MMBTA56LT3G

ON Semiconductor MMBTA56LT3G

Part Number:
MMBTA56LT3G
Manufacturer:
ON Semiconductor
Ventron No:
3068898-MMBTA56LT3G
Description:
TRANS PNP 80V 0.5A SOT-23
ECAD Model:
Datasheet:
MMBTA56LT3G

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Specifications
ON Semiconductor MMBTA56LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA56LT3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -80V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -500mA
  • Frequency
    50MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBTA56
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Power - Max
    225mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    -250mV
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    4V
  • hFE Min
    100
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBTA56LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MMBTA56LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz


MMBTA56LT3G Applications
There are a lot of ON Semiconductor
MMBTA56LT3G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA56LT3G More Descriptions
MMBT Series 80 V 500 mA Surface Mount PNP Silicon Driver Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
ON Semi MMBTA56LT3G PNP Bipolar Transistor, 0.5 A, 80 V, 3-Pin SOT-23 | ON Semiconductor MMBTA56LT3G
Transistor GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt
Trans GP BJT PNP 80V 0.5A Automotive 3-Pin SOT-23 T/R
80V 225mW 500mA 100@10mA1V 50MHz PNP 250mV@100mA10mA -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -80V, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power
Bipolar Transistor, Pnp -80V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBTA56LT3G.
TRANS, BIPOL, PNP, -80V, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 225mW; DC Collector Current: -500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to MMBTA56LT3G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Weight
    Series
    Reach Compliance Code
    Qualification Status
    Polarity/Channel Type
    Continuous Collector Current
    Terminal Finish
    Termination
    Current - Collector (Ic) (Max)
    Max Junction Temperature (Tj)
    Turn On Time-Max (ton)
    View Compare
  • MMBTA56LT3G
    MMBTA56LT3G
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -80V
    225mW
    DUAL
    GULL WING
    260
    -500mA
    50MHz
    40
    MMBTA56
    3
    1
    Single
    300mW
    225mW
    AMPLIFIER
    50MHz
    PNP
    80V
    500mA
    100 @ 100mA 1V
    100nA
    250mV @ 10mA, 100mA
    80V
    50MHz
    -250mV
    80V
    80V
    4V
    100
    1.01mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT4124-7
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    25V
    300mW
    DUAL
    GULL WING
    235
    200mA
    300MHz
    10
    MMBT4124
    3
    1
    Single
    300mW
    -
    SWITCHING
    300MHz
    NPN
    25V
    200mA
    120 @ 2mA 1V
    50nA ICBO
    300mV @ 5mA, 50mA
    25V
    300MHz
    -
    25V
    30V
    5V
    120
    1mm
    3.05mm
    1.4mm
    No SVHC
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    7.994566mg
    Automotive, AEC-Q101
    not_compliant
    Not Qualified
    NPN
    200mA
    -
    -
    -
    -
    -
  • MMBT4126-7-F
    -
    15 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -25V
    300mW
    DUAL
    GULL WING
    260
    -200mA
    250MHz
    40
    MMBT4126
    3
    1
    Single
    300mW
    -
    SWITCHING
    250MHz
    PNP
    25V
    200mA
    120 @ 2mA 1V
    50nA ICBO
    400mV @ 5mA, 50mA
    25V
    250MHz
    -400mV
    25V
    25V
    -4V
    120
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    7.994566mg
    Automotive, AEC-Q101
    -
    -
    PNP
    -200mA
    Matte Tin (Sn)
    -
    -
    -
    -
  • MMBT2907AT-7-F
    -
    15 Weeks
    -
    Surface Mount
    SOT-523
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -60V
    150mW
    DUAL
    GULL WING
    260
    -600mA
    200MHz
    30
    MMBT2907A
    3
    1
    Single
    150mW
    -
    -
    200MHz
    PNP
    -60V
    -600mA
    100 @ 150mA 10V
    10nA ICBO
    1.6V @ 50mA, 500mA
    -60V
    200MHz
    -1.6V
    60V
    -60V
    -5V
    100
    900μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    2.012816mg
    Automotive, AEC-Q101
    -
    -
    PNP
    -600mA
    Matte Tin (Sn) - annealed
    SMD/SMT
    600mA
    150°C
    45ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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