Fairchild/ON Semiconductor NDS336P

Name: NDS336P
Brand: Fairchild/ON Semiconductor
SKU: 2488623-NDS336P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS336P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2488623-NDS336P

Description:: MOSFET P-CH 20V 1.2A SSOT3

ECAD Model:

Datasheet:: NDS336P

Part Pictures

Specifications

Fairchild/ON Semiconductor NDS336P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS336P.

Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
500mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
200m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
360pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.2A Ta
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±8V
JEDEC-95 Code
TO-236AB
Drain Current-Max (Abs) (ID)
1.2A
Drain-source On Resistance-Max
0.2Ohm
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

NDS336P Overview
The maximum input capacitance of this device is 360pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 1.2A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.7V 4.5V), this device helps reduce its power consumption.

NDS336P Features
a 20V drain to source voltage (Vdss)

NDS336P Applications
There are a lot of Rochester Electronics, LLC
NDS336P applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

NDS336P More Descriptions

Trans MOSFET P-CH 20V 1.2A 3-Pin SuperSOT T/R
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -2.7V; Threshold Voltage Vgs: -780mV; Power Dissip
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Package/Case:3-SuperSOT; Drain-Source Breakdown Voltage:-20V; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Current Rating:-1.2A ;RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to NDS336P.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

Published

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Current Rating

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Lead Free

Radiation Hardening

View Compare
NDS336P

Fairchild/ON Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

3

R-PDSO-G3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

500mW Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

200m Ω @ 1.3A, 4.5V

1V @ 250μA

360pF @ 10V

1.2A Ta

8.5nC @ 4.5V

20V

2.7V 4.5V

±8V

TO-236AB

1.2A

0.2Ohm

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NDS355AN

Fairchild/ON Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

-

Not Qualified

1

-

500mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

85m Ω @ 1.9A, 10V

2V @ 250μA

195pF @ 15V

1.7A Ta

5nC @ 5V

-

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

10 Weeks

Tin

Surface Mount

3

30mg

1998

SMD/SMT

EAR99

85mOhm

FET General Purpose Power

30V

1.7A

1

Single

500mW

10 ns

32ns

32 ns

13 ns

1.7A

20V

30V

30V

150°C

1.6 V

1.22mm

2.92mm

3.05mm

No SVHC

Lead Free

-

NDS336P vs NDS355AN
NDS351N

Fairchild/ON Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

1

-

500mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

160m Ω @ 1.4A, 10V

2V @ 250μA

140pF @ 10V

1.1A Ta

3.5nC @ 5V

-

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

10 Weeks

-

Surface Mount

3

30mg

2008

-

EAR99

-

FET General Purpose Power

30V

1.1A

-

Single

500mW

9 ns

16ns

16 ns

26 ns

1.1A

20V

30V

-

-

-

-

-

-

-

Contains Lead

No

NDS336P vs NDS351N
NDS332P

Fairchild/ON Semiconductor

-

SOT23-3

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NDS336P vs NDS332P