MMBT2222AT

Fairchild/ON Semiconductor MMBT2222AT

Part Number:
MMBT2222AT
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2846946-MMBT2222AT
Description:
TRANS NPN 40V 0.6A SOT523F
ECAD Model:
Datasheet:
MMBT2222AT

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Specifications
Fairchild/ON Semiconductor MMBT2222AT technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT2222AT.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-89, SOT-490
  • Number of Pins
    3
  • Supplier Device Package
    SOT-523F
  • Weight
    30mg
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    250mW
  • Frequency
    300MHz
  • Base Part Number
    MMBT2222
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    250mW
  • Power - Max
    250mW
  • Gain Bandwidth Product
    300MHz
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 1V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    40V
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Current - Collector (Ic) (Max)
    600mA
  • Max Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    1V
  • Max Breakdown Voltage
    40V
  • Frequency - Transition
    300MHz
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    75
  • Height
    780μm
  • Length
    1.7mm
  • Width
    980μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT2222AT Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, it can handle voltages as low as 40V volts.Single BJT transistor comes in a supplier device package of SOT-523F.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.The maximum collector current is 600mA volts.

MMBT2222AT Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-523F


MMBT2222AT Applications
There are a lot of ON Semiconductor
MMBT2222AT applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT2222AT More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
MMBT2222AT Series 40 V 600 mA NPN Epitaxial Silicon Transistor - SOT-523F
Transistor GP BJT NPN 300V 0.5A 3-Pin TO-126 Rail
Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-523FL T/R
Product Comparison
The three parts on the right have similar specifications to MMBT2222AT.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Frequency
    Base Part Number
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Power - Max
    Gain Bandwidth Product
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Max Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Contact Plating
    Transistor Element Material
    Series
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Polarity/Channel Type
    Transition Frequency
    Continuous Collector Current
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    REACH SVHC
    Radiation Hardening
    Terminal Finish
    Transistor Application
    Current - Collector Cutoff (Max)
    View Compare
  • MMBT2222AT
    MMBT2222AT
    16 Weeks
    Surface Mount
    Surface Mount
    SC-89, SOT-490
    3
    SOT-523F
    30mg
    150°C TJ
    Tape & Reel (TR)
    2004
    Last Time Buy
    1 (Unlimited)
    150°C
    -55°C
    250mW
    300MHz
    MMBT2222
    1
    NPN
    Single
    250mW
    250mW
    300MHz
    NPN
    40V
    600mA
    100 @ 150mA 1V
    1V @ 50mA, 500mA
    40V
    40V
    600mA
    100MHz
    1V
    40V
    300MHz
    75V
    6V
    75
    780μm
    1.7mm
    980μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT3904T-7-F
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    -
    2.012816mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    Active
    1 (Unlimited)
    -
    -
    150mW
    300MHz
    MMBT3904
    1
    -
    Single
    150mW
    -
    300MHz
    NPN
    40V
    200mA
    100 @ 10mA 1V
    300mV @ 5mA, 50mA
    40V
    -
    -
    -
    300mV
    40V
    -
    60V
    6V
    100
    750μm
    1.6mm
    800μm
    ROHS3 Compliant
    Lead Free
    Tin
    SILICON
    Automotive, AEC-Q101
    e3
    yes
    3
    EAR99
    Other Transistors
    40V
    DUAL
    GULL WING
    260
    200mA
    40
    3
    NPN
    300MHz
    200mA
    250ns
    70ns
    No SVHC
    No
    -
    -
    -
  • MMBT4126-7-F
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    7.994566mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    Active
    1 (Unlimited)
    -
    -
    300mW
    250MHz
    MMBT4126
    1
    -
    Single
    300mW
    -
    250MHz
    PNP
    25V
    200mA
    120 @ 2mA 1V
    400mV @ 5mA, 50mA
    25V
    -
    -
    -
    -400mV
    25V
    -
    25V
    -4V
    120
    1mm
    3.05mm
    1.4mm
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    Automotive, AEC-Q101
    e3
    yes
    3
    EAR99
    Other Transistors
    -25V
    DUAL
    GULL WING
    260
    -200mA
    40
    3
    PNP
    250MHz
    -200mA
    -
    -
    No SVHC
    No
    Matte Tin (Sn)
    SWITCHING
    50nA ICBO
  • MMBT3904_D87Z
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MMBT3904
    -
    -
    -
    -
    350mW
    -
    NPN
    -
    -
    100 @ 10mA 1V
    300mV @ 5mA, 50mA
    -
    40V
    200mA
    -
    -
    -
    300MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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