Diodes Incorporated MMBT4126-7-F
- Part Number:
- MMBT4126-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068831-MMBT4126-7-F
- Description:
- TRANS PNP 25V 0.2A SMD SOT23-3
- Datasheet:
- MMBT4126-7-F
Diodes Incorporated MMBT4126-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT4126-7-F.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-25V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-200mA
- Frequency250MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT4126
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage25V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage-400mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)25V
- Emitter Base Voltage (VEBO)-4V
- hFE Min120
- Continuous Collector Current-200mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT4126-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at -4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
MMBT4126-7-F Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT4126-7-F Applications
There are a lot of Diodes Incorporated
MMBT4126-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at -4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
MMBT4126-7-F Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT4126-7-F Applications
There are a lot of Diodes Incorporated
MMBT4126-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT4126-7-F More Descriptions
MMBT4126 Series 25 V 200 mA SMT PNP Small Signal Transistor - SOT-23-3
Trans GP BJT PNP 25V 0.2A 200mW 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR PNP SOT-23 ROHS 3K
Trans GP BJT PNP 25V 0.2A 200mW 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR PNP SOT-23 ROHS 3K
The three parts on the right have similar specifications to MMBT4126-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTurn Off Time-Max (toff)Turn On Time-Max (ton)Reach Compliance CodeQualification StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT4126-7-F15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mWSWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120-200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------
-
15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99-Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW-300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100200mA750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeTin250ns70ns-----------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012005e0-Obsolete1 (Unlimited)3EAR99--25V300mWDUALGULL WING235200mA300MHz10MMBT412431Single300mWSWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V30V5V120200mA1mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains Lead---not_compliantNot Qualified---------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mg--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000--Active1 (Unlimited)----40V300mW----300MHz-MMBT3904-1Single350mW-300MHz-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V60V6V100200mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeTin----SOT-23-3150°C-55°CNPN300mW40V200mA300MHz300MHz
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