Diodes Incorporated MMBT3904-7-F
- Part Number:
- MMBT3904-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068645-MMBT3904-7-F
- Description:
- TRANS NPN 40V 0.2A SMD SOT23-3
- Datasheet:
- MMBT3904-7-F
Diodes Incorporated MMBT3904-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT3904-7-F.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- Weight7.994566mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2000
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC40V
- Max Power Dissipation300mW
- Frequency300MHz
- Base Part NumberMMBT3904
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation350mW
- Power - Max300mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)200mA
- Max Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage40V
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Continuous Collector Current200mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT3904-7-F Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 40V volts.Product comes in the supplier's device package SOT-23-3.There is a 40V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3904-7-F Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-23-3
MMBT3904-7-F Applications
There are a lot of Diodes Incorporated
MMBT3904-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 40V volts.Product comes in the supplier's device package SOT-23-3.There is a 40V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3904-7-F Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-23-3
MMBT3904-7-F Applications
There are a lot of Diodes Incorporated
MMBT3904-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT3904-7-F More Descriptions
Transistor General Purpose BJT NPN 40 Volt 0.2A Automotive 3-Pin SOT-23
Single Bipolar Transistor, NPN, 40 V, 200 mA, 310 mW, SOT-23, 3 Pin, Surface Mount
MMBT3904 Series NPN 40 V 350 mW Small Signal Transistor Surface Mount- SOT-23-3
40V 300mW 100@10mA,1V 200mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
BIPOLAR TRANSISTOR NPN SOT-23 ROHS 3K
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Single Bipolar Transistor, NPN, 40 V, 200 mA, 310 mW, SOT-23, 3 Pin, Surface Mount
MMBT3904 Series NPN 40 V 350 mW Small Signal Transistor Surface Mount- SOT-23-3
40V 300mW 100@10mA,1V 200mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
BIPOLAR TRANSISTOR NPN SOT-23 ROHS 3K
Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW;
TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 300mW; DC Collector Current: 200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
The three parts on the right have similar specifications to MMBT3904-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountPolarity/Channel TypeTransition FrequencyTurn Off Time-Max (toff)Turn On Time-Max (ton)Terminal FinishTransistor ApplicationView Compare
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MMBT3904-7-F15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-37.994566mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000Active1 (Unlimited)150°C-55°C40V300mW300MHzMMBT39041NPNSingle350mW300mW300MHzNPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V40V200mA300MHz300mV40V300MHz60V6V100200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------------------
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15 WeeksTinSurface MountSurface MountSOT-5233-2.012816mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007Active1 (Unlimited)--40V150mW300MHzMMBT39041-Single150mW-300MHzNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V---300mV40V-60V6V100200mA750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSILICONe3yes3EAR99Other TransistorsDUALGULL WING260200mA403NPN300MHz250ns70ns--
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15 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-7.994566mg-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008Active1 (Unlimited)---25V300mW250MHzMMBT41261-Single300mW-250MHzPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V----400mV25V-25V-4V120-200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSILICONe3yes3EAR99Other TransistorsDUALGULL WING260-200mA403PNP250MHz--Matte Tin (Sn)SWITCHING
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----MMBT3904----350mW-NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA-40V200mA---300MHz-----------------------------
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