLENo
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SOT23-3Tape & Reel (TR)RoHS Compliant------------------------------------------------------------
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