Diodes Incorporated MMBT2907AT-7-F
- Part Number:
- MMBT2907AT-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068636-MMBT2907AT-7-F
- Description:
- TRANS PNP 60V 0.6A SOT523
- Datasheet:
- MMBT2907AT
Diodes Incorporated MMBT2907AT-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT2907AT-7-F.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-600mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMMBT2907A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-60V
- Max Collector Current-600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage-60V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-1.6V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current-600mA
- Turn On Time-Max (ton)45ns
- Height900μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2907AT-7-F Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -600mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is -600mA volts.
MMBT2907AT-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT2907AT-7-F Applications
There are a lot of Diodes Incorporated
MMBT2907AT-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -600mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is -600mA volts.
MMBT2907AT-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT2907AT-7-F Applications
There are a lot of Diodes Incorporated
MMBT2907AT-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2907AT-7-F More Descriptions
MMBT2907A Series PNP 60 V 150 mW Small Signal Transistor Surface Mount- SOT-523
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 60V 0.6A SOT523 | Diodes Inc MMBT2907AT-7-F
TRANSISTOR, PNP, SOT523; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:150mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-523; No. of Pins:3; Collector Emitter Voltage Vces:-1.6V; Current Ic Continuous a Max:-600mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; Package / Case:SOT-523; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:Small Signal
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 60V 0.6A SOT523 | Diodes Inc MMBT2907AT-7-F
TRANSISTOR, PNP, SOT523; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:150mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-523; No. of Pins:3; Collector Emitter Voltage Vces:-1.6V; Current Ic Continuous a Max:-600mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; Package / Case:SOT-523; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:Small Signal
The three parts on the right have similar specifications to MMBT2907AT-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Continuous Collector CurrentTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTurn Off Time-Max (toff)Reach Compliance CodeQualification StatusTransistor ApplicationView Compare
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MMBT2907AT-7-F15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3SMD/SMTEAR99Matte Tin (Sn) - annealedOther Transistors-60V150mWDUALGULL WING260-600mA200MHz30MMBT2907A31Single150mW200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V600mA200MHz-1.6V60V-60V-5V100150°C-600mA45ns900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free------
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15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3-EAR99-Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V-300MHz300mV40V60V6V100-200mA70ns750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeTin250ns---
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012005e0-Obsolete1 (Unlimited)3-EAR99--25V300mWDUALGULL WING235200mA300MHz10MMBT412431Single300mW300MHzNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V-300MHz-25V30V5V120-200mA-1mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains Lead--not_compliantNot QualifiedSWITCHING
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3-EAR99Matte Tin (Sn)Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mW250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V-250MHz-400mV25V25V-4V120--200mA-1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----SWITCHING
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