NDS332P

Fairchild/ON Semiconductor NDS332P

Part Number:
NDS332P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2477973-NDS332P
Description:
MOSFET P-CH 20V 1A SSOT3
ECAD Model:
Datasheet:
NDS332P

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Part Pictures
  • NDS332P Detail Images
  • NDS332P Detail Images
  • NDS332P Detail Images
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  • NDS332P Detail Images
  • NDS332P Detail Images
  • NDS332P Detail Images
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Specifications
Fairchild/ON Semiconductor NDS332P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS332P.
  • Package / Case
    SOT23-3
  • Packaging
    Tape & Reel (TR)
  • RoHS Status
    RoHS Compliant
Description
NDS332P Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet NDS332P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NDS332P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NDS332P More Descriptions
P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -1A, 0.41Ω
Transistor MOSFET P Channel 20 Volt 1 Amp 3 Pin Supersot Tape and Reel
Transistor PNP Field Effect NDS332P FAIRCHILD RoHS Ampere=1 V=20 SOt23Halfin
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: -2.7V; Threshold Voltage Vgs: -600mV; Power Dissipati
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 410 / Gate-Source Voltage V = 8 / Fall Time ns = 45 / Rise Time ns = 45 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
NDS332P Detail Images
Product Comparison
The three parts on the right have similar specifications to NDS332P.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    Terminal Finish
    Additional Feature
    Radiation Hardening
    View Compare
  • NDS332P
    NDS332P
    SOT23-3
    Tape & Reel (TR)
    RoHS Compliant
    -
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  • NDS355AN
    TO-236-3, SC-59, SOT-23-3
    Tape & Reel (TR)
    ROHS3 Compliant
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    3
    30mg
    SILICON
    -55°C~150°C TJ
    1998
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    85mOhm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    1.7A
    NOT SPECIFIED
    Not Qualified
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    10 ns
    N-Channel
    SWITCHING
    85m Ω @ 1.9A, 10V
    2V @ 250μA
    195pF @ 15V
    1.7A Ta
    5nC @ 5V
    32ns
    4.5V 10V
    ±20V
    32 ns
    13 ns
    1.7A
    20V
    30V
    30V
    150°C
    1.6 V
    1.22mm
    2.92mm
    3.05mm
    No SVHC
    Lead Free
    -
    -
    -
  • NDS351N
    TO-236-3, SC-59, SOT-23-3
    Tape & Reel (TR)
    ROHS3 Compliant
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    -
    Surface Mount
    Surface Mount
    3
    30mg
    SILICON
    -55°C~150°C TJ
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1.1A
    -
    -
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    9 ns
    N-Channel
    SWITCHING
    160m Ω @ 1.4A, 10V
    2V @ 250μA
    140pF @ 10V
    1.1A Ta
    3.5nC @ 5V
    16ns
    4.5V 10V
    ±20V
    16 ns
    26 ns
    1.1A
    20V
    30V
    -
    -
    -
    -
    -
    -
    -
    Contains Lead
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    No
  • NDS352AP
    SOT23-3
    Tape & Reel (TR)
    RoHS Compliant
    -
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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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