Fairchild/ON Semiconductor MMBT2222AT
- Part Number:
- MMBT2222AT
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2846946-MMBT2222AT
- Description:
- TRANS NPN 40V 0.6A SOT523F
- Datasheet:
- MMBT2222AT
Fairchild/ON Semiconductor MMBT2222AT technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT2222AT.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-89, SOT-490
- Number of Pins3
- Supplier Device PackageSOT-523F
- Weight30mg
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation250mW
- Frequency300MHz
- Base Part NumberMMBT2222
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation250mW
- Power - Max250mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 1V
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)600mA
- Max Frequency100MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min75
- Height780μm
- Length1.7mm
- Width980μm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2222AT Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, it can handle voltages as low as 40V volts.Single BJT transistor comes in a supplier device package of SOT-523F.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.The maximum collector current is 600mA volts.
MMBT2222AT Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F
MMBT2222AT Applications
There are a lot of ON Semiconductor
MMBT2222AT applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, it can handle voltages as low as 40V volts.Single BJT transistor comes in a supplier device package of SOT-523F.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.The maximum collector current is 600mA volts.
MMBT2222AT Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F
MMBT2222AT Applications
There are a lot of ON Semiconductor
MMBT2222AT applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2222AT More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
MMBT2222AT Series 40 V 600 mA NPN Epitaxial Silicon Transistor - SOT-523F
Transistor GP BJT NPN 300V 0.5A 3-Pin TO-126 Rail
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-523FL T/R
MMBT2222AT Series 40 V 600 mA NPN Epitaxial Silicon Transistor - SOT-523F
Transistor GP BJT NPN 300V 0.5A 3-Pin TO-126 Rail
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-523FL T/R
The three parts on the right have similar specifications to MMBT2222AT.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRoHS StatusLead FreeContact PlatingTransistor Element MaterialSeriesJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryVoltage - Rated DCTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountPolarity/Channel TypeTransition FrequencyContinuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)REACH SVHCRadiation HardeningTerminal FinishTransistor ApplicationCurrent - Collector Cutoff (Max)View Compare
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MMBT2222AT16 WeeksSurface MountSurface MountSC-89, SOT-4903SOT-523F30mg150°C TJTape & Reel (TR)2004Last Time Buy1 (Unlimited)150°C-55°C250mW300MHzMMBT22221NPNSingle250mW250mW300MHzNPN40V600mA100 @ 150mA 1V1V @ 50mA, 500mA40V40V600mA100MHz1V40V300MHz75V6V75780μm1.7mm980μmROHS3 CompliantLead Free--------------------------
-
15 WeeksSurface MountSurface MountSOT-5233-2.012816mg-55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)--150mW300MHzMMBT39041-Single150mW-300MHzNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V---300mV40V-60V6V100750μm1.6mm800μmROHS3 CompliantLead FreeTinSILICONAutomotive, AEC-Q101e3yes3EAR99Other Transistors40VDUALGULL WING260200mA403NPN300MHz200mA250ns70nsNo SVHCNo---
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-7.994566mg-55°C~150°C TJTape & Reel (TR)2008Active1 (Unlimited)--300mW250MHzMMBT41261-Single300mW-250MHzPNP25V200mA120 @ 2mA 1V400mV @ 5mA, 50mA25V----400mV25V-25V-4V1201mm3.05mm1.4mmROHS3 CompliantLead Free-SILICONAutomotive, AEC-Q101e3yes3EAR99Other Transistors-25VDUALGULL WING260-200mA403PNP250MHz-200mA--No SVHCNoMatte Tin (Sn)SWITCHING50nA ICBO
-
--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)----MMBT3904----350mW-NPN--100 @ 10mA 1V300mV @ 5mA, 50mA-40V200mA---300MHz---------------------------------
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