Comchip Technology MMBT2222A-G
- Part Number:
- MMBT2222A-G
- Manufacturer:
- Comchip Technology
- Ventron No:
- 3585337-MMBT2222A-G
- Description:
- TRANS NPN 40V 0.6A SOT-23
- Datasheet:
- MMBT2222A-G
Comchip Technology MMBT2222A-G technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology MMBT2222A-G.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10mV
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Frequency - Transition300MHz
- Turn Off Time-Max (toff)285ns
- Turn On Time-Max (ton)35ns
- RoHS StatusROHS3 Compliant
MMBT2222A-G Overview
This device has a DC current gain of 100 @ 150mA 10mV, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 300MHz.A maximum collector current of 600mA volts is possible.
MMBT2222A-G Features
the DC current gain for this device is 100 @ 150mA 10mV
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
MMBT2222A-G Applications
There are a lot of Comchip Technology
MMBT2222A-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10mV, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 300MHz.A maximum collector current of 600mA volts is possible.
MMBT2222A-G Features
the DC current gain for this device is 100 @ 150mA 10mV
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
MMBT2222A-G Applications
There are a lot of Comchip Technology
MMBT2222A-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2222A-G More Descriptions
Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R
RF Bipolar Transistors VCEO=40V IC=600mA
Contact for details
RF Bipolar Transistors VCEO=40V IC=600mA
Contact for details
The three parts on the right have similar specifications to MMBT2222A-G.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusNumber of PinsWeightSeriesECCN CodeVoltage - Rated DCReach Compliance CodeCurrent RatingFrequencyBase Part NumberPin CountQualification StatusElement ConfigurationPower DissipationGain Bandwidth ProductMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCLead FreeContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageRadiation HardeningPbfree CodeTerminationMax Junction Temperature (Tj)View Compare
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MMBT2222A-G10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON-55°C~150°C TJTape & Reel (TR)2011e3Active1 (Unlimited)3Tin (Sn)Other Transistors225mWDUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31SINGLE300mWSWITCHINGNPNNPN1V600mA100 @ 150mA 10mV10nA1V @ 50mA, 500mA40V300MHz300MHz285ns35nsROHS3 Compliant--------------------------------------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0Obsolete1 (Unlimited)3--300mWDUALGULL WING23510-1--SWITCHINGNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz---Non-RoHS Compliant37.994566mgAutomotive, AEC-Q101EAR9925Vnot_compliant200mA300MHzMMBT41243Not QualifiedSingle300mW300MHz25V30V5V120200mA1mm3.05mm1.4mmNo SVHCContains Lead-------------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--55°C~150°C TJTape & Reel (TR)2000-Active1 (Unlimited)---300mW-----1-300mW--NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300MHz--ROHS3 Compliant37.994566mgAutomotive, AEC-Q101-40V--300MHzMMBT3904--Single350mW300MHz40V60V6V100200mA1mm3.05mm1.4mmNo SVHCLead FreeTinSOT-23-3150°C-55°CNPN40V200mA300MHz300mVNo---
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15 WeeksSurface MountSurface MountSOT-523SILICON-55°C~150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)3Matte Tin (Sn) - annealedOther Transistors150mWDUALGULL WING26030-1---PNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz--45nsROHS3 Compliant32.012816mgAutomotive, AEC-Q101EAR99-60V--600mA200MHzMMBT2907A3-Single150mW200MHz60V-60V-5V100-600mA900μm1.6mm800μmNo SVHCLead Free------600mA--1.6VNoyesSMD/SMT150°C
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