ON Semiconductor MMBTA56LT3G
- Part Number:
- MMBTA56LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068898-MMBTA56LT3G
- Description:
- TRANS PNP 80V 0.5A SOT-23
- Datasheet:
- MMBTA56LT3G
ON Semiconductor MMBTA56LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA56LT3G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA56
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Power - Max225mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA56LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA56LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA56LT3G Applications
There are a lot of ON Semiconductor
MMBTA56LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA56LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA56LT3G Applications
There are a lot of ON Semiconductor
MMBTA56LT3G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA56LT3G More Descriptions
MMBT Series 80 V 500 mA Surface Mount PNP Silicon Driver Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
ON Semi MMBTA56LT3G PNP Bipolar Transistor, 0.5 A, 80 V, 3-Pin SOT-23 | ON Semiconductor MMBTA56LT3G
Transistor GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt
Trans GP BJT PNP 80V 0.5A Automotive 3-Pin SOT-23 T/R
80V 225mW 500mA 100@10mA1V 50MHz PNP 250mV@100mA10mA -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -80V, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power
Bipolar Transistor, Pnp -80V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBTA56LT3G.
TRANS, BIPOL, PNP, -80V, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 225mW; DC Collector Current: -500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
ON Semi MMBTA56LT3G PNP Bipolar Transistor, 0.5 A, 80 V, 3-Pin SOT-23 | ON Semiconductor MMBTA56LT3G
Transistor GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt
Trans GP BJT PNP 80V 0.5A Automotive 3-Pin SOT-23 T/R
80V 225mW 500mA 100@10mA1V 50MHz PNP 250mV@100mA10mA -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -80V, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power
Bipolar Transistor, Pnp -80V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBTA56LT3G.
TRANS, BIPOL, PNP, -80V, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 225mW; DC Collector Current: -500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MMBTA56LT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesReach Compliance CodeQualification StatusPolarity/Channel TypeContinuous Collector CurrentTerminal FinishTerminationCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Turn On Time-Max (ton)View Compare
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MMBTA56LT3GACTIVE (Last Updated: 2 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Other Transistors-80V225mWDUALGULL WING260-500mA50MHz40MMBTA5631Single300mW225mWAMPLIFIER50MHzPNP80V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V50MHz-250mV80V80V4V1001.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------------
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---Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING235200mA300MHz10MMBT412431Single300mW-SWITCHING300MHzNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V30V5V1201mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadSurface Mount7.994566mgAutomotive, AEC-Q101not_compliantNot QualifiedNPN200mA-----
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-15 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mW-SWITCHING250MHzPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V1201mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount7.994566mgAutomotive, AEC-Q101--PNP-200mAMatte Tin (Sn)----
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-15 Weeks-Surface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW--200MHzPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V60V-60V-5V100900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface Mount2.012816mgAutomotive, AEC-Q101--PNP-600mAMatte Tin (Sn) - annealedSMD/SMT600mA150°C45ns
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