Micro Commercial Co MMBT2222AT-TP
- Part Number:
- MMBT2222AT-TP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 3585155-MMBT2222AT-TP
- Description:
- TRANS NPN 40V 0.6A SOT-523
- ECAD Model:
-
- Datasheet:
- MMBT2222AT-TP
Micro Commercial Co MMBT2222AT-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MMBT2222AT-TP.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMBT2222A
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max150mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 10mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency300MHz
- Frequency - Transition300MHz
- Power Dissipation-Max (Abs)0.35W
- Turn Off Time-Max (toff)285ns
- Turn On Time-Max (ton)35ns
- RoHS StatusROHS3 Compliant
MMBT2222AT-TP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.A transition frequency of 300MHz is present in the part.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
MMBT2222AT-TP Features
the DC current gain for this device is 75 @ 10mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
MMBT2222AT-TP Applications
There are a lot of Micro Commercial Co
MMBT2222AT-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.A transition frequency of 300MHz is present in the part.A 40V maximal voltage - Collector Emitter Breakdown is present in the device.
MMBT2222AT-TP Features
the DC current gain for this device is 75 @ 10mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
MMBT2222AT-TP Applications
There are a lot of Micro Commercial Co
MMBT2222AT-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2222AT-TP More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-523 T/R
MMBT2222AT Series 40 V 600 mA 150 mW NPN General Purpose Amplifier - SOT-523
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-523 T/R
MMBT2222AT Series 40 V 600 mA 150 mW NPN General Purpose Amplifier - SOT-523
The three parts on the right have similar specifications to MMBT2222AT-TP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusMountNumber of PinsWeightSeriesVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCLead FreeCollector Emitter Saturation VoltageRadiation HardeningView Compare
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MMBT2222AT-TP12 WeeksSurface MountSOT-523YESSILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsDUALGULL WING26010MMBT2222A3R-PDSO-G3Not Qualified1SINGLE150mWAMPLIFIERNPNNPN75 @ 10mA 10V100nA1V @ 50mA, 500mA40V600mA300MHz300MHz0.35W285ns35nsROHS3 Compliant---------------------------- -
-Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99--DUALGULL WING23510MMBT41243-Not Qualified1--SWITCHINGNPNNPN120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA--300MHz----Non-RoHS CompliantSurface Mount37.994566mgAutomotive, AEC-Q10125V300mWnot_compliant200mA300MHzSingle300mW300MHz25V200mA25V25V30V5V120200mA1mm3.05mm1.4mmNo SVHCContains Lead--
-
15 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsDUALGULL WING26040MMBT41263--1--SWITCHINGPNPPNP120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA--250MHz----ROHS3 CompliantSurface Mount37.994566mgAutomotive, AEC-Q101-25V300mW--200mA250MHzSingle300mW250MHz25V200mA25V25V25V-4V120-200mA1mm3.05mm1.4mmNo SVHCLead Free-400mVNo
-
-Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------MMBT3904-----350mW--NPN100 @ 10mA 1V-300mV @ 5mA, 50mA40V200mA-300MHz-------------------------------
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