Diodes Incorporated MMBT3904T-7-F

MMBT3904T-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 300MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

MMBT3904T-7-F Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz


MMBT3904T-7-F Applications
There are a lot of Diodes Incorporated
MMBT3904T-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting